KR0150470B1 - 기체상 유기금속 화합물의 정제방법 - Google Patents

기체상 유기금속 화합물의 정제방법 Download PDF

Info

Publication number
KR0150470B1
KR0150470B1 KR1019920012699A KR920012699A KR0150470B1 KR 0150470 B1 KR0150470 B1 KR 0150470B1 KR 1019920012699 A KR1019920012699 A KR 1019920012699A KR 920012699 A KR920012699 A KR 920012699A KR 0150470 B1 KR0150470 B1 KR 0150470B1
Authority
KR
South Korea
Prior art keywords
organometallic compound
purifying
catalyst
gaseous organometallic
nickel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019920012699A
Other languages
English (en)
Korean (ko)
Other versions
KR930002360A (ko
Inventor
다까시 시마다
게이이찌 이와따
마사꼬 야스다
Original Assignee
야마자끼 료이찌
니혼 파이오닉스 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 야마자끼 료이찌, 니혼 파이오닉스 가부시끼가이샤 filed Critical 야마자끼 료이찌
Publication of KR930002360A publication Critical patent/KR930002360A/ko
Application granted granted Critical
Publication of KR0150470B1 publication Critical patent/KR0150470B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C07F5/06Aluminium compounds
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4402Reduction of impurities in the source gas
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D53/00Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/02Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F3/00Compounds containing elements of Groups 2 or 12 of the Periodic Table
    • C07F3/06Zinc compounds
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C07F5/06Aluminium compounds
    • C07F5/061Aluminium compounds with C-aluminium linkage
    • C07F5/062Al linked exclusively to C
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Analytical Chemistry (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Catalysts (AREA)
KR1019920012699A 1991-07-17 1992-07-16 기체상 유기금속 화합물의 정제방법 Expired - Fee Related KR0150470B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP26812291 1991-07-17
JP26812191 1991-07-17
JP91-268121 1991-07-17
JP91-268122 1991-07-17

Publications (2)

Publication Number Publication Date
KR930002360A KR930002360A (ko) 1993-02-23
KR0150470B1 true KR0150470B1 (ko) 1998-10-15

Family

ID=26548176

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920012699A Expired - Fee Related KR0150470B1 (ko) 1991-07-17 1992-07-16 기체상 유기금속 화합물의 정제방법

Country Status (5)

Country Link
US (1) US5470555A (OSRAM)
EP (1) EP0523525B1 (OSRAM)
KR (1) KR0150470B1 (OSRAM)
DE (1) DE69202014T2 (OSRAM)
TW (1) TW260620B (OSRAM)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5455364A (en) * 1993-12-14 1995-10-03 Sumitomo Chemical Company, Ltd. Process for removing an impurity in organometallic compound
DE1001049T1 (de) * 1998-11-13 2000-11-02 Epichem Ltd., Wirral Verfahren zur Reinigung von organometallischen Verbindungen
US6447576B1 (en) * 1999-10-29 2002-09-10 Japan Pionics Co., Ltd. Cleaning agent and cleaning process of harmful gas
TW510820B (en) * 1999-11-30 2002-11-21 Japan Pionics Method of cleaning of harmful gas and cleaning apparatus
JP4073146B2 (ja) * 2000-03-17 2008-04-09 株式会社高純度化学研究所 ガリウムアルコキシドの精製方法
AU5255001A (en) * 2000-04-19 2001-10-30 Saes Getters S.P.A. A process for the purification of organometallic compounds or heteroatomic organic compounds with a palladium-based catalyst
TW550307B (en) * 2000-04-19 2003-09-01 Getters Spa A process for the purification of organometallic compounds or heteroatomic organic compounds with hydrogenated getter alloys
WO2001079586A1 (en) * 2000-04-19 2001-10-25 Saes Getters S.P.A. A process for the purification of organometallic compounds or heteroatomic organic compounds with a catalyst based on iron and manganese supported on zeolites
US6911065B2 (en) * 2002-12-26 2005-06-28 Matheson Tri-Gas, Inc. Method and system for supplying high purity fluid
GB2432364B (en) * 2005-11-18 2009-11-11 Rohm & Haas Elect Mat Organometallic compound purification
SG10201702197PA (en) 2012-02-10 2017-04-27 Entegris Inc Gas purifier
WO2014105272A1 (en) * 2012-12-31 2014-07-03 Albemarle Corporation Oxygenate removal from organometallic compounds

