CN1148267A - 芯片连接的一种改进方法 - Google Patents

芯片连接的一种改进方法 Download PDF

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CN1148267A
CN1148267A CN96100609A CN96100609A CN1148267A CN 1148267 A CN1148267 A CN 1148267A CN 96100609 A CN96100609 A CN 96100609A CN 96100609 A CN96100609 A CN 96100609A CN 1148267 A CN1148267 A CN 1148267A
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chip
adhesive
epoxy
chip pad
viscosity
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CN1078385C (zh
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李华镛
田钟根
金泰赫
李在院
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Samsung Electronics Co Ltd
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Abstract

一个使用环氧树脂粘合剂将半导体芯片连接到导线构架的芯片垫片上的改进的方法,包括以下步骤:将粘合剂分送到芯片垫片上;即刻地减小分送到芯片垫片上的粘合剂的粘滞度,从而避免形成环氧树脂的尾部;并且将芯片置入粘合剂并且在该处放置芯片,把芯片与芯片垫片连接。

Description

芯片连接的一种改进方法
本发明涉及组装半导体芯片封壳的一种方法,特别地,涉及将单个半导体芯片连接到一个导线构架的芯片垫片上的一种改进方法。
“芯片连接”(die attachment”)的工艺是这样一个步骤,特征在于由切割晶片而产生的单个芯片被连接到导线构架的芯片垫片上。
芯片连接材料可以分为两个种类:软的和硬的粘和剂。软的粘和剂包括一种以铅为基础的共晶焊料(Lead-based eutectic solder)和有机粘和剂,例如填充了导热粒子的环氧树脂或聚酰亚胺。粘和剂的作用是将芯片固定到垫片上并且减轻加到芯片上的应力。大部分由于芯片和导线构架间的温度差所产生的应力被粘和剂吸收,只有一小部分应力转加到芯片上。硬的粘和剂包括主要由金所组成的共晶体(eutectic mainly composed of gold),例如AuSi,AuSn,AuGe等一类的。
对于塑料封壳的组装,填充了银的环氧树脂被广泛地应用。银是一种很好的导热导体。图1是一个用来将芯片连接粘合剂分送到导体构架的垫片上的常规设备的部分示意图。包含有银环氧树脂(Ag-epoxy)(2)的设备(8)被放置在一个导体构架(4)的芯片垫片(6)之上并且把一个特定量的粘合剂,例如是银环氧树脂(Ag-e-poxy),分送到芯片垫片(6)上。设备(8)包括一个包含有银环氧树脂粘和剂(Ag-epoxyadhesive)的注射管(syringe),和用于分送银环氧树脂的点标器(9)。即使没有在图中表示出来,一个半导体芯片被置于粘和剂之中并且在热的大气压下被安置在一个希望的粘合层厚度上。
由于银环氧树脂具有一定的粘滞度,在分送设备(dispenser e-quipment)与分送到垫片上的银环氧树脂之间形成了一个环氧树脂尾部(an epoxy tail),如箭头A所示,这个尾部会导致短路或至少引起导线或芯片的环氧树脂污染。
图2表示了银环氧树脂的粘滞度随温度的变化。银环氧化树脂具有与温度成反比的粘滞度。使用银环氧树脂的芯片连接通常是在23℃至25℃的温度下进行的。银环氧树脂的粘滞度越高,环氧树脂的尾部越大,银环氧树脂的粘滞度越低,环氧树脂的尾部越小。因此,能够通过减小装在注射管中的银环氧树脂的粘滞度来减小环氧树脂尾部的形成。但是,因为银环氧树脂是以一个低的粘滞度蔓延的,银环氧树脂的粘滞度不会低于一个特定值。
因此,本发明的目标是提供一个将半导体芯片连接到导体构架的芯片垫片上的方法,这一方法避免了在芯片连接过程中形成环氧树脂尾部,从而避免了由于环氧树脂尾部的形成而引起的电气失效。
这个目标可以通过使用银环氧树脂粘合剂将半导体芯片连接到导体构架的芯片垫片上的一个改进的方法来实现,这个改进的方法包括以下步骤:
将粘合剂分送到芯片垫片上;
通过喷入一种气体来减小分送到芯片垫片上的粘合剂的粘滞度,从而避免了环氧树脂尾部的形成;以及
将芯片置入粘和剂并且在其中安置好芯片,使芯片与芯片垫片连接好。
进一步地,本发明的其它目标有提供改进的芯片连接,特征在于,温度是从50℃到70℃的空气或氢气进入被分送的粘合剂来实时地降低粘合剂的粘滞度。
本发明的这些和各种其它特点和优点将参照以下的详细描述及附图容易地得到理解,相类似的参考标号表示相类似的结构单元,其中:
图1是使用银环氧树脂进行芯片连接的常规的涂敷设备的一个部分的示意图。
图2表示了银环氧树脂随温度的变化。
图3是根据本发明的使用银环氧树脂的芯片连接工艺的一个示意图。
图4A至图4C是根据本发明的银环氧树脂的涂敷的示意图。
现在参照附图来对本发明进行详细的描述。
图3是根据本发明的使用银环氧树脂的芯片连接工艺的一个示意图。用于分送银环氧树脂粘合剂(“点一分送器”)的设备(18)包括一个装有银环氧树脂粘合剂的注射管(17)和一个以一个特定的量分送粘合剂到各点的点标器(19)(dotter)。点分送器(dot-dispenser)(18)被置于导线构架(14)的芯片垫片(16)之上并且将银环氧树脂粘合剂的各点分送到芯片垫片(16)之上。同时,温度是从50℃到70℃的热空气通过一个吹风机(10)被吹到从点标器(19)达到芯片垫片上的银环氧树脂粘合剂之中,使得粘和剂的粘滞度瞬时地减小到大约30泊或更小(poise,泊(粘度单位)),从而防止了环氧树脂尾部的形成。
虽然图3描述的是空气只从一个方向吹的实施例,但是空气可以从两个或更多的方向吹,从而减小粘和剂的粘滞度。
温度在50℃至70℃的氮气可以取代空气来被使用。
图4A到图4C表示的是根据本发明的银环氧树脂粘和剂的各点的分送。点分配器(28)包括一个装有银环氧树脂粘合剂的注射管(30)和用于分送粘合剂的点的点标器(22)。点标器(22)配有多个喷嘴(24),这样可以有更高效率的粘合剂的点散布(dotting)。
首先,参照图4A,点分送器(28)被置于芯片垫片(26)之上。然后,参照图4B,点标器(22)被向下移动到接近芯片垫片(26)的一个表面。当给注射管(30)施加压力时,银环氧树脂被从喷嘴(24)分配到芯片垫片(26)之上。而且,温度在50℃至70℃的空气或氮气被吹到从喷嘴喷向芯片垫片的银环氧树脂粘合剂来即刻地减小粘合剂的粘滞度,从而能够有效地避免环氧树脂尾部的形成。
如上所述,最终导致在导线上的环氧树脂或产生使芯片失效的环氧树脂的环氧树脂尾部的形成,可以通过在芯片连接过程中向从涂敷设备向芯片垫片上进行点分散的粘合剂吹送热空气或氮气来有效地加以避免。
虽然本发明的优先的实施例已经在以上被详细地加以描述,应该明白,对于本技术熟悉的人来说,在此教给的本发明的概念的许多变更与修改仍然在所附的权利要求中所定义的本发明的精神与范围之中。

