KR100232039B1 - 플라즈마 cvd 장치, 플라즈마 처리장치 및 플라즈마 cvd 방법 - Google Patents

플라즈마 cvd 장치, 플라즈마 처리장치 및 플라즈마 cvd 방법 Download PDF

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Publication number
KR100232039B1
KR100232039B1 KR1019960038568A KR19960038568A KR100232039B1 KR 100232039 B1 KR100232039 B1 KR 100232039B1 KR 1019960038568 A KR1019960038568 A KR 1019960038568A KR 19960038568 A KR19960038568 A KR 19960038568A KR 100232039 B1 KR100232039 B1 KR 100232039B1
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South Korea
Prior art keywords
plasma
generating electrode
plasma generating
plasma cvd
processing chamber
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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KR1019960038568A
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English (en)
Korean (ko)
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KR970021369A (ko
Inventor
료키 도베
마사오 사사키
아츠시 세키구치
Original Assignee
니시히라 순지
아네르바 가부시키가이샤
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Publication of KR970021369A publication Critical patent/KR970021369A/ko
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Publication of KR100232039B1 publication Critical patent/KR100232039B1/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • ing And Chemical Polishing (AREA)
KR1019960038568A 1995-10-09 1996-09-06 플라즈마 cvd 장치, 플라즈마 처리장치 및 플라즈마 cvd 방법 Expired - Lifetime KR100232039B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP95-286342 1995-10-09
JP7286342A JPH09106898A (ja) 1995-10-09 1995-10-09 プラズマｃｖｄ装置、プラズマ処理装置及びプラズマｃｖｄ方法

Publications (2)

Publication Number Publication Date
KR970021369A KR970021369A (ko) 1997-05-28
KR100232039B1 true KR100232039B1 (ko) 1999-12-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960038568A Expired - Lifetime KR100232039B1 (ko) 1995-10-09 1996-09-06 플라즈마 cvd 장치, 플라즈마 처리장치 및 플라즈마 cvd 방법

Country Status (4)

Country Link
US (1) US5855685A (enExample)
JP (1) JPH09106898A (enExample)
KR (1) KR100232039B1 (enExample)
TW (1) TW317690B (enExample)

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Publication number Publication date
TW317690B (enExample) 1997-10-11
JPH09106898A (ja) 1997-04-22
KR970021369A (ko) 1997-05-28
US5855685A (en) 1999-01-05

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