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2144497A (en) * 1935-11-21 1939-01-17 Westinghouse Electric & Mfg Co Process for freeing gas of oxygen
US2351167A (en) * 1941-10-04 1944-06-13 Du Pont Removal of oxygen from normally gaseous olefins
US3852406A (en) * 1967-06-20 1974-12-03 Messer Griesheim Gmbh Method of removing oxygen from gases
JPS506440A (OSRAM) * 1973-05-17 1975-01-23
US4034062A (en) * 1975-03-20 1977-07-05 Borden, Inc. Removal of oxygen from gas stream with copper catalyst
JPS60209249A (ja) * 1984-04-02 1985-10-21 Olympus Optical Co Ltd 工業用原料ガスの純化剤,その製造方法およびその使用方法
US4713224A (en) * 1986-03-31 1987-12-15 The Boc Group, Inc. One-step process for purifying an inert gas
DE3618942A1 (de) * 1986-06-05 1987-12-10 Messer Griesheim Gmbh Masse zur entfernung durch chemiesorption von homogen geloesten beimengungen, insbesondere sauerstoff, aus gasen oder fluessigkeiten
US4772296A (en) * 1987-05-12 1988-09-20 Eagle-Picher Industries, Inc. Method of purifying and depositing group IIIa and group Va compounds to produce epitaxial films
KR960010082B1 (ko) * 1988-09-26 1996-07-25 니혼 파이오닉스 가부시끼가이샤 기체성 수소화물의 정제방법
JP2732262B2 (ja) * 1988-09-26 1998-03-25 日本パイオニクス株式会社 アルシンの精製方法
JP2700412B2 (ja) * 1989-06-08 1998-01-21 日本パイオニクス株式会社 水素化物ガスの精製方法
US5356672A (en) * 1990-05-09 1994-10-18 Jet Process Corporation Method for microwave plasma assisted supersonic gas jet deposition of thin films
JPH04318920A (ja) * 1991-04-17 1992-11-10 Mitsubishi Electric Corp 気相結晶成長装置

Also Published As

Publication number Publication date
US5470555A (en) 1995-11-28
TW260620B (OSRAM) 1995-10-21
EP0523525B1 (en) 1995-04-12
EP0523525A1 (en) 1993-01-20
DE69202014D1 (de) 1995-05-18
DE69202014T2 (de) 1995-08-31
KR930002360A (ko) 1993-02-23

Similar Documents

Publication Publication Date Title
KR0150470B1 (ko) 기체상 유기금속 화합물의 정제방법
US4976942A (en) Method for purifying gaseous hydrides
JP2732262B2 (ja) アルシンの精製方法
JP3217854B2 (ja) 有機金属の精製方法
JP3410121B2 (ja) アンモニアの精製方法
JP3522785B2 (ja) 二酸化炭素の精製方法
JP2651611B2 (ja) 水素化物ガスの精製方法
JP3154340B2 (ja) 水素化ゲルマニウムの精製方法
JP2640517B2 (ja) セレン化水素の精製方法
JP2640521B2 (ja) 硫化水素の精製方法
JP3154339B2 (ja) 水素化ゲルマニウムの精製方法
JPH05124813A (ja) アンモニアの精製方法
JP3292251B2 (ja) 水蒸気の精製方法
JP2700412B2 (ja) 水素化物ガスの精製方法
KR0148367B1 (ko) 기체 수소화물의 정제 방법
JP3260786B2 (ja) 水蒸気の精製方法
JP2700396B2 (ja) ジボランの精製方法
JP2700399B2 (ja) 水素化物ガスの精製方法
JP2592312B2 (ja) ホスフィンの精製方法
JP2627324B2 (ja) シランの精製方法
JP2700398B2 (ja) 水素化物ガスの精製方法
JP2700401B2 (ja) 水素化物ガスの精製方法
JP2700402B2 (ja) 水素化物ガスの精製方法
JPH02188409A (ja) 水素化物ガスの精製方法
JPH04144910A (ja) ジシランの精製方法

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20020514

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20030616

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20030616