KR0152557B1 - 다이 어태치 공정에서 에폭시 테일의 발생을 억제하는 방법 - Google Patents
다이 어태치 공정에서 에폭시 테일의 발생을 억제하는 방법Info
- Publication number
- KR0152557B1 KR0152557B1 KR1019950035777A KR19950035777A KR0152557B1 KR 0152557 B1 KR0152557 B1 KR 0152557B1 KR 1019950035777 A KR1019950035777 A KR 1019950035777A KR 19950035777 A KR19950035777 A KR 19950035777A KR 0152557 B1 KR0152557 B1 KR 0152557B1
- Authority
- KR
- South Korea
- Prior art keywords
- epoxy
- die
- lead frame
- pad
- epoxy adhesive
- Prior art date
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Abstract
본 발명은 리드 프레임의 다이 패드 위에 반도체 칩을 부착하는 다이 어태치 공정에서 Ag-에폭시 등의 접착제를 리드 프레임 패드에 도팅법으로 도포할 때 발생하는 에폭시 테일 (epoxy tail)의 발생을 억제하기 위한 방법으로서, 도팅되는 Ag-에폭시에 50℃ 내지 70℃의 공기나 질소 가스 (N2)를 불어주어 Ag-에폭시의 점도를 순간적으로 낮추어 주어서 에폭시 테일의 발생을 억제하여 에폭시 접착제가 다이위로 올라 가거나 패드 위에 남게 되어 생기는 불량을 근본적으로 막을 수 있다.
Description
제1도는 종래 기술에 따른 Ag-에폭시 도포 장치의 개략도.
제2도는 Ag-에폭시의 온도에 따른 점도의 변화량을 나타내는 그래프.
제3도는 본 발명에 따른 Ag-에폭시 도포 방법을 설명하기 위한 개략도.
* 도면의 주요부분에 대한 부호의 설명
2, 20 : Ag-에폭시 4, 14 : 리드 프레임
6, 16 : 다이 패드 7, 17 : 에폭시 튜브
8, 18 : 에폭시 도포 장치 9, 19 : 도포기
10 : 관
[산업상 이용분야]
본 발명은 반도체 칩을 조립하는 패키지 공정에 관한 것으로서, 보다 구체적으로는 개별 반도체 칩을 리드 프레임의 다이 패드에 어태치하는 다이 어태치하는 공정에서 에폭시 테일에 의한 불량을 장지할 수 있는 접착제 도포 방법에 관한 것이다.
[발명의 배경]
다이 어태치 (die attach) 공정이란 웨이퍼를 개별 반도체 칩(=다이)으로 분리한 다음에 리드 프레임의 다이 패드 부분에 접착시키는 공정을 말한다.
다이 어태치 공정에 사용되는 접착제는 크게 연성 (soft) 접착제와 경성 (hard) 접착제로 나누어진다. 연성 접착제는 납을 주성분으로 하는 솔더 (lead-based solder)와 열 전도성 입자가 충전(充塡)된 (filled) 에폭시나 폴리이미드(polyimide) 등의 유기물 접착제를 말한다. 다이와 리드 프레임 간의 열적 불일치는 일차적으로 접착제에 의해 흡수되고 약간의 열적 스트레스만 다이에 전달된다. 경성 접착제로는 금을 주성분으로 하는 유태틱 (euteic) 접착제 예컨데, AuSi, AuSn, AuGe 등이 있다.
플라스틱 패키지의 조립 공정에서는 열 전도성이 뛰어난 은(Ag)을 충전제(filler)로 사용한 에폭시 (이하 'Ag-에폭시'라 함)를 주로 사용한다.