Claims (6)

1.一个使用环氧树脂粘合剂将半导体芯片连接到导线构架的芯片垫片上的改进的方法,包括以下步骤:
将粘合剂分送到芯片垫片上;
通过吹送气体来减小分送到芯片垫片上的粘合剂的粘滞度,从而避免形成环氧树脂的尾部;并且
将芯片置入粘合剂并且在该处放置芯片,把芯片与芯片垫片连接。
2.权利要求1的方法,特征在于所说的气体是空气或氮气。
3.权利要求1的方法,特征在于温度处于50℃到70℃的所说的气体吹向来自分配器的处于分配器与芯片垫片之间的环氧树脂粘和剂从而瞬时地减小了环氧树脂粘合剂的粘滞度。
4.权利要求3的方法,特征在于所说的空气从至少一个方向吹向环氧树脂粘合剂。
5.权利要求3的方法,特征在于所说的环氧树脂粘合剂是填充了银的环氧树脂胶(epoxy resin)。
6.权利要求3的方法,所说的环氧树脂粘合剂通过点分散到.芯片垫片的上表面而被分送。
CN96100609A 1995-10-17 1996-01-04 管芯连接的一种改进方法 Expired - Fee Related CN1078385C (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104981336A (zh) * 2013-01-11 2015-10-14 泽菲罗斯公司 在基板上挤制材料带的方法和设备

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3992893B2 (ja) * 1999-12-02 2007-10-17 富士通株式会社 半導体装置のアンダーフィル方法
US7086860B2 (en) * 2002-02-20 2006-08-08 Schuman Walter F Implant placement system
JP4200758B2 (ja) * 2002-12-26 2008-12-24 株式会社日立ハイテクノロジーズ パネルの樹脂塗布方法、ディスプレイ用パネルの製造方法及び樹脂塗布装置
KR100506035B1 (ko) * 2003-08-22 2005-08-03 삼성전자주식회사 반도체 패키지 및 그 제조방법
JP4426917B2 (ja) * 2004-07-16 2010-03-03 株式会社ルネサステクノロジ 半導体装置の製造方法
KR101038493B1 (ko) * 2004-11-12 2011-06-01 삼성테크윈 주식회사 극초단파용 라디오 주파수 인식태그 제조방법
US20080073028A1 (en) * 2006-08-31 2008-03-27 Frank Yu Methods and apparatus to dispense adhesive for semiconductor packaging
KR101695282B1 (ko) * 2010-07-14 2017-01-11 주식회사 탑 엔지니어링 반도체패키지 제조용 수지도포장치
CN103229609B (zh) * 2010-09-28 2016-12-21 乔治亚技术研究公司 第二级互连结构及其制造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE28731T1 (de) * 1984-02-29 1987-08-15 Steinel Gmbh & Co Kg Heissklebepistole.
US4778642A (en) * 1986-06-17 1988-10-18 Robotic Vision Systems, Inc. Sealant bead profile control
JPS63244744A (ja) * 1987-03-31 1988-10-12 Sony Corp 粘性材料の塗布方法とその装置
JPH04171969A (ja) * 1990-11-06 1992-06-19 Fujitsu Ltd 実装icチップ樹脂封止構造及び樹脂封止方法
JPH06333763A (ja) * 1993-05-24 1994-12-02 Tokyo Electric Co Ltd 放電灯安定器
US5423889A (en) * 1994-06-24 1995-06-13 Harris Corporation Process for manufacturing a multi-port adhesive dispensing tool

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104981336A (zh) * 2013-01-11 2015-10-14 泽菲罗斯公司 在基板上挤制材料带的方法和设备
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