KR100235548B1 - 열처리로 및 그 제조방법 - Google Patents

열처리로 및 그 제조방법 Download PDF

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Publication number
KR100235548B1
KR100235548B1 KR1019940029435A KR19940029435A KR100235548B1 KR 100235548 B1 KR100235548 B1 KR 100235548B1 KR 1019940029435 A KR1019940029435 A KR 1019940029435A KR 19940029435 A KR19940029435 A KR 19940029435A KR 100235548 B1 KR100235548 B1 KR 100235548B1
Authority
KR
South Korea
Prior art keywords
heat
insulating material
support
heat insulating
heat generating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019940029435A
Other languages
English (en)
Korean (ko)
Other versions
KR950015544A (ko
Inventor
마사루 히다노
야스아키 미우라
오사무 요코가와
Original Assignee
히가시 데쓰로
동경 엘렉트론주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP5305956A external-priority patent/JPH07135179A/ja
Priority claimed from JP6071552A external-priority patent/JPH07253276A/ja
Application filed by 히가시 데쓰로, 동경 엘렉트론주식회사 filed Critical 히가시 데쓰로
Publication of KR950015544A publication Critical patent/KR950015544A/ko
Application granted granted Critical
Publication of KR100235548B1 publication Critical patent/KR100235548B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/12—Heating of the reaction chamber
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D1/00—Casings; Linings; Walls; Roofs
    • F27D1/0003—Linings or walls
    • F27D1/0036—Linings or walls comprising means for supporting electric resistances in the furnace
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Resistance Heating (AREA)
  • Furnace Details (AREA)
  • Chemical Vapour Deposition (AREA)
KR1019940029435A 1993-11-10 1994-11-10 열처리로 및 그 제조방법 Expired - Lifetime KR100235548B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP93-305956 1993-11-10
JP5305956A JPH07135179A (ja) 1993-11-10 1993-11-10 熱処理炉製造方法および熱処理炉
JP94-71552 1994-03-16
JP6071552A JPH07253276A (ja) 1994-03-16 1994-03-16 熱処理炉及びその製造方法

Publications (2)

Publication Number Publication Date
KR950015544A KR950015544A (ko) 1995-06-17
KR100235548B1 true KR100235548B1 (ko) 1999-12-15

Family

ID=26412656

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940029435A Expired - Lifetime KR100235548B1 (ko) 1993-11-10 1994-11-10 열처리로 및 그 제조방법

Country Status (4)

Country Link
US (1) US5506389A (enExample)
JP (1) JP2840558B2 (enExample)
KR (1) KR100235548B1 (enExample)
TW (1) TW273637B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100727014B1 (ko) 2005-09-26 2007-06-13 가부시키가이샤 히다치 고쿠사이 덴키 단열벽체, 발열체의 유지 구조체, 가열 장치 및 기판 처리장치
KR101332094B1 (ko) 2006-09-22 2013-11-22 도쿄엘렉트론가부시키가이샤 열처리로 및 그 제조 방법
KR101891659B1 (ko) * 2016-10-14 2018-08-24 (주)피앤테크 전력 반도체용 초고온 열처리 공정 장비 개발에 대한　단열 플레이트가 구비되는 튜브 매립형 소성로

