KR100288368B1 - 박막트랜지스터와이것을제조하기위한방법 - Google Patents

박막트랜지스터와이것을제조하기위한방법 Download PDF

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Publication number
KR100288368B1
KR100288368B1 KR1019920010701A KR920010701A KR100288368B1 KR 100288368 B1 KR100288368 B1 KR 100288368B1 KR 1019920010701 A KR1019920010701 A KR 1019920010701A KR 920010701 A KR920010701 A KR 920010701A KR 100288368 B1 KR100288368 B1 KR 100288368B1
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KR
South Korea
Prior art keywords
semiconductor layer
layer
thin film
channel
film transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019920010701A
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English (en)
Korean (ko)
Other versions
KR930001502A (ko
Inventor
야수히로미타니
가쑤마사이꾸보
히로히사다나까
히로시모리모토
Original Assignee
마찌다 가쯔히꼬
샤프 가부시키가이샤
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Publication of KR930001502A publication Critical patent/KR930001502A/ko
Application granted granted Critical
Publication of KR100288368B1 publication Critical patent/KR100288368B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon

Landscapes

  • Thin Film Transistor (AREA)
KR1019920010701A 1991-06-17 1992-06-17 박막트랜지스터와이것을제조하기위한방법 Expired - Fee Related KR100288368B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3144914A JP2634505B2 (ja) 1991-06-17 1991-06-17 薄膜トランジスタ及びその製造方法
JP91-144914 1991-06-17

Publications (2)

Publication Number Publication Date
KR930001502A KR930001502A (ko) 1993-01-16
KR100288368B1 true KR100288368B1 (ko) 2001-10-24

Family

ID=15373196

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920010701A Expired - Fee Related KR100288368B1 (ko) 1991-06-17 1992-06-17 박막트랜지스터와이것을제조하기위한방법

Country Status (4)

Country Link
EP (1) EP0519692A3 (enExample)
JP (1) JP2634505B2 (enExample)
KR (1) KR100288368B1 (enExample)
TW (1) TW222715B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10135475A (ja) 1996-10-31 1998-05-22 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US6646287B1 (en) 1999-11-19 2003-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with tapered gate and insulating film
US6825488B2 (en) 2000-01-26 2004-11-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI605590B (zh) 2011-09-29 2017-11-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP6076626B2 (ja) * 2012-06-14 2017-02-08 株式会社ジャパンディスプレイ 表示装置及びその製造方法
JP2014038911A (ja) * 2012-08-13 2014-02-27 Sony Corp 薄膜トランジスタおよびその製造方法、並びに表示装置および電子機器

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4394182A (en) * 1981-10-14 1983-07-19 Rockwell International Corporation Microelectronic shadow masking process for reducing punchthrough

Also Published As

Publication number Publication date
JP2634505B2 (ja) 1997-07-30
TW222715B (enExample) 1994-04-21
JPH04369229A (ja) 1992-12-22
EP0519692A3 (en) 1993-07-21
EP0519692A2 (en) 1992-12-23
KR930001502A (ko) 1993-01-16

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