KR100313573B1 - 연마용 조성물 - Google Patents
연마용 조성물 Download PDFInfo
- Publication number
- KR100313573B1 KR100313573B1 KR1019990005562A KR19990005562A KR100313573B1 KR 100313573 B1 KR100313573 B1 KR 100313573B1 KR 1019990005562 A KR1019990005562 A KR 1019990005562A KR 19990005562 A KR19990005562 A KR 19990005562A KR 100313573 B1 KR100313573 B1 KR 100313573B1
- Authority
- KR
- South Korea
- Prior art keywords
- polishing
- polishing composition
- silica
- weight
- slurry
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 75
- 239000000203 mixture Substances 0.000 title claims abstract description 35
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- -1 cyclic amine Chemical class 0.000 claims abstract description 12
- 239000008367 deionised water Substances 0.000 claims abstract description 7
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910001111 Fine metal Inorganic materials 0.000 claims abstract description 4
- 239000000843 powder Substances 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 23
- 229910044991 metal oxide Inorganic materials 0.000 claims description 18
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical group O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 claims description 18
- 239000002245 particle Substances 0.000 claims description 12
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 claims description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 10
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 10
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 5
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 5
- JVQIKJMSUIMUDI-UHFFFAOYSA-N 3-pyrroline Chemical compound C1NCC=C1 JVQIKJMSUIMUDI-UHFFFAOYSA-N 0.000 claims description 3
- AHVYPIQETPWLSZ-UHFFFAOYSA-N N-methyl-pyrrolidine Natural products CN1CC=CC1 AHVYPIQETPWLSZ-UHFFFAOYSA-N 0.000 claims description 3
- JHHZLHWJQPUNKB-UHFFFAOYSA-N pyrrolidin-3-ol Chemical compound OC1CCNC1 JHHZLHWJQPUNKB-UHFFFAOYSA-N 0.000 claims description 3
- AVFZOVWCLRSYKC-UHFFFAOYSA-N 1-methylpyrrolidine Chemical compound CN1CCCC1 AVFZOVWCLRSYKC-UHFFFAOYSA-N 0.000 claims description 2
- HPDZYDTXCOFUOY-UHFFFAOYSA-N methyl 2-(2-oxopyrrolidin-1-yl)acetate Chemical compound COC(=O)CN1CCCC1=O HPDZYDTXCOFUOY-UHFFFAOYSA-N 0.000 claims description 2
- 239000002184 metal Substances 0.000 abstract description 7
- 238000005516 engineering process Methods 0.000 abstract description 4
- 239000011229 interlayer Substances 0.000 abstract description 3
- 230000008901 benefit Effects 0.000 abstract description 2
- 239000002002 slurry Substances 0.000 description 27
- 230000000052 comparative effect Effects 0.000 description 17
- 230000008569 process Effects 0.000 description 15
- 239000000654 additive Substances 0.000 description 11
- 235000012431 wafers Nutrition 0.000 description 11
- 239000010410 layer Substances 0.000 description 9
- 239000006185 dispersion Substances 0.000 description 8
- 230000000996 additive effect Effects 0.000 description 7
- 230000002776 aggregation Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 229910010413 TiO 2 Inorganic materials 0.000 description 4
- 229940042397 direct acting antivirals cyclic amines Drugs 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000004062 sedimentation Methods 0.000 description 4
- 238000004220 aggregation Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 239000007800 oxidant agent Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 229910002016 Aerosil® 200 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UOACKFBJUYNSLK-XRKIENNPSA-N Estradiol Cypionate Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H](C4=CC=C(O)C=C4CC3)CC[C@@]21C)C(=O)CCC1CCCC1 UOACKFBJUYNSLK-XRKIENNPSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000003906 humectant Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019990005562A KR100313573B1 (ko) | 1999-02-19 | 1999-02-19 | 연마용 조성물 |
