KR100316798B1 - 반도체장치의 커패시터 및 그의 제조방법 - Google Patents
반도체장치의 커패시터 및 그의 제조방법 Download PDFInfo
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- KR100316798B1 KR100316798B1 KR1019990008832A KR19990008832A KR100316798B1 KR 100316798 B1 KR100316798 B1 KR 100316798B1 KR 1019990008832 A KR1019990008832 A KR 1019990008832A KR 19990008832 A KR19990008832 A KR 19990008832A KR 100316798 B1 KR100316798 B1 KR 100316798B1
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- Prior art keywords
- layer
- lower electrode
- interlayer insulating
- plug
- insulating layer
- Prior art date
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- 239000003990 capacitor Substances 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims abstract description 22
- 239000010410 layer Substances 0.000 claims abstract description 163
- 230000004888 barrier function Effects 0.000 claims abstract description 64
- 239000011229 interlayer Substances 0.000 claims abstract description 48
- 239000012790 adhesive layer Substances 0.000 claims abstract description 41
- 239000004065 semiconductor Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000000151 deposition Methods 0.000 claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 claims abstract description 11
- 239000003989 dielectric material Substances 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims description 38
- 239000002184 metal Substances 0.000 claims description 38
- 229910052750 molybdenum Inorganic materials 0.000 claims description 12
- -1 MoSiN Inorganic materials 0.000 claims description 11
- 229910052741 iridium Inorganic materials 0.000 claims description 10
- 229910052697 platinum Inorganic materials 0.000 claims description 10
- 229910052707 ruthenium Inorganic materials 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- 229910019007 CoSiN Inorganic materials 0.000 claims description 7
- 229910020018 Nb Zr Inorganic materials 0.000 claims description 7
- 229910004200 TaSiN Inorganic materials 0.000 claims description 7
- 229910008482 TiSiN Inorganic materials 0.000 claims description 7
- 229910008807 WSiN Inorganic materials 0.000 claims description 7
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 claims description 7
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical group [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 7
- 229910019001 CoSi Inorganic materials 0.000 claims description 6
- 229910016006 MoSi Inorganic materials 0.000 claims description 6
- 229910008484 TiSi Inorganic materials 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 238000005121 nitriding Methods 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 3
- 239000007772 electrode material Substances 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052760 oxygen Inorganic materials 0.000 abstract description 11
- 239000001301 oxygen Substances 0.000 abstract description 11
- 239000012535 impurity Substances 0.000 description 22
- 230000003647 oxidation Effects 0.000 description 13
- 238000007254 oxidation reaction Methods 0.000 description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 229910021332 silicide Inorganic materials 0.000 description 11
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 11
- 229920005591 polysilicon Polymers 0.000 description 8
- 238000001020 plasma etching Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 208000003028 Stuttering Diseases 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (13)
- 반도체기판과,상기 반도체기판 상에 소정 부분을 노출시키는 접촉홀이 가지며 상기 접촉홀 주위가 돌출되어 측면을 갖도록 형성된 층간절연층과,상기 접촉홀을 채워 상기 반도체기판과 접촉되게 형성된 플러그와,상기 층간절연층의 상기 돌출된 부분 상에 상기 플러그와 접촉되게 형성된 접착층과,상기 접착층의 상부 표면 및 측면에 형성된 제 1 및 제 2 장벽층과,상기 제 1 장벽층 상에 형성된 제 1 하부전극과,상기 제 1 및 2 장벽층의 측면과 상기 층간절연층의 측면에 형성된 제 2 하부전극과,상기 제 1 및 제 2 하부전극 상에 형성된 유전층과,상기 유전층 상에 형성된 상부전극을 포함하는 반도체장치의 커패시터.
- 청구항 1에 있어서 상기 접착층이 TiSi2, TaSi2, MoSi2, WSi2또는 CoSi2으로 형성된 반도체장치의 커패시터.
- 청구항 1에 있어서 상기 제 1 및 제 2 장벽층은 상기 접착층의 표면이 질화되어 형성된 반도체장치의 커패시터.
- 청구항 1에 있어서 상기 제 1 및 제 2 하부 전극과 상부 전극이 Pt, Mo 또는 Au의 내산화성 금속으로 형성된 반도체장치의 커패시터.
- 청구항 1에 있어서 상기 제 1 및 제 2 하부 전극과 상부 전극이 Ir 또는 Ru의 산화물질이 도전성을 갖는 금속으로 형성된 반도체장치의 커패시터.
- 청구항 1에 있어서 상기 유전층이 산화탄탈늄(Ta2O5), PZT(Pb(Zr Ti)O3), PLZT((Pb La)(Zr Ti)O3), PNZT(Pb(Nb Zr Ti)O3), PMN(Pb(Mg Nb)O3) 또는 BST((Ba Sr)TiO3)의 고유전상수 물질로 형성된 반도체장치의 커패시터.
- 반도체기판 상에 층간절연층을 형성하고 패터닝하여 상기 반도체기판의 소정 부분을 노출시키는 접촉홀을 형성하는 공정과,상기 접촉홀 내에 플러그를 상기 반도체기판과 접촉되게 형성하는 공정과,상기 층간절연층 상에 상기 플러그와 접촉되는 접착층, 제 1 장벽층 및 제 1 하부전극을 순차적으로 형성하고 상기 플러그와 대응하는 부분만 남도록 패터닝하되 상기 층간절연층도 소정 두께 제거되어 측면을 갖도록 과도식각하는 공정과,상기 접착층의 패터닝된 측면을 질화시켜 제 2 장벽층을 형성하면서 상기 제 1 하부 전극의 모서리 부분을 시각시키고 이 식각된 제 1 하부 전극 물질을 상기 층간절연층의 측면과 상기 제 1 및 제 2 장벽층의 측면에 재증착하여 제 2 하부전극을 형성하는 공정과,상기 제 1 및 제 2 하부전극 상에 유전층 및 상부전극을 형성하는 공정을 구비하는 반도체장치의 커패시터 제조방법.
