KR0142107B1 - Method of forming electric circuit using anodic oxidation - Google Patents

Method of forming electric circuit using anodic oxidation

Info

Publication number
KR0142107B1
KR0142107B1 KR97015859A KR19970015859A KR0142107B1 KR 0142107 B1 KR0142107 B1 KR 0142107B1 KR 97015859 A KR97015859 A KR 97015859A KR 19970015859 A KR19970015859 A KR 19970015859A KR 0142107 B1 KR0142107 B1 KR 0142107B1
Authority
KR
South Korea
Prior art keywords
electric circuit
anodic oxidation
forming electric
forming
anodic
Prior art date
Application number
KR97015859A
Other languages
English (en)
Inventor
Hongyong Zhang
Hideki Uochi
Hiroki Adachi
Itaru Koyama
Shunpei Yamazaki
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP28235292A external-priority patent/JP3150792B2/ja
Priority claimed from JP36019292A external-priority patent/JP3121944B2/ja
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Application granted granted Critical
Publication of KR0142107B1 publication Critical patent/KR0142107B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823475—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type interconnection or wiring or contact manufacturing related aspects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28079—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/911—Differential oxidation and etching
KR97015859A 1992-05-09 1997-04-28 Method of forming electric circuit using anodic oxidation KR0142107B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP14331992 1992-05-09
JP28235292A JP3150792B2 (ja) 1992-05-09 1992-09-28 電子回路の作製方法
JP36019292A JP3121944B2 (ja) 1992-05-09 1992-12-28 電子回路の作製方法

Publications (1)

Publication Number Publication Date
KR0142107B1 true KR0142107B1 (en) 1998-07-15

Family

ID=27318616

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1019930007911A KR0119467B1 (ko) 1992-05-09 1993-05-08 전자회로
KR97015859A KR0142107B1 (en) 1992-05-09 1997-04-28 Method of forming electric circuit using anodic oxidation

Family Applications Before (1)

Application Number Title Priority Date Filing Date
KR1019930007911A KR0119467B1 (ko) 1992-05-09 1993-05-08 전자회로

Country Status (3)

Country Link
US (3) US5576225A (ko)
KR (2) KR0119467B1 (ko)
CN (1) CN1115722C (ko)

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US5468987A (en) * 1991-03-06 1995-11-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
KR960001611B1 (ko) 1991-03-06 1996-02-02 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 절연 게이트형 전계 효과 반도체 장치 및 그 제작방법
US6624450B1 (en) 1992-03-27 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US5576225A (en) * 1992-05-09 1996-11-19 Semiconductor Energy Laboratory Co., Ltd. Method of forming electric circuit using anodic oxidation
US6624477B1 (en) 1992-10-09 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TW232751B (en) * 1992-10-09 1994-10-21 Semiconductor Energy Res Co Ltd Semiconductor device and method for forming the same
JPH0730125A (ja) * 1993-07-07 1995-01-31 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JPH08250743A (ja) * 1995-03-07 1996-09-27 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JPH08250746A (ja) * 1995-03-13 1996-09-27 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US5866444A (en) * 1995-03-21 1999-02-02 Semiconductor Energy Laboratory Co. Integrated circuit and method of fabricating the same
JP3474309B2 (ja) * 1995-03-24 2003-12-08 株式会社半導体エネルギー研究所 アクティブマトリクス型の液晶表示装置の作製方法
JP3176253B2 (ja) * 1995-05-25 2001-06-11 シャープ株式会社 回路基板
JP3299888B2 (ja) * 1996-07-10 2002-07-08 富士通株式会社 プラズマディスプレイパネル及びその製造方法
US6037713A (en) * 1996-11-25 2000-03-14 Fujitsu Limited Display panel having compound film covered electrodes
US6576069B1 (en) 1998-05-22 2003-06-10 Cabot Corporation Tantalum-silicon alloys and products containing the same and processes of making the same
EP1041641B1 (en) 1999-03-26 2015-11-04 Semiconductor Energy Laboratory Co., Ltd. A method for manufacturing an electrooptical device
JP4827276B2 (ja) 1999-07-05 2011-11-30 株式会社半導体エネルギー研究所 レーザー照射装置、レーザー照射方法及び半導体装置の作製方法
TW544727B (en) * 1999-08-13 2003-08-01 Semiconductor Energy Lab Method of manufacturing a semiconductor device
US6548370B1 (en) 1999-08-18 2003-04-15 Semiconductor Energy Laboratory Co., Ltd. Method of crystallizing a semiconductor layer by applying laser irradiation that vary in energy to its top and bottom surfaces
US7078321B2 (en) 2000-06-19 2006-07-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US6610612B2 (en) * 2000-12-13 2003-08-26 The University Of Maryland Method of efficient controllable and repeatable wet oxidation in a phosphorous-rich III-V material system
US6659331B2 (en) * 2002-02-26 2003-12-09 Applied Materials, Inc Plasma-resistant, welded aluminum structures for use in semiconductor apparatus
TWI266108B (en) * 2003-05-01 2006-11-11 Seiko Epson Corp Electrical wiring structure, manufacturing method of electrical c wiring structure, substrate for optical device having electrical wiring structure and electro-optical device, and method for manufacturing electro-optical device
US8461628B2 (en) * 2005-03-18 2013-06-11 Kovio, Inc. MOS transistor with laser-patterned metal gate, and method for making the same
US9165917B2 (en) * 2009-05-28 2015-10-20 Globalfoundries Inc. In-line stacking of transistors for soft error rate hardening
US8102033B2 (en) * 2009-05-28 2012-01-24 International Business Machines Corporation Reduced soft error rate through metal fill and placement