| TW088111415A TW428019B (en) | 1999-02-19 | 1999-07-06 | Polishing composition |
| JP20684199A JP3418570B2 (ja) | 1999-02-19 | 1999-07-21 | 研磨用組成物 |
| CN99111114A CN1131288C (zh) | 1999-02-19 | 1999-07-23 | 抛光组合物 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019990005562A KR100313573B1 (ko) | 1999-02-19 | 1999-02-19 | 연마용 조성물 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20000006605A KR20000006605A (ko) | 2000-02-07 |
| KR100313573B1 true KR100313573B1 (ko) | 2001-11-07 |
Family
ID=19574603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019990005562A KR100313573B1 (ko) | 1999-02-19 | 1999-02-19 | 연마용 조성물 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP3418570B2 (ja) |
| KR (1) | KR100313573B1 (ja) |
| CN (1) | CN1131288C (ja) |
| TW (1) | TW428019B (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100367830B1 (ko) * | 2000-12-18 | 2003-01-10 | 제일모직주식회사 | Ｃｍｐ용 조성물 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI228538B (en) | 2000-10-23 | 2005-03-01 | Kao Corp | Polishing composition |
| US20150099361A1 (en) * | 2012-05-07 | 2015-04-09 | Basf Se | Process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (cmp) of iii-v material in the presence of a cmp composition comprising a compound containing an n-heterocycle |
| CN105940450B (zh) * | 2014-01-31 | 2019-07-02 | Hoya株式会社 | 磁盘用基板的制造方法和磁盘的制造方法 |
| CN105538076A (zh) * | 2016-02-05 | 2016-05-04 | 刘汝河 | 一种玻璃用抛光膏及玻璃抛光修复方法 |
| KR20220081840A (ko) | 2020-12-09 | 2022-06-16 | 박재경 | 수거포대용 입구 가이드 장치 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4138228A (en) * | 1977-02-02 | 1979-02-06 | Ralf Hoehn | Abrasive of a microporous polymer matrix with inorganic particles thereon |
| JPH07249600A (ja) * | 1994-03-14 | 1995-09-26 | Mitsubishi Materials Corp | ポリシリコン膜の研磨方法およびポリシリコン膜用研磨剤 |
| KR19980042755A (ko) * | 1996-11-26 | 1998-08-17 | 마르타 앤 피네간 | 금속의 화학 기계적 연마에 유용한 조성물 및 슬러리 |
| KR19980087261A (ko) * | 1997-05-22 | 1998-12-05 | 아사무라 다까시 | 연마지립, 연마제 및 연마 방법 |
| JPH1121546A (ja) * | 1996-12-09 | 1999-01-26 | Cabot Corp | 銅系基板に有用な化学的・機械的研磨用スラリー |
-
1999
- 1999-02-19 KR KR1019990005562A patent/KR100313573B1/ko not_active IP Right Cessation
- 1999-07-06 TW TW088111415A patent/TW428019B/zh not_active IP Right Cessation
- 1999-07-21 JP JP20684199A patent/JP3418570B2/ja not_active Expired - Lifetime
- 1999-07-23 CN CN99111114A patent/CN1131288C/zh not_active Expired - Lifetime
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4138228A (en) * | 1977-02-02 | 1979-02-06 | Ralf Hoehn | Abrasive of a microporous polymer matrix with inorganic particles thereon |
| JPH07249600A (ja) * | 1994-03-14 | 1995-09-26 | Mitsubishi Materials Corp | ポリシリコン膜の研磨方法およびポリシリコン膜用研磨剤 |
| KR19980042755A (ko) * | 1996-11-26 | 1998-08-17 | 마르타 앤 피네간 | 금속의 화학 기계적 연마에 유용한 조성물 및 슬러리 |
| JPH1121546A (ja) * | 1996-12-09 | 1999-01-26 | Cabot Corp | 銅系基板に有用な化学的・機械的研磨用スラリー |
| KR19980087261A (ko) * | 1997-05-22 | 1998-12-05 | 아사무라 다까시 | 연마지립, 연마제 및 연마 방법 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100367830B1 (ko) * | 2000-12-18 | 2003-01-10 | 제일모직주식회사 | Ｃｍｐ용 조성물 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2000239653A (ja) | 2000-09-05 |
| CN1263923A (zh) | 2000-08-23 |
| KR20000006605A (ko) | 2000-02-07 |
| TW428019B (en) | 2001-04-01 |
| JP3418570B2 (ja) | 2003-06-23 |
| CN1131288C (zh) | 2003-12-17 |
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