KR100315265B1 - 반도체메모리장치 - Google Patents

반도체메모리장치 Download PDF

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Publication number
KR100315265B1
KR100315265B1 KR1019940033681A KR19940033681A KR100315265B1 KR 100315265 B1 KR100315265 B1 KR 100315265B1 KR 1019940033681 A KR1019940033681 A KR 1019940033681A KR 19940033681 A KR19940033681 A KR 19940033681A KR 100315265 B1 KR100315265 B1 KR 100315265B1
Authority
KR
South Korea
Prior art keywords
memory
spare
word line
normal
memory array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019940033681A
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English (en)
Korean (ko)
Other versions
KR950020756A (ko
Inventor
사사끼도시오
다나까도시히로
노조에아쯔시
구메히또시
Original Assignee
가나이 쓰도무
가부시끼가이샤 히다치 세이사꾸쇼
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Publication date
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Publication of KR950020756A publication Critical patent/KR950020756A/ko
Application granted granted Critical
Publication of KR100315265B1 publication Critical patent/KR100315265B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/76—Masking faults in memories by using spares or by reconfiguring using address translation or modifications
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/804—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout to prevent clustered faults
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/806—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout by reducing size of decoders

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
KR1019940033681A 1993-12-22 1994-12-12 반도체메모리장치 Expired - Fee Related KR100315265B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP93-324826 1993-12-22
JP32482693A JP3351595B2 (ja) 1993-12-22 1993-12-22 半導体メモリ装置

Publications (2)

Publication Number Publication Date
KR950020756A KR950020756A (ko) 1995-07-24
KR100315265B1 true KR100315265B1 (ko) 2002-02-19

Family

ID=18170116

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940033681A Expired - Fee Related KR100315265B1 (ko) 1993-12-22 1994-12-12 반도체메모리장치

Country Status (7)

Country Link
US (1) US5581508A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0660237B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JP3351595B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR100315265B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CN (1) CN1045133C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE69428418T2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TW272290B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

