KR100274094B1 - 음극 스퍼터용 타겟과 동 타겟의 제조방법 - Google Patents

음극 스퍼터용 타겟과 동 타겟의 제조방법 Download PDF

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Publication number
KR100274094B1
KR100274094B1 KR1019960030945A KR19960030945A KR100274094B1 KR 100274094 B1 KR100274094 B1 KR 100274094B1 KR 1019960030945 A KR1019960030945 A KR 1019960030945A KR 19960030945 A KR19960030945 A KR 19960030945A KR 100274094 B1 KR100274094 B1 KR 100274094B1
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KR
South Korea
Prior art keywords
target
indium
powder
oxide
phase
Prior art date
Application number
KR1019960030945A
Other languages
English (en)
Korean (ko)
Other versions
KR970011013A (ko
Inventor
고이 칼-하인츠
후란시스 룹톤 데이비드
쉴케 요르그
쉘츠 후리드홀트
세홀르 베르나르
보마이어 한스
Original Assignee
안드레아스 바우만/ 게하르트 리체르트
베.체. 헤레우스 게엠베하 운트 코. 카게
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 안드레아스 바우만/ 게하르트 리체르트, 베.체. 헤레우스 게엠베하 운트 코. 카게 filed Critical 안드레아스 바우만/ 게하르트 리체르트
Publication of KR970011013A publication Critical patent/KR970011013A/ko
Application granted granted Critical
Publication of KR100274094B1 publication Critical patent/KR100274094B1/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Powder Metallurgy (AREA)
KR1019960030945A 1995-08-18 1996-07-29 음극 스퍼터용 타겟과 동 타겟의 제조방법 KR100274094B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE19530364.4 1995-08-18
DE19530364 1995-08-18
DE19540379,7 1995-10-30
DE19540379A DE19540379C1 (de) 1995-08-18 1995-10-30 Target für die Kathodenzerstäubung und Verfahren zur Herstellung eines solchen Targets
DE19540379.7 1995-10-30

Publications (2)

Publication Number Publication Date
KR970011013A KR970011013A (ko) 1997-03-27
KR100274094B1 true KR100274094B1 (ko) 2000-12-15

Family

ID=7769768

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960030945A KR100274094B1 (ko) 1995-08-18 1996-07-29 음극 스퍼터용 타겟과 동 타겟의 제조방법

Country Status (3)

Country Link
KR (1) KR100274094B1 (de)
DE (2) DE19540379C1 (de)
TW (1) TW324744B (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19721649C2 (de) * 1997-05-23 2003-02-20 Heraeus Gmbh W C Verfahren zur Herstellung eines Mischkristallpulvers mit geringem spezifischen elektrischen Widerstand
FR2839506B1 (fr) * 2002-05-10 2005-06-10 Michelle Paparone Serole Oxyde mixte d'indium etain dit ito a grande conductivite electrique a nanostructure

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02141459A (ja) * 1988-11-22 1990-05-30 Mitsubishi Metal Corp インジウム‐スズ酸化物焼結体の製造法
US5435826A (en) * 1992-11-24 1995-07-25 Hitachi Metals, Ltd. Sputtering target and method for producing same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3300525A1 (de) * 1983-01-10 1984-07-12 Merck Patent Gmbh, 6100 Darmstadt Targets fuer die kathodenzerstaeubung
JPH03207858A (ja) * 1990-01-08 1991-09-11 Nippon Mining Co Ltd Ｉｔｏスパッタリングターゲットの製造方法
DE4124471C1 (en) * 1991-07-24 1992-06-11 Degussa Ag, 6000 Frankfurt, De Target for cathodic sputtering - produced from partially reduced mixtures of indium oxide and tin oxide by hot pressing in inert protective gas
EP0584672B1 (de) * 1992-08-19 1996-06-12 Tosoh Corporation Verfahren zur Herstellung eines Indiumoxidpulvers verwendbar für einen ITO-Sinterkörper mit hoher Dichte
DE4407774C1 (de) * 1994-03-09 1995-04-20 Leybold Materials Gmbh Target für die Kathodenzerstäubung zur Herstellung transparenter, leitfähiger Schichten und Verfahren zu seiner Herstellung

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02141459A (ja) * 1988-11-22 1990-05-30 Mitsubishi Metal Corp インジウム‐スズ酸化物焼結体の製造法
US5435826A (en) * 1992-11-24 1995-07-25 Hitachi Metals, Ltd. Sputtering target and method for producing same

Also Published As

Publication number Publication date
TW324744B (en) 1998-01-11
KR970011013A (ko) 1997-03-27
DE59607443D1 (de) 2001-09-13
DE19540379C1 (de) 1996-09-26

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