TW428019B - Polishing composition - Google Patents
Polishing compositionInfo
- Publication number
- TW428019B TW428019B TW088111415A TW88111415A TW428019B TW 428019 B TW428019 B TW 428019B TW 088111415 A TW088111415 A TW 088111415A TW 88111415 A TW88111415 A TW 88111415A TW 428019 B TW428019 B TW 428019B
- Authority
- TW
- Taiwan
- Prior art keywords
- polishing composition
- polishing
- microscratches
- minimizing
- occurrence
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title abstract 5
- 239000000203 mixture Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 abstract 2
- 239000010409 thin film Substances 0.000 abstract 2
- -1 cyclic amine Chemical class 0.000 abstract 1
- 239000008367 deionised water Substances 0.000 abstract 1
- 229910021641 deionized water Inorganic materials 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019990005562A KR100313573B1 (ko) | 1999-02-19 | 1999-02-19 | 연마용 조성물 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW428019B true TW428019B (en) | 2001-04-01 |
Family
ID=19574603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW088111415A TW428019B (en) | 1999-02-19 | 1999-07-06 | Polishing composition |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP3418570B2 (ja) |
| KR (1) | KR100313573B1 (ja) |
| CN (1) | CN1131288C (ja) |
| TW (1) | TW428019B (ja) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI228538B (en) | 2000-10-23 | 2005-03-01 | Kao Corp | Polishing composition |
| KR100367830B1 (ko) * | 2000-12-18 | 2003-01-10 | 제일모직주식회사 | Ｃｍｐ용 조성물 |
| US20150099361A1 (en) * | 2012-05-07 | 2015-04-09 | Basf Se | Process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (cmp) of iii-v material in the presence of a cmp composition comprising a compound containing an n-heterocycle |
| CN105940450B (zh) * | 2014-01-31 | 2019-07-02 | Hoya株式会社 | 磁盘用基板的制造方法和磁盘的制造方法 |
| CN105538076A (zh) * | 2016-02-05 | 2016-05-04 | 刘汝河 | 一种玻璃用抛光膏及玻璃抛光修复方法 |
| KR20220081840A (ko) | 2020-12-09 | 2022-06-16 | 박재경 | 수거포대용 입구 가이드 장치 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4138228A (en) * | 1977-02-02 | 1979-02-06 | Ralf Hoehn | Abrasive of a microporous polymer matrix with inorganic particles thereon |
| JP2889810B2 (ja) * | 1994-03-14 | 1999-05-10 | 三菱マテリアル株式会社 | ポリシリコン膜の研磨方法およびポリシリコン膜用研磨剤 |
| US6068787A (en) * | 1996-11-26 | 2000-05-30 | Cabot Corporation | Composition and slurry useful for metal CMP |
| US6309560B1 (en) * | 1996-12-09 | 2001-10-30 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
| US6022400A (en) * | 1997-05-22 | 2000-02-08 | Nippon Steel Corporation | Polishing abrasive grains, polishing agent and polishing method |
-
1999
- 1999-02-19 KR KR1019990005562A patent/KR100313573B1/ko not_active IP Right Cessation
- 1999-07-06 TW TW088111415A patent/TW428019B/zh not_active IP Right Cessation
- 1999-07-21 JP JP20684199A patent/JP3418570B2/ja not_active Expired - Lifetime
- 1999-07-23 CN CN99111114A patent/CN1131288C/zh not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2000239653A (ja) | 2000-09-05 |
| CN1263923A (zh) | 2000-08-23 |
| KR20000006605A (ko) | 2000-02-07 |
| KR100313573B1 (ko) | 2001-11-07 |
| JP3418570B2 (ja) | 2003-06-23 |
| CN1131288C (zh) | 2003-12-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MK4A | Expiration of patent term of an invention patent |