TW428019B - Polishing composition - Google Patents

Polishing composition

Info

Publication number
TW428019B
TW428019B TW088111415A TW88111415A TW428019B TW 428019 B TW428019 B TW 428019B TW 088111415 A TW088111415 A TW 088111415A TW 88111415 A TW88111415 A TW 88111415A TW 428019 B TW428019 B TW 428019B
Authority
TW
Taiwan
Prior art keywords
polishing composition
polishing
microscratches
minimizing
occurrence
Prior art date
Application number
TW088111415A
Other languages
Chinese (zh)
Inventor
Kil-Sung Lee
Jae-Seok Lee
Seok-Jin Kim
Ki-Young Lee
Tu-Won Chang
Original Assignee
Cheil Ind Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cheil Ind Inc filed Critical Cheil Ind Inc
Application granted granted Critical
Publication of TW428019B publication Critical patent/TW428019B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The present invention relates to a polishing composition comprising 30 to 99 wt% of deionized water, 0.1 to 50 wt% of powder of metallic oxide and 0.01 to 20 wt% of cyclic amine. This polishing composition can be used in a chemical mechanical polishing of thin films in integrated circuit manufacturing and has an effect of minimizing the occurrence of microscratches on the thin film after polishing. Thereby it can be applied to the manufacturing process of highly integrated circuits such as Shallow Trench Isolation.
TW088111415A 1999-02-19 1999-07-06 Polishing composition TW428019B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019990005562A KR100313573B1 (en) 1999-02-19 1999-02-19 Composition for cmp polishing

Publications (1)

Publication Number Publication Date
TW428019B true TW428019B (en) 2001-04-01

Family

ID=19574603

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088111415A TW428019B (en) 1999-02-19 1999-07-06 Polishing composition

Country Status (4)

Country Link
JP (1) JP3418570B2 (en)
KR (1) KR100313573B1 (en)
CN (1) CN1131288C (en)
TW (1) TW428019B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI228538B (en) 2000-10-23 2005-03-01 Kao Corp Polishing composition
KR100367830B1 (en) * 2000-12-18 2003-01-10 제일모직주식회사 Composition for chemical mechanical polishing
SG11201407168PA (en) * 2012-05-07 2014-11-27 Basf Se Process for manufacture of semiconductor devices
JP6420260B2 (en) * 2014-01-31 2018-11-07 Hoya株式会社 Magnetic disk substrate manufacturing method and magnetic disk manufacturing method
CN105538076A (en) * 2016-02-05 2016-05-04 刘汝河 Polishing paste for glass and glass polishing repair method
KR20220081840A (en) 2020-12-09 2022-06-16 박재경 Entrance guide device for waste sack

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4138228A (en) * 1977-02-02 1979-02-06 Ralf Hoehn Abrasive of a microporous polymer matrix with inorganic particles thereon
JP2889810B2 (en) * 1994-03-14 1999-05-10 三菱マテリアル株式会社 Polishing method for polysilicon film and polishing agent for polysilicon film
US6068787A (en) * 1996-11-26 2000-05-30 Cabot Corporation Composition and slurry useful for metal CMP
US6309560B1 (en) * 1996-12-09 2001-10-30 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US6022400A (en) * 1997-05-22 2000-02-08 Nippon Steel Corporation Polishing abrasive grains, polishing agent and polishing method

Also Published As

Publication number Publication date
CN1131288C (en) 2003-12-17
JP2000239653A (en) 2000-09-05
JP3418570B2 (en) 2003-06-23
KR100313573B1 (en) 2001-11-07
KR20000006605A (en) 2000-02-07
CN1263923A (en) 2000-08-23

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Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MK4A Expiration of patent term of an invention patent