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US5805512A (en) * 1995-02-09 1998-09-08 Kabushiki Kaisha Toshiba Semiconductor memory device
JP3102302B2 (ja) * 1995-06-07 2000-10-23 日本電気株式会社 半導体記憶装置
US5764587A (en) * 1995-06-07 1998-06-09 International Business Machines Corporation Static wordline redundancy memory device
JPH0955482A (ja) 1995-06-08 1997-02-25 Mitsubishi Electric Corp 半導体記憶装置
JP3710002B2 (ja) * 1995-08-23 2005-10-26 株式会社日立製作所 半導体記憶装置
US5848006A (en) * 1995-12-06 1998-12-08 Nec Corporation Redundant semiconductor memory device using a single now address decoder for driving both sub-wordlines and redundant sub-wordlines
US6191999B1 (en) * 1997-06-20 2001-02-20 Fujitsu Limited Semiconductor memory device with reduced power consumption
US5881003A (en) * 1997-07-16 1999-03-09 International Business Machines Corporation Method of making a memory device fault tolerant using a variable domain redundancy replacement configuration
US5978931A (en) * 1997-07-16 1999-11-02 International Business Machines Corporation Variable domain redundancy replacement configuration for a memory device
US5970000A (en) * 1998-02-02 1999-10-19 International Business Machines Corporation Repairable semiconductor integrated circuit memory by selective assignment of groups of redundancy elements to domains
JP2000100195A (ja) * 1998-09-22 2000-04-07 Nec Corp 冗長回路を有する半導体記憶装置
KR100361862B1 (ko) * 1998-12-30 2003-02-20 주식회사 하이닉스반도체 반도체 메모리장치 및 이의 센싱전류 감소방법
KR100297193B1 (ko) 1999-04-27 2001-10-29 윤종용 리던던트 로우 대체 구조를 가지는 반도체 메모리 장치 및 그것의 로우 구동 방법
KR100364791B1 (ko) * 1999-09-15 2002-12-16 주식회사 하이닉스반도체 로우 리던던시 회로를 구비한 비휘발성 강유전체 메모리 장치 및 그의 페일 어드레스 구제방법
US6249464B1 (en) 1999-12-15 2001-06-19 Cypress Semiconductor Corp. Block redundancy in ultra low power memory circuits
JP3376998B2 (ja) * 2000-03-08 2003-02-17 日本電気株式会社 半導体記憶装置
JP2011054270A (ja) * 2000-03-24 2011-03-17 Renesas Electronics Corp 半導体記憶装置
JP3555859B2 (ja) * 2000-03-27 2004-08-18 広島日本電気株式会社 半導体生産システム及び半導体装置の生産方法
JP4707244B2 (ja) * 2000-03-30 2011-06-22 ルネサスエレクトロニクス株式会社 半導体記憶装置および半導体装置
FR2811464B1 (fr) * 2000-07-05 2005-03-25 St Microelectronics Sa Circuit memoire comportant des cellules de secours
JP5034149B2 (ja) * 2000-10-05 2012-09-26 富士通セミコンダクター株式会社 半導体メモリおよびその制御方法
US6584034B1 (en) * 2001-04-23 2003-06-24 Aplus Flash Technology Inc. Flash memory array structure suitable for multiple simultaneous operations
KR100414207B1 (ko) 2001-09-11 2004-01-13 삼성전자주식회사 반도체 메모리 장치
CN1322514C (zh) * 2002-04-28 2007-06-20 华邦电子股份有限公司 半导体存储器的改进结构
JP2004006479A (ja) * 2002-05-31 2004-01-08 Elpida Memory Inc 半導体記憶装置
WO2004075989A1 (en) * 2003-02-26 2004-09-10 Micro Therapeutics Inc. Fumed silica embolic compositions
US20050025707A1 (en) * 2003-02-27 2005-02-03 Patterson William R. Fumed silica embolic compositions
US6687157B1 (en) 2003-06-11 2004-02-03 Xilinx, Inc. Circuits and methods for identifying a defective memory cell via first, second and third wordline voltages
CN100349138C (zh) * 2003-08-08 2007-11-14 倚天资讯股份有限公司 非挥发性存储器存取系统及其循环使用存取空间方法
US7054219B1 (en) * 2005-03-31 2006-05-30 Matrix Semiconductor, Inc. Transistor layout configuration for tight-pitched memory array lines
JP4670458B2 (ja) * 2005-04-27 2011-04-13 株式会社日立製作所 半導体装置
US7401270B2 (en) * 2005-10-20 2008-07-15 Infineon Technologies Ag Repair of semiconductor memory device via external command
US8189396B2 (en) * 2006-12-14 2012-05-29 Mosaid Technologies Incorporated Word line driver in a hierarchical NOR flash memory
JP2010146665A (ja) * 2008-12-19 2010-07-01 Toshiba Corp 抵抗変化型不揮発性半導体メモリ
US20110041016A1 (en) * 2009-08-12 2011-02-17 Taiwan Semiconductor Manufacturing Company, Ltd. Memory errors and redundancy
US9442799B2 (en) 2014-06-26 2016-09-13 Microsoft Technology Licensing, Llc Extended lifetime memory
CN119360919A (zh) * 2023-07-11 2025-01-24 珠海横琴芯存半导体有限公司 一种存储装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58199496A (ja) * 1982-05-14 1983-11-19 Hitachi Ltd 欠陥救済回路を有する半導体メモリ
JP2629697B2 (ja) * 1987-03-27 1997-07-09 日本電気株式会社 半導体記憶装置
NL8900026A (nl) * 1989-01-06 1990-08-01 Philips Nv Matrixgeheugen, bevattende standaardblokken, standaardsubblokken, een redundant blok, en redundante subblokken, alsmede geintegreerde schakeling bevattende meerdere van zulke matrixgeheugens.
US5255228A (en) * 1989-01-10 1993-10-19 Matsushita Electronics Corporation Semiconductor memory device with redundancy circuits
JP2547633B2 (ja) * 1989-05-09 1996-10-23 三菱電機株式会社 半導体記憶装置
JP2837433B2 (ja) * 1989-06-05 1998-12-16 三菱電機株式会社 半導体記憶装置における不良ビット救済回路
KR920010347B1 (ko) * 1989-12-30 1992-11-27 삼성전자주식회사 분할된 워드라인을 가지는 메모리장치의 리던던시 구조
KR920009059B1 (ko) * 1989-12-29 1992-10-13 삼성전자 주식회사 반도체 메모리 장치의 병렬 테스트 방법
JP2863619B2 (ja) * 1990-10-03 1999-03-03 株式会社東芝 半導体メモリ
JPH05189996A (ja) * 1991-09-05 1993-07-30 Hitachi Ltd 半導体記憶装置
JP3040625B2 (ja) * 1992-02-07 2000-05-15 松下電器産業株式会社 半導体記憶装置

Also Published As

Publication number Publication date
EP0660237A3 (en) 1997-02-19
KR950020756A (ko) 1995-07-24
CN1112276A (zh) 1995-11-22
EP0660237A2 (en) 1995-06-28
JPH07182892A (ja) 1995-07-21
CN1045133C (zh) 1999-09-15
DE69428418T2 (de) 2002-06-06
EP0660237B1 (en) 2001-09-26
DE69428418D1 (de) 2001-10-31
TW272290B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1996-03-11
US5581508A (en) 1996-12-03
JP3351595B2 (ja) 2002-11-25

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