제1도는 종래 기술에 따른 다이 어태치 공정에서 사용되는 Ag-도포 장치의 개략도이다. Ag-에폭시(2)가 들어있는 도포 장치(8)는 다이 어태치하고자 하는 리드 프레임(4)의 다이 패드(6) 위에 정렬되고 도팅법(dotting)을 사용하여 점을 찍듯이 패드(6)위에 Ag-에폭시(2)를 떨어뜨려 놓는다. 도포 장치(8)는 Ag-에폭시(2)가 들어 있는 튜브(7)와 실제로 Ag-에폭시(2)를 점형태로 떨어뜨리는 도포기(dotter: 9)를 구비하고 있다. 도면에 도시되지는 않았지만, Ag-에폭시(2)가 도팅되어 있는 리드 프레임의 패드(6)위에 어태치하고자 하는 다이를 올려 놓고 열 분위기 하에서 양자를 눌러주면 다이가 다이 패드(6)위에 접착된다.
도팅법에 사용되는 Ag-에폭시(2)는 일정량의 점도(viscosity)를 가지고 있는데, 이러한 점성에 의해 에폭시 테일 (epoxy tail)이 다이 위에 남거나 리드 프레임의 다이 패드위에 남게 되어 패키지 불량이 발생된다.
제2도는 온도의 변화에 따른 Ag-에폭시의 점도의 변화를 나타내는 그래프이다. Ag-에폭시는 온도가 높아지면 점도가 떨어지는 반비례 관계를 가지고 있다. 일반적으로 Ag-에폭시가 사용되는 실내의 온도는 23℃ 내지 25℃ 정도에서 작업이 이루어지고 있다. Ag-에폭시의 점도가 높으면 에폭시 도팅 시 에폭시 테일이 많이 발생하고 Ag-에폭시의 점도가 낮으면 에폭시 테일이 적게 발생한다. 그러나 에폭시 테일을 줄이기 위해서 에폭시의 점도를 낮추면 에폭시 튜브안에 들어 있던 Ag-에폭시가 도포기를 통해 흘러내리기 때문에 일정 수준 이하로 점도를 낮출 수는 없다.
[발명의 요약]
따라서 본 발명의 목적은 도팅법을 사용한 다이 어태치 공정에서 접착제인 에폭시의 찌거기가 남는 에폭시 테일에 의한 불량 방지할 수 있는 접착제 도포 방법을 제공하는 것이다.
이러한 목적을 달성하기 위한 본 발명의 특징은 Ag-에폭시의 도팅 시 순간적으로 50℃ 내지 70℃ 정도로 에폭시의 온도를 상승시켜서 에폭시의 점도를 순간적으로 낮추어 주는 것이다.
이하 도면을 참조로 본 발명을 상세하게 설명한다.
제3도는 본 발명에 다른 방법을 사용한 에폭시 접착제의 도팅 방법을 설명하기 위한 개략도이다. Ag-에폭시 도포 장치(18)는 에폭시 튜브(17)와 도포기(19)를 구비하고 있으며, 도포하고자 하는 Ag-에폭시는 에폭시 튜브(17)에 들어있다. 리드 프레임(14)의 다이 패드(16)위에 도포기(19)가 위치하도록 리드 프레임(14)과 도포 장치(18)를 정렬한 다음에 리드 프레임의 다이 패드(16)위에 일정한 양의 Ag-에폭시를 도팅하게 되는데, 이때 관(10)을 통해서 50℃ 내지 70℃ 가량의 공기를 도팅되는 Ag-에폭시에 불어주게 되면, Ag-에폭시(20)의 점도가 30 [poise] 이하로 순간적으로 낮아져서 에폭시 테일의 발생이 억제된다.
제3도에서는 설명의 편의상 한쪽 방향에서 고온의 공기를 불어 주는 경우를 도시하였지만, 에폭시 테일의 억제 효과를 높이기 위해서 양쪽 또는 여러 방향에서 공기를 불어 주는 것도 물론 가능하다.
또한 공기를 불어 주는 대신에 50℃ 내지 70℃ 가량의 질소 가스 (N2)를 불어 주어도 동일한 효과를 얻을 수 있다.
