KR100297628B1 - 반도체소자제조방법 - Google Patents

반도체소자제조방법 Download PDF

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Publication number
KR100297628B1
KR100297628B1 KR1019980042154A KR19980042154A KR100297628B1 KR 100297628 B1 KR100297628 B1 KR 100297628B1 KR 1019980042154 A KR1019980042154 A KR 1019980042154A KR 19980042154 A KR19980042154 A KR 19980042154A KR 100297628 B1 KR100297628 B1 KR 100297628B1
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KR
South Korea
Prior art keywords
film
plasma
tantalum nitride
oxide film
gas
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Expired - Fee Related
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KR1019980042154A
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English (en)
Korean (ko)
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KR20000025179A (ko
Inventor
황철주
Original Assignee
황 철 주
주성엔지니어링(주)
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Priority to KR1019980042154A priority Critical patent/KR100297628B1/ko
Priority to TW088117494A priority patent/TW517331B/zh
Priority to JP28943099A priority patent/JP4473378B2/ja
Priority to US09/418,188 priority patent/US6180542B1/en
Publication of KR20000025179A publication Critical patent/KR20000025179A/ko
Application granted granted Critical
Publication of KR100297628B1 publication Critical patent/KR100297628B1/ko
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69393—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing tantalum, e.g. Ta2O5
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6504—In-situ cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6519—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being oxygen
    • H10P14/6522—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being oxygen introduced into a nitride material, e.g. changing SiN to SiON
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6524—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen
    • H10P14/6526—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen introduced into an oxide material, e.g. changing SiO to SiON
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Chemical Vapour Deposition (AREA)
KR1019980042154A 1998-10-09 1998-10-09 반도체소자제조방법 Expired - Fee Related KR100297628B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019980042154A KR100297628B1 (ko) 1998-10-09 1998-10-09 반도체소자제조방법
TW088117494A TW517331B (en) 1998-10-09 1999-10-11 Method for forming a high-permittivity dielectric film use in a semiconductor device
JP28943099A JP4473378B2 (ja) 1998-10-09 1999-10-12 高誘電体膜形成方法
US09/418,188 US6180542B1 (en) 1998-10-09 1999-10-12 Method for forming a high-permittivity dielectric film use in a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019980042154A KR100297628B1 (ko) 1998-10-09 1998-10-09 반도체소자제조방법

Publications (2)

Publication Number Publication Date
KR20000025179A KR20000025179A (ko) 2000-05-06
KR100297628B1 true KR100297628B1 (ko) 2001-08-07

Family

ID=19553425

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980042154A Expired - Fee Related KR100297628B1 (ko) 1998-10-09 1998-10-09 반도체소자제조방법

Country Status (4)

Country Link
US (1) US6180542B1 (https=)
JP (1) JP4473378B2 (https=)
KR (1) KR100297628B1 (https=)
TW (1) TW517331B (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100358066B1 (ko) * 1999-06-25 2002-10-25 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조 방법
KR100328454B1 (ko) 1999-06-29 2002-03-16 박종섭 반도체 소자의 캐패시터 제조 방법
KR100497142B1 (ko) * 1999-11-09 2005-06-29 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조방법
KR100313091B1 (ko) * 1999-12-29 2001-11-07 박종섭 반도체장치의 ＴａＯＮ 게이트절연막 형성방법
US6825488B2 (en) 2000-01-26 2004-11-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR100618683B1 (ko) * 2000-06-01 2006-09-06 주식회사 하이닉스반도체 반도체 메모리 소자의 캐패시터 제조방법
KR100639200B1 (ko) * 2000-06-30 2006-10-31 주식회사 하이닉스반도체 반도체 메모리 소자의 캐패시터 제조방법
KR100386450B1 (ko) * 2000-12-29 2003-06-02 주식회사 하이닉스반도체 반도체 소자의 커패시터 형성방법
KR100433041B1 (ko) * 2001-12-27 2004-05-24 동부전자 주식회사 반도체 메모리의 커패시터 제조방법
US7081409B2 (en) * 2002-07-17 2006-07-25 Samsung Electronics Co., Ltd. Methods of producing integrated circuit devices utilizing tantalum amine derivatives
US7972897B2 (en) * 2007-02-05 2011-07-05 Intermolecular, Inc. Methods for forming resistive switching memory elements
US8889565B2 (en) * 2009-02-13 2014-11-18 Asm International N.V. Selective removal of oxygen from metal-containing materials
US7829457B2 (en) * 2009-02-20 2010-11-09 Asm International N.V. Protection of conductors from oxidation in deposition chambers
US8507388B2 (en) 2010-04-26 2013-08-13 Asm International N.V. Prevention of oxidation of substrate surfaces in process chambers
JP5683388B2 (ja) 2010-08-19 2015-03-11 株式会社日立国際電気 半導体装置の製造方法、基板処理方法及び基板処理装置
US8569104B2 (en) * 2012-02-07 2013-10-29 Intermolecular, Inc. Transition metal oxide bilayers
US9893271B2 (en) 2015-10-15 2018-02-13 Samsung Electronics Co., Ltd. Semiconductor memory device
CN116666935A (zh) * 2023-06-19 2023-08-29 本源量子计算科技（合肥）股份有限公司 共面波导谐振腔及其制造方法、超导量子芯片

Citations (1)

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Publication number Priority date Publication date Assignee Title
KR940020569A (ko) * 1993-02-17 1994-09-16 세끼모또 다다히로 반도체 장치의 제조방법(Method for manufacturing a Semiconductor memory device)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3558461A (en) * 1968-10-28 1971-01-26 Bell Telephone Labor Inc Thin film resistor and preparation thereof
JPS60208813A (ja) * 1984-04-02 1985-10-21 Mitsubishi Electric Corp 光電変換装置とその製造方法
JPH0521744A (ja) * 1991-07-10 1993-01-29 Sony Corp 半導体記憶装置のキヤパシタおよびその製造方法
JPH08115851A (ja) * 1994-10-14 1996-05-07 Ngk Spark Plug Co Ltd 薄膜コンデンサ付きセラミック基板および その製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940020569A (ko) * 1993-02-17 1994-09-16 세끼모또 다다히로 반도체 장치의 제조방법(Method for manufacturing a Semiconductor memory device)

Also Published As

Publication number Publication date
JP4473378B2 (ja) 2010-06-02
JP2000195859A (ja) 2000-07-14
TW517331B (en) 2003-01-11
US6180542B1 (en) 2001-01-30
KR20000025179A (ko) 2000-05-06

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