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10233277A (ja) * 1997-02-18 1998-09-02 Tokyo Electron Ltd 熱処理装置
US6005225A (en) * 1997-03-28 1999-12-21 Silicon Valley Group, Inc. Thermal processing apparatus
JP3848442B2 (ja) * 1997-08-20 2006-11-22 株式会社日立国際電気 ヒータ支持装置及び半導体製造装置及び半導体装置の製造方法
US6059567A (en) * 1998-02-10 2000-05-09 Silicon Valley Group, Inc. Semiconductor thermal processor with recirculating heater exhaust cooling system
JP3479020B2 (ja) * 2000-01-28 2003-12-15 東京エレクトロン株式会社 熱処理装置
US20050063451A1 (en) * 2002-02-28 2005-03-24 Shin-Etsu Handotai Co., Ltd Temperature measuring system, heating device using it and production method for semiconductor wafer, heat ray insulating translucent member, visible light reflection membner, exposure system-use reflection mirror and exposure system, and semiconductor device produced by using them and vetical heat treating device
US6932957B2 (en) * 2002-06-28 2005-08-23 Silicon Light Machines Corporation Method and apparatus for increasing bulk conductivity of a ferroelectric material
US20040178137A1 (en) * 2003-03-10 2004-09-16 Koichi Itoh Reinforcement structures for multi-cell filter cartridge
SE528334C2 (sv) * 2004-09-16 2006-10-24 Sandvik Intellectual Property Ugnsisolering samt ugn försedd med nämnda islering
NL1028057C2 (nl) * 2005-01-18 2006-07-19 Tempress Systems Inrichting voor het op zijn plaats houden van verhittingsdraden in een horizontale oven.
US7863204B2 (en) * 2005-08-24 2011-01-04 Hitachi Kokusai Electric Inc. Substrate processing apparatus, heating apparatus for use in the same, method of manufacturing semiconductors with those apparatuses, and heating element supporting structure
JP4820137B2 (ja) * 2005-09-26 2011-11-24 株式会社日立国際電気 発熱体の保持構造体
JP4794360B2 (ja) * 2006-06-02 2011-10-19 株式会社日立国際電気 基板処理装置
WO2008100917A1 (en) * 2007-02-16 2008-08-21 Caracal, Inc. Epitaxial growth system for fast heating and cooling
JP5248874B2 (ja) * 2007-03-20 2013-07-31 東京エレクトロン株式会社 熱処理炉及び縦型熱処理装置
US8023806B2 (en) * 2007-03-20 2011-09-20 Tokyo Electron Limited Heat processing furnace and vertical-type heat processing apparatus
JP4445519B2 (ja) * 2007-06-01 2010-04-07 東京エレクトロン株式会社 熱処理炉及びその製造方法
JP5139734B2 (ja) * 2007-06-25 2013-02-06 株式会社日立国際電気 基板処理装置及びこれに用いられる加熱装置
JP5096182B2 (ja) * 2008-01-31 2012-12-12 東京エレクトロン株式会社 熱処理炉
JP5134595B2 (ja) * 2009-07-09 2013-01-30 東京エレクトロン株式会社 熱処理炉
JP5868619B2 (ja) * 2011-06-21 2016-02-24 ニチアス株式会社 熱処理炉及び熱処理装置
JP5426618B2 (ja) * 2011-07-19 2014-02-26 株式会社日立国際電気 絶縁構造体、加熱装置、基板処理装置および半導体装置の製造方法
KR101456831B1 (ko) * 2012-06-20 2014-11-03 엘지디스플레이 주식회사 디스플레이장치 제조용 가열장치
JP5497860B2 (ja) * 2012-08-29 2014-05-21 東京エレクトロン株式会社 熱処理炉及び熱処理炉用支持体
US20140166640A1 (en) * 2012-12-13 2014-06-19 Sandvik Thermal Process Inc Support for resisting radial creep of a heating element coil
JP6091377B2 (ja) 2013-08-21 2017-03-08 東京エレクトロン株式会社 断熱壁体の製造方法
CN105789084B (zh) * 2014-12-17 2019-04-23 北京北方华创微电子装备有限公司 加热腔室以及半导体加工设备
WO2020070064A1 (en) * 2018-10-01 2020-04-09 Vapalahti Sami Kristian Energy efficient heating process
CN112071545B (zh) * 2020-09-01 2024-06-11 安徽省瀚海新材料股份有限公司 一种提高钕铁硼基材矫顽力的表面处理方法
JP7271485B2 (ja) * 2020-09-23 2023-05-11 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法およびプログラム
CN117979474B (zh) * 2024-03-29 2024-06-07 楚赟精工科技(上海)有限公司 半导体设备加热装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60239371A (ja) * 1984-05-14 1985-11-28 佐藤　宏 断熱耐火セラミックスの製造方法
JPS60246582A (ja) * 1984-05-21 1985-12-06 佐藤　宏 複合構造電気抵抗発熱器及びその製造方法
JPH0612694B2 (ja) * 1986-07-19 1994-02-16 佐藤 宏 Ｆｅ−Ｃｒ−Ａｌ系発熱体を用いた電熱装置用電気絶縁耐火物
US5038019A (en) * 1990-02-06 1991-08-06 Thermtec, Inc. High temperature diffusion furnace
JPH079036Y2 (ja) * 1990-11-13 1995-03-06 東京エレクトロン東北株式会社 縦型熱処理炉
JPH0739908B2 (ja) * 1991-02-28 1995-05-01 ニチアス株式会社 加熱装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100727014B1 (ko) 2005-09-26 2007-06-13 가부시키가이샤 히다치 고쿠사이 덴키 단열벽체, 발열체의 유지 구조체, 가열 장치 및 기판 처리장치
KR100762059B1 (ko) * 2005-09-26 2007-10-01 가부시키가이샤 히다치 고쿠사이 덴키 단열벽체, 발열체의 유지 구조체, 가열 장치 및 기판 처리장치
KR101332094B1 (ko) 2006-09-22 2013-11-22 도쿄엘렉트론가부시키가이샤 열처리로 및 그 제조 방법
KR101891659B1 (ko) * 2016-10-14 2018-08-24 (주)피앤테크 전력 반도체용 초고온 열처리 공정 장비 개발에 대한　단열 플레이트가 구비되는 튜브 매립형 소성로

Also Published As

Publication number Publication date
KR950015544A (ko) 1995-06-17
JP2840558B2 (ja) 1998-12-24
JPH0864546A (ja) 1996-03-08
US5506389A (en) 1996-04-09
TW273637B (enExample) 1996-04-01

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