제4a도 내지 제4c도는 본 발명을 적용한 Ag-에폭시 접착제의 도포 공정을 설명하기 위한 개략도이다. 여기에 도시되어 있는 도포 장치(28)는 에폭시가 들어 있는 튜브(30)와 도포기 몸체(22) 및 노즐(24)을 구비하고 있는데, 제3도와는 달리 여러개의 노즐(24)을 구비하고 있어서 한 번의 공정으로 다이 패드(26)위에 접착제를 도팅 할 수 있다. 먼저 제4a도에 도시한 바와 같이 도포 장치(28)가 화살표 방향으로 아래로 내려와 다이 패드(26)와 접촉하게 된다. 이때 에폭시 튜브(27)로부터 일정한 압력을 받아서 노즐(24)의 끝단에서 Ag-에폭시가 다이 패드(26)에 부착된다. 실제로는 노즐(24)과 다이 패드(26)는 완전히 접촉되지는 않고 약간의 공간을 두고 떨어져 있어서 Ag-에폭시가 다이 패드(26)에 부착되는 것을 돕게 된다. 그 다음에, 제4c도에 나타난 것처럼, 50℃ 내지 70℃의 공기나 질소 가스를 불어주면, 도팅된 Ag-에폭시 접착제(30)가 순간적으로 점성을 잃게 되고 본 발면의 목적을 달성 할 수 있게된다.
이상 설명한 바와 같이 Ag-에폭시를 리드 프레임의 다이 패드에 도팅할 때 순간적으로 Ag-에폭시의 온도를 고온이 되게 하여 Ag-에폭시의 점도를 낮추어 줌으로써 에폭시 테일의 발생을 억제하고 에폭시가 다이나 패드 위에 남게 되어 발생하는 분량을 근본적으로 방지하는 것이 가능하다.
Claims (6)
- 반도체 칩이 부착되는 패드를 구비하는 리드 프레임의 상기 패드에 반도체 칩을 에폭시 접착제를 사용하여 부착하는 다이 어태치 공정에 있어서, 상기 에폭시 접착제를 상기 리드 프레임의 패드에 도포할 때 도포되는 에폭시 접착제의 점도를 순간적으로 낮추어 줌으로써 에폭시 테일의 발생을 억제하는 방법.
- 제1항에 있어서, 에폭시 접착제의 점도를 낮추는 것은 상기 에폭시 접착제에 50℃ 내지 70℃ 범위를 온도를 갖는 공기를 불어주는 것에 의해 달성되는 것을 특징으로 하는 에폭시 테일의 발생을 억제하는 방법.
- 제2항에 있어서, 상기 온도 범위의 공기를 적어도 한 방향 이상에서 에폭시 접착제 쪽으로 불어 주는 것을 특징으로 하는 에폭시 테일의 발생을 억제하는 방법.
- 제2항에 있어서, 상기 에폭시 접착제는 은(Ag)을 충전재로 사용하는 것을 특징으로 하는 에폭시 테일의 발생을 억제하는 방법.
- 제2항에 있어서, 상기 에폭시 접착제는 상기 리드 프레임 패드 상면에 도팅법에 의해 도포되는 것을 특징으로 하는 에폭시 테일의 발생을 억제하는 방법.