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US3775262A (en) * 1972-02-09 1973-11-27 Ncr Method of making insulated gate field effect transistor
GB2107115B (en) * 1981-07-17 1985-05-09 Citizen Watch Co Ltd Method of manufacturing insulated gate thin film effect transitors
FR2588418B1 (fr) * 1985-10-03 1988-07-29 Bull Sa Procede de formation d'un reseau metallique multicouche d'interconnexion des composants d'un circuit integre de haute densite et circuit integre en resultant
US5262336A (en) * 1986-03-21 1993-11-16 Advanced Power Technology, Inc. IGBT process to produce platinum lifetime control
KR920000077B1 (ko) * 1987-07-28 1992-01-06 가부시키가이샤 도시바 반도체장치의 제조방법
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JPH0690373B2 (ja) * 1987-11-19 1994-11-14 シャープ株式会社 アクティブマトリクス基板
US4960719A (en) * 1988-02-04 1990-10-02 Seikosha Co., Ltd. Method for producing amorphous silicon thin film transistor array substrate
GB2220792B (en) * 1988-07-13 1991-12-18 Seikosha Kk Silicon thin film transistor and method for producing the same
JP3009438B2 (ja) * 1989-08-14 2000-02-14 株式会社日立製作所 液晶表示装置
ATE139866T1 (de) * 1990-02-19 1996-07-15 Canon Kk Verfahren zum herstellen von abgeschiedener metallschicht, die aluminium als hauptkomponente enthält, mit anwendung von alkylaluminiumhydrid
JPH04107831A (ja) * 1990-08-27 1992-04-09 Sharp Corp 半導体装置の製造方法
KR960001611B1 (ko) * 1991-03-06 1996-02-02 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 절연 게이트형 전계 효과 반도체 장치 및 그 제작방법
JPH0824104B2 (ja) * 1991-03-18 1996-03-06 株式会社半導体エネルギー研究所 半導体材料およびその作製方法
US5202274A (en) * 1991-06-14 1993-04-13 Samsung Electronics Co., Ltd. Method of fabricating thin film transistor
KR930005549B1 (ko) * 1991-06-17 1993-06-23 삼성전자 주식회사 표시패널 및 그의 제조방법
US5576225A (en) * 1992-05-09 1996-11-19 Semiconductor Energy Laboratory Co., Ltd. Method of forming electric circuit using anodic oxidation

Also Published As

Publication number Publication date
US5677559A (en) 1997-10-14
KR0119467B1 (ko) 1997-10-17
US5576225A (en) 1996-11-19
CN1115722C (zh) 2003-07-23
KR930024138A (ko) 1993-12-22
CN1145533A (zh) 1997-03-19
US5972742A (en) 1999-10-26

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