KR100228455B1 - 반도체 메모리 회로 - Google Patents

반도체 메모리 회로 Download PDF

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Publication number
KR100228455B1
KR100228455B1 KR1019960071474A KR19960071474A KR100228455B1 KR 100228455 B1 KR100228455 B1 KR 100228455B1 KR 1019960071474 A KR1019960071474 A KR 1019960071474A KR 19960071474 A KR19960071474 A KR 19960071474A KR 100228455 B1 KR100228455 B1 KR 100228455B1
Authority
KR
South Korea
Prior art keywords
address
signal
shift
shift register
column
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019960071474A
Other languages
English (en)
Korean (ko)
Other versions
KR970051298A (ko
Inventor
가즈오 이누즈까
시게오 오시마
가쯔시 나가바
Original Assignee
니시무로 타이죠
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 니시무로 타이죠, 가부시키가이샤 도시바 filed Critical 니시무로 타이죠
Publication of KR970051298A publication Critical patent/KR970051298A/ko
Application granted granted Critical
Publication of KR100228455B1 publication Critical patent/KR100228455B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/04—Arrangements for selecting an address in a digital store using a sequential addressing device, e.g. shift register, counter

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
KR1019960071474A 1995-12-25 1996-12-24 반도체 메모리 회로 Expired - Fee Related KR100228455B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7337279A JPH09180443A (ja) 1995-12-25 1995-12-25 半導体メモリ回路
JP95-337279 1995-12-25

Publications (2)

Publication Number Publication Date
KR970051298A KR970051298A (ko) 1997-07-29
KR100228455B1 true KR100228455B1 (ko) 1999-11-01

Family

ID=18307121

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960071474A Expired - Fee Related KR100228455B1 (ko) 1995-12-25 1996-12-24 반도체 메모리 회로

Country Status (6)

Country Link
US (1) US5777946A (https=)
EP (1) EP0782143B1 (https=)
JP (1) JPH09180443A (https=)
KR (1) KR100228455B1 (https=)
DE (1) DE69622138T2 (https=)
TW (1) TW312766B (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4612139B2 (ja) * 2000-02-08 2011-01-12 富士通セミコンダクター株式会社 入力回路及びその入力回路を利用する半導体装置
KR100368132B1 (ko) 2000-03-27 2003-01-15 한국과학기술원 메모리 어드레싱 방법
JP2002366428A (ja) * 2001-06-06 2002-12-20 Mitsubishi Electric Corp メモリコントローラ
US6980030B1 (en) * 2003-06-26 2005-12-27 Xilinx, Inc. Embedded function units with decoding
KR20050082055A (ko) * 2004-02-17 2005-08-22 삼성전자주식회사 메모리 제어 장치 및 방법
US10346244B2 (en) 2017-08-10 2019-07-09 Micron Technology, Inc. Shared address counters for multiple modes of operation in a memory device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4624006A (en) * 1985-05-10 1986-11-18 Linear Technology Corporation Bidirectional shift register using parallel inverters with adjustable transconductance
DE3742514A1 (de) * 1986-12-24 1988-07-07 Mitsubishi Electric Corp Variable verzoegerungsschaltung
US4985872A (en) * 1989-06-23 1991-01-15 Vlsi Technology, Inc. Sequencing column select circuit for a random access memory
JP3080520B2 (ja) * 1993-09-21 2000-08-28 富士通株式会社 シンクロナスｄｒａｍ
JP3185568B2 (ja) * 1994-11-22 2001-07-11 日本電気株式会社 半導体記憶装置
US5598376A (en) * 1994-12-23 1997-01-28 Micron Technology, Inc. Distributed write data drivers for burst access memories

Also Published As

Publication number Publication date
US5777946A (en) 1998-07-07
EP0782143A2 (en) 1997-07-02
EP0782143B1 (en) 2002-07-03
DE69622138T2 (de) 2002-12-12
DE69622138D1 (de) 2002-08-08
TW312766B (https=) 1997-08-11
KR970051298A (ko) 1997-07-29
EP0782143A3 (en) 1998-06-24
JPH09180443A (ja) 1997-07-11

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