KR100263457B1 - 집적 반도체 메모리 장치 - Google Patents

집적 반도체 메모리 장치 Download PDF

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Publication number
KR100263457B1
KR100263457B1 KR1019930010383A KR930010383A KR100263457B1 KR 100263457 B1 KR100263457 B1 KR 100263457B1 KR 1019930010383 A KR1019930010383 A KR 1019930010383A KR 930010383 A KR930010383 A KR 930010383A KR 100263457 B1 KR100263457 B1 KR 100263457B1
Authority
KR
South Korea
Prior art keywords
write
read
memory
address
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019930010383A
Other languages
English (en)
Korean (ko)
Other versions
KR940001169A (ko
Inventor
빌리발트 마이어
노르베르트 비르트
Original Assignee
칼 하인쯔 호르닝어
지멘스 악티엔게젤샤프트
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 칼 하인쯔 호르닝어, 지멘스 악티엔게젤샤프트 filed Critical 칼 하인쯔 호르닝어
Publication of KR940001169A publication Critical patent/KR940001169A/ko
Application granted granted Critical
Publication of KR100263457B1 publication Critical patent/KR100263457B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1075—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for multiport memories each having random access ports and serial ports, e.g. video RAM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/103—Read-write modes for single port memories, i.e. having either a random port or a serial port using serially addressed read-write data registers

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Noodles (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1019930010383A 1992-06-09 1993-06-09 집적 반도체 메모리 장치 Expired - Lifetime KR100263457B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP92109690 1992-06-09
EP92109690.5 1992-06-09

Publications (2)

Publication Number Publication Date
KR940001169A KR940001169A (ko) 1994-01-10
KR100263457B1 true KR100263457B1 (ko) 2000-08-01

Family

ID=8209694

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930010383A Expired - Lifetime KR100263457B1 (ko) 1992-06-09 1993-06-09 집적 반도체 메모리 장치

Country Status (7)

Country Link
US (1) US5329493A (enExample)
JP (1) JP3407934B2 (enExample)
KR (1) KR100263457B1 (enExample)
AT (1) ATE159377T1 (enExample)
DE (1) DE59307527D1 (enExample)
HK (1) HK1001934A1 (enExample)
TW (1) TW226468B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6011744A (en) * 1997-07-16 2000-01-04 Altera Corporation Programmable logic device with multi-port memory
US6034857A (en) 1997-07-16 2000-03-07 Altera Corporation Input/output buffer with overcurrent protection circuit
US6020760A (en) 1997-07-16 2000-02-01 Altera Corporation I/O buffer circuit with pin multiplexing
US6151266A (en) * 1997-10-03 2000-11-21 International Business Machines Corporation Asynchronous multiport register file with self resetting write operation
US6088812A (en) * 1998-07-21 2000-07-11 Micron Technology, Inc. Sequential data transfer method
US6163819A (en) 1998-07-21 2000-12-19 Micron Technology, Inc. Sequential data transfer circuit
US6316020B1 (en) * 1999-08-26 2001-11-13 Robert R. Whittle Pharmaceutical formulations
CN103172393B (zh) * 2013-02-26 2014-06-25 宝钢集团新疆八一钢铁有限公司 一种转炉铁水脱硫搅拌桨的浇铸生产方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6072020A (ja) * 1983-09-29 1985-04-24 Nec Corp デュアルポ−トメモリ回路
JPH07111822B2 (ja) * 1986-03-07 1995-11-29 株式会社日立製作所 半導体記憶装置
DE3786358T2 (de) * 1986-03-10 1993-10-14 Nippon Electric Co Halbleiterspeicher mit System zum seriellen Schnellzugriff.
JPH0740430B2 (ja) * 1986-07-04 1995-05-01 日本電気株式会社 メモリ装置
JP2502292B2 (ja) * 1986-09-01 1996-05-29 キヤノン株式会社 光学変調素子の駆動法
JPH083956B2 (ja) * 1986-09-18 1996-01-17 日本テキサス・インスツルメンツ株式会社 半導体記憶装置
US4789960A (en) * 1987-01-30 1988-12-06 Rca Licensing Corporation Dual port video memory system having semi-synchronous data input and data output
US5093807A (en) * 1987-12-23 1992-03-03 Texas Instruments Incorporated Video frame storage system
DE69020384T2 (de) * 1989-02-27 1996-03-21 Nippon Electric Co Integrierte Halbleiterspeicherschaltung mit Möglichkeit zum Maskieren des Schreibens im Speicher.
JP2530055B2 (ja) * 1990-08-30 1996-09-04 株式会社東芝 半導体集積回路
DE69124932D1 (de) * 1990-10-31 1997-04-10 Ibm Video-RAM mit schnellen Rücksetzung und Kopiermöglichkeit

Also Published As

Publication number Publication date
JP3407934B2 (ja) 2003-05-19
TW226468B (enExample) 1994-07-11
ATE159377T1 (de) 1997-11-15
KR940001169A (ko) 1994-01-10
US5329493A (en) 1994-07-12
DE59307527D1 (de) 1997-11-20
HK1001934A1 (en) 1998-07-17
JPH0696581A (ja) 1994-04-08

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