KR100303386B1 - 터널효과센서의제조방법 - Google Patents

터널효과센서의제조방법 Download PDF

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Publication number
KR100303386B1
KR100303386B1 KR1019940007061A KR19940007061A KR100303386B1 KR 100303386 B1 KR100303386 B1 KR 100303386B1 KR 1019940007061 A KR1019940007061 A KR 1019940007061A KR 19940007061 A KR19940007061 A KR 19940007061A KR 100303386 B1 KR100303386 B1 KR 100303386B1
Authority
KR
South Korea
Prior art keywords
oxide layer
mask
substrate
layer
tunnel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019940007061A
Other languages
English (en)
Korean (ko)
Inventor
에머리히 베르타크놀리
마르쿠스 바블
Original Assignee
칼 하인쯔 호르닝어
지멘스 악티엔게젤샤프트
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 칼 하인쯔 호르닝어, 지멘스 악티엔게젤샤프트 filed Critical 칼 하인쯔 호르닝어
Application granted granted Critical
Publication of KR100303386B1 publication Critical patent/KR100303386B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0894—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by non-contact electron transfer, i.e. electron tunneling
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/978—Semiconductor device manufacturing: process forming tapered edges on substrate or adjacent layers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Pressure Sensors (AREA)
KR1019940007061A 1993-04-05 1994-04-04 터널효과센서의제조방법 Expired - Fee Related KR100303386B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEP4311121.1 1993-04-05
DE4311121 1993-04-05

Publications (1)

Publication Number Publication Date
KR100303386B1 true KR100303386B1 (ko) 2001-11-30

Family

ID=6484761

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940007061A Expired - Fee Related KR100303386B1 (ko) 1993-04-05 1994-04-04 터널효과센서의제조방법

Country Status (6)

Country Link
US (1) US5472916A (enExample)
EP (1) EP0619495B1 (enExample)
JP (1) JP3614460B2 (enExample)
KR (1) KR100303386B1 (enExample)
DE (1) DE59402800D1 (enExample)
TW (1) TW281776B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09507575A (ja) * 1994-01-18 1997-07-29 シーメンス アクチエンゲゼルシヤフト トンネル効果−センサ
US5596194A (en) * 1994-08-19 1997-01-21 Hughes Aircraft Company Single-wafer tunneling sensor and low-cost IC manufacturing method
US5578843A (en) * 1994-10-06 1996-11-26 Kavlico Corporation Semiconductor sensor with a fusion bonded flexible structure
US5966617A (en) * 1996-09-20 1999-10-12 Kavlico Corporation Multiple local oxidation for surface micromachining
TW317651B (en) * 1996-12-19 1997-10-11 Mos Electronics Taiwan Inc Method of preventing wafer edge region from generating peeling phenomena
DE19915156A1 (de) * 1999-03-27 2000-09-28 Inst Halbleiterphysik Gmbh Verfahren zur Herstellung dünner gleichförmiger Oxidschichten auf Silizium-Oberflächen
US6563184B1 (en) 2000-08-01 2003-05-13 Hrl Laboratories, Llc Single crystal tunneling sensor or switch with silicon beam structure and a method of making same
US6674141B1 (en) 2000-08-01 2004-01-06 Hrl Laboratories, Llc Single crystal, tunneling and capacitive, three-axes sensor using eutectic bonding and a method of making same
US6630367B1 (en) 2000-08-01 2003-10-07 Hrl Laboratories, Llc Single crystal dual wafer, tunneling sensor and a method of making same
US6580138B1 (en) * 2000-08-01 2003-06-17 Hrl Laboratories, Llc Single crystal, dual wafer, tunneling sensor or switch with silicon on insulator substrate and a method of making same
US6555404B1 (en) 2000-08-01 2003-04-29 Hrl Laboratories, Llc Method of manufacturing a dual wafer tunneling gyroscope
US6800912B2 (en) * 2001-05-18 2004-10-05 Corporation For National Research Initiatives Integrated electromechanical switch and tunable capacitor and method of making the same
US7118935B2 (en) * 2003-03-31 2006-10-10 Intel Corporation Bump style MEMS switch

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5249772A (en) * 1975-10-18 1977-04-21 Hitachi Ltd Process for production of semiconductor device
FR2554638A1 (fr) * 1983-11-04 1985-05-10 Efcis Procede de fabrication de structures integrees de silicium sur ilots isoles du substrat
NL8400297A (nl) * 1984-02-01 1985-09-02 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel.
US4638669A (en) * 1985-05-07 1987-01-27 Massachusetts Institute Of Technology Quantum tunneling cantilever accelerometer
FR2599833B1 (fr) * 1986-06-10 1992-02-14 Metravib Sa Capteur de grandeurs mecaniques integre sur silicium et procede de fabrication
US4874463A (en) * 1988-12-23 1989-10-17 At&T Bell Laboratories Integrated circuits from wafers having improved flatness
US4943343A (en) * 1989-08-14 1990-07-24 Zaher Bardai Self-aligned gate process for fabricating field emitter arrays
KR910013438A (ko) * 1989-12-18 1991-08-08 야마무라 가쯔미 필드 전자 방출 장치 및 그 생산 공정
US5266530A (en) * 1991-11-08 1993-11-30 Bell Communications Research, Inc. Self-aligned gated electron field emitter
US5358908A (en) * 1992-02-14 1994-10-25 Micron Technology, Inc. Method of creating sharp points and other features on the surface of a semiconductor substrate

Also Published As

Publication number Publication date
JP3614460B2 (ja) 2005-01-26
EP0619495B1 (de) 1997-05-21
DE59402800D1 (de) 1997-06-26
EP0619495A1 (de) 1994-10-12
TW281776B (enExample) 1996-07-21
US5472916A (en) 1995-12-05
JPH06350106A (ja) 1994-12-22

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