- 제2항에 있어서, 상기 공기는 질소 가스인 것을 특징으로 하는 에폭시 테일의 발생을 억제하는 방법.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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KR1019950035777A KR0152557B1 (ko) | 1995-10-17 | 1995-10-17 | 다이 어태치 공정에서 에폭시 테일의 발생을 억제하는 방법 |
CN96100609A CN1078385C (zh) | 1995-10-17 | 1996-01-04 | 管芯连接的一种改进方法 |
JP8003364A JPH09129656A (ja) | 1995-10-17 | 1996-01-11 | ダイアタッチ工程からエポキシテールの発生を抑制する方法 |
US08/632,050 US5851853A (en) | 1995-10-17 | 1996-04-15 | Method of attaching a die onto a pad of a lead frame |
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KR1019950035777A KR0152557B1 (ko) | 1995-10-17 | 1995-10-17 | 다이 어태치 공정에서 에폭시 테일의 발생을 억제하는 방법 |
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KR970024077A KR970024077A (ko) | 1997-05-30 |
KR0152557B1 true KR0152557B1 (ko) | 1998-10-01 |
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KR1019950035777A KR0152557B1 (ko) | 1995-10-17 | 1995-10-17 | 다이 어태치 공정에서 에폭시 테일의 발생을 억제하는 방법 |
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US (1) | US5851853A (ko) |
JP (1) | JPH09129656A (ko) |
KR (1) | KR0152557B1 (ko) |
CN (1) | CN1078385C (ko) |
Cited By (1)
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KR20120007327A (ko) * | 2010-07-14 | 2012-01-20 | 주식회사 탑 엔지니어링 | 반도체패키지 제조용 수지도포장치 |
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JP3992893B2 (ja) * | 1999-12-02 | 2007-10-17 | 富士通株式会社 | 半導体装置のアンダーフィル方法 |
US7086860B2 (en) * | 2002-02-20 | 2006-08-08 | Schuman Walter F | Implant placement system |
JP4200758B2 (ja) * | 2002-12-26 | 2008-12-24 | 株式会社日立ハイテクノロジーズ | パネルの樹脂塗布方法、ディスプレイ用パネルの製造方法及び樹脂塗布装置 |
KR100506035B1 (ko) * | 2003-08-22 | 2005-08-03 | 삼성전자주식회사 | 반도체 패키지 및 그 제조방법 |
JP4426917B2 (ja) * | 2004-07-16 | 2010-03-03 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
KR101038493B1 (ko) * | 2004-11-12 | 2011-06-01 | 삼성테크윈 주식회사 | 극초단파용 라디오 주파수 인식태그 제조방법 |
US20080073028A1 (en) * | 2006-08-31 | 2008-03-27 | Frank Yu | Methods and apparatus to dispense adhesive for semiconductor packaging |
EP2622951A4 (en) * | 2010-09-28 | 2016-12-07 | Georgia Tech Res Inst | SECOND-LEVEL NETWORKING STRUCTURES AND METHOD OF MANUFACTURING THEM |
GB201300483D0 (en) * | 2013-01-11 | 2013-02-27 | Zephyros Inc | Extrusion of bands of material |
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ATE28731T1 (de) * | 1984-02-29 | 1987-08-15 | Steinel Gmbh & Co Kg | Heissklebepistole. |
US4778642A (en) * | 1986-06-17 | 1988-10-18 | Robotic Vision Systems, Inc. | Sealant bead profile control |
JPS63244744A (ja) * | 1987-03-31 | 1988-10-12 | Sony Corp | 粘性材料の塗布方法とその装置 |
JPH04171969A (ja) * | 1990-11-06 | 1992-06-19 | Fujitsu Ltd | 実装icチップ樹脂封止構造及び樹脂封止方法 |
JPH06333763A (ja) * | 1993-05-24 | 1994-12-02 | Tokyo Electric Co Ltd | 放電灯安定器 |
US5423889A (en) * | 1994-06-24 | 1995-06-13 | Harris Corporation | Process for manufacturing a multi-port adhesive dispensing tool |
-
1995
- 1995-10-17 KR KR1019950035777A patent/KR0152557B1/ko not_active IP Right Cessation
-
1996
- 1996-01-04 CN CN96100609A patent/CN1078385C/zh not_active Expired - Fee Related
- 1996-01-11 JP JP8003364A patent/JPH09129656A/ja active Pending
- 1996-04-15 US US08/632,050 patent/US5851853A/en not_active Expired - Lifetime
Cited By (1)
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KR20120007327A (ko) * | 2010-07-14 | 2012-01-20 | 주식회사 탑 엔지니어링 | 반도체패키지 제조용 수지도포장치 |
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Publication number | Publication date |
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US5851853A (en) | 1998-12-22 |
CN1148267A (zh) | 1997-04-23 |
CN1078385C (zh) | 2002-01-23 |
JPH09129656A (ja) | 1997-05-16 |
KR970024077A (ko) | 1997-05-30 |
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