- 청구항 7에 있어서 상기 접착층을 TiSi2, TaSi2, MoSi2, WSi2또는 CoSi2으로 형성하는 반도체장치의 커패시터 제조방법.
- 청구항 7에 있어서 상기 제 1 및 제 2 장벽층을 TiSiN, TaSiN, MoSiN, WSiN 또는 CoSiN으로 형성하는 반도체장치의 커패시터 제조방법.
- 청구항 9에 있어서 상기 제 2 장벽층을 500∼1000W 정도의 고주파 전력(Radio Frequency Power)을 인가하여 발생되는 플라즈마 상태에서 질화하여 형성하는 반도체장치의 커패시터 제조방법.
- 청구항 7에 있어서 상기 제 1 하부전극을 Pt, Mo 또는 Au의 내산화성 금속이나, Ir 또는 Ru의 산화물질이 도전성을 갖는 금속을 스퍼터링 방법으로 증착하여 형성하는 반도체장치의 커패시터 제조방법.
- 청구항 7에 있어서 상기 제 1 하부 전극의 모서리를 상기 제 2 장벽층을 형성할 때 인가되는 고주파 전력에 의해 식각되도록 하는 반도체장치의 커패시터 제조방법.
- 청구항 7에 있어서 상기 유전층을 산화탄탈늄(Ta2O5), PZT(Pb(Zr Ti)O3), PLZT((PbLa)(Zr Ti)O3), PNZT(Pb(Nb Zr Ti)O3), PMN(Pb(Mg Nb)O3) 또는 BST((Ba Sr)TiO3)의 고유전 물질로 형성하는 반도체장치의 커패시터 제조방법.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019990008832A KR100316798B1 (ko) | 1999-03-16 | 1999-03-16 | 반도체장치의 커패시터 및 그의 제조방법 |
US09/527,024 US6437391B1 (en) | 1999-03-16 | 2000-03-16 | Capacitor for semiconductor devices |
US10/190,848 US6699751B2 (en) | 1999-03-16 | 2002-07-09 | Method of fabricating a capacitor for semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019990008832A KR100316798B1 (ko) | 1999-03-16 | 1999-03-16 | 반도체장치의 커패시터 및 그의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20000060496A KR20000060496A (ko) | 2000-10-16 |
KR100316798B1 true KR100316798B1 (ko) | 2001-12-22 |
Family
ID=19576721
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019990008832A KR100316798B1 (ko) | 1999-03-16 | 1999-03-16 | 반도체장치의 커패시터 및 그의 제조방법 |
Country Status (2)
Country | Link |
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US (2) | US6437391B1 (ko) |
KR (1) | KR100316798B1 (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6720096B1 (en) | 1999-11-17 | 2004-04-13 | Sanyo Electric Co., Ltd. | Dielectric element |
KR100403611B1 (ko) * | 2000-06-07 | 2003-11-01 | 삼성전자주식회사 | 금속-절연체-금속 구조의 커패시터 및 그 제조방법 |
JP2002151657A (ja) | 2000-11-08 | 2002-05-24 | Sanyo Electric Co Ltd | 誘電体素子およびその製造方法 |
JP2002231903A (ja) * | 2001-02-06 | 2002-08-16 | Sanyo Electric Co Ltd | 誘電体素子およびその製造方法 |
US8410535B2 (en) * | 2011-04-25 | 2013-04-02 | Nanya Technology Corporation | Capacitor and manufacturing method thereof |
CN104657707B (zh) * | 2015-01-30 | 2018-03-20 | 业成光电(深圳)有限公司 | 指纹识别装置及其制作方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09172149A (ja) * | 1995-12-18 | 1997-06-30 | Nec Corp | 半導体装置及びその製造方法 |
KR19980043405A (ko) * | 1996-12-03 | 1998-09-05 | 문정환 | 반도체 소자의 커패시터 및 그의 제조방법 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08316430A (ja) * | 1995-05-15 | 1996-11-29 | Mitsubishi Electric Corp | 半導体メモリとその製造方法、スタックドキャパシタ |
US5825609A (en) * | 1996-04-23 | 1998-10-20 | International Business Machines Corporation | Compound electrode stack capacitor |
US6156619A (en) * | 1998-06-29 | 2000-12-05 | Oki Electric Industry Co., Ltd. | Semiconductor device and method of fabricating |
KR100292692B1 (ko) * | 1998-09-10 | 2001-07-12 | 김영환 | 반도체장치의커패시터제조방법 |
-
1999
- 1999-03-16 KR KR1019990008832A patent/KR100316798B1/ko not_active IP Right Cessation
-
2000
- 2000-03-16 US US09/527,024 patent/US6437391B1/en not_active Expired - Lifetime
-
2002
- 2002-07-09 US US10/190,848 patent/US6699751B2/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09172149A (ja) * | 1995-12-18 | 1997-06-30 | Nec Corp | 半導体装置及びその製造方法 |
KR19980043405A (ko) * | 1996-12-03 | 1998-09-05 | 문정환 | 반도체 소자의 커패시터 및 그의 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
US6437391B1 (en) | 2002-08-20 |
US20020175363A1 (en) | 2002-11-28 |
US6699751B2 (en) | 2004-03-02 |
KR20000060496A (ko) | 2000-10-16 |
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