KR0136684B1 - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- KR0136684B1 KR0136684B1 KR94011528A KR19940011528A KR0136684B1 KR 0136684 B1 KR0136684 B1 KR 0136684B1 KR 94011528 A KR94011528 A KR 94011528A KR 19940011528 A KR19940011528 A KR 19940011528A KR 0136684 B1 KR0136684 B1 KR 0136684B1
- Authority
- KR
- South Korea
- Prior art keywords
- manufacture
- semiconductor device
- semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76805—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics the opening being a via or contact hole penetrating the underlying conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13033993 | 1993-06-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR0136684B1 true KR0136684B1 (en) | 1998-04-29 |
Family
ID=15032019
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR94011528A KR0136684B1 (en) | 1993-06-01 | 1994-05-26 | Semiconductor device and manufacture thereof |
Country Status (2)
Country | Link |
---|---|
US (2) | US5760429A (ko) |
KR (1) | KR0136684B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150141777A (ko) * | 2014-06-10 | 2015-12-21 | 삼성전자주식회사 | 논리 셀 및 이를 포함하는 집적회로 소자와 논리 셀의 제조 방법 및 집적회로 소자의 제조 방법 |
Families Citing this family (54)
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US6744091B1 (en) * | 1995-01-31 | 2004-06-01 | Fujitsu Limited | Semiconductor storage device with self-aligned opening and method for fabricating the same |
JPH09172072A (ja) * | 1995-12-18 | 1997-06-30 | Nec Corp | 半導体装置及びその製造方法 |
US5972788A (en) * | 1996-05-22 | 1999-10-26 | International Business Machines Corporation | Method of making flexible interconnections with dual-metal-dual-stud structure |
US5846876A (en) * | 1996-06-05 | 1998-12-08 | Advanced Micro Devices, Inc. | Integrated circuit which uses a damascene process for producing staggered interconnect lines |
US5953626A (en) * | 1996-06-05 | 1999-09-14 | Advanced Micro Devices, Inc. | Dissolvable dielectric method |
JP3941133B2 (ja) * | 1996-07-18 | 2007-07-04 | 富士通株式会社 | 半導体装置およびその製造方法 |
JPH10163315A (ja) * | 1996-11-28 | 1998-06-19 | Nec Ic Microcomput Syst Ltd | 半導体回路装置 |
JP2924832B2 (ja) * | 1996-11-28 | 1999-07-26 | 日本電気株式会社 | 半導体装置の製造方法 |
US6121129A (en) * | 1997-01-15 | 2000-09-19 | International Business Machines Corporation | Method of contact structure formation |
US5985766A (en) * | 1997-02-27 | 1999-11-16 | Micron Technology, Inc. | Semiconductor processing methods of forming a contact opening |
KR100255591B1 (ko) | 1997-03-06 | 2000-05-01 | 구본준 | 박막 트랜지스터 어레이의 배선 연결 구조 및 그 제조 방법 |
US6060330A (en) * | 1997-03-24 | 2000-05-09 | Clear Logic, Inc. | Method of customizing integrated circuits by selective secondary deposition of interconnect material |
US5917197A (en) * | 1997-05-21 | 1999-06-29 | Siemens Aktiengesellschaft | Integrated multi-layer test pads |
US6046503A (en) * | 1997-09-26 | 2000-04-04 | Siemens Aktiengesellschaft | Metalization system having an enhanced thermal conductivity |
US5994780A (en) | 1997-12-16 | 1999-11-30 | Advanced Micro Devices, Inc. | Semiconductor device with multiple contact sizes |
US6245664B1 (en) * | 1998-01-05 | 2001-06-12 | Texas Instruments Incorporated | Method and system of interconnecting conductive elements in an integrated circuit |
KR100278010B1 (ko) * | 1998-01-07 | 2001-01-15 | 윤종용 | 절연층에서의균열발생이방지된반도체소자및균열방지방법 |
US6081032A (en) * | 1998-02-13 | 2000-06-27 | Texas Instruments - Acer Incorporated | Dual damascene multi-level metallization and interconnection structure |
US6727170B2 (en) * | 1998-02-16 | 2004-04-27 | Renesas Technology Corp. | Semiconductor device having an improved interlayer conductor connections and a manufacturing method thereof |
JP3515363B2 (ja) * | 1998-03-24 | 2004-04-05 | 株式会社東芝 | 半導体装置の製造方法 |
DE69828968D1 (de) | 1998-09-25 | 2005-03-17 | St Microelectronics Srl | Verbindungsstruktur in mehreren Ebenen |
JP3230667B2 (ja) * | 1998-11-17 | 2001-11-19 | 日本電気株式会社 | 半導体装置の配線構造 |
US6965165B2 (en) * | 1998-12-21 | 2005-11-15 | Mou-Shiung Lin | Top layers of metal for high performance IC's |
US6861670B1 (en) * | 1999-04-01 | 2005-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having multi-layer wiring |
JP3376965B2 (ja) * | 1999-07-13 | 2003-02-17 | 日本電気株式会社 | 半導体装置及びその製造方法 |
TW515073B (en) * | 1999-11-15 | 2002-12-21 | Winbond Electronics Corp | Method for generating virtual metal pattern layer |
US7312141B2 (en) * | 2000-09-26 | 2007-12-25 | International Business Machines Corporation | Shapes-based migration of aluminum designs to copper damascene |
US6528883B1 (en) | 2000-09-26 | 2003-03-04 | International Business Machines Corporation | Shapes-based migration of aluminum designs to copper damascene |
TW490839B (en) * | 2001-05-15 | 2002-06-11 | Via Tech Inc | Conducting wire layer structure |
JP2003031657A (ja) * | 2001-07-18 | 2003-01-31 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
WO2003023847A2 (en) * | 2001-09-13 | 2003-03-20 | Koninklijke Philips Electronics N.V. | Integrated circuit, portable device and method for manufacturing an integrated circuit |
JP3875568B2 (ja) * | 2002-02-05 | 2007-01-31 | 株式会社東芝 | 半導体装置及びその製造方法 |
DE10305365B4 (de) * | 2003-02-10 | 2005-02-10 | Infineon Technologies Ag | Verfahren und Anordnung zum Kontaktieren von Anschlüssen eines Bipolartransistors |
KR100545865B1 (ko) * | 2003-06-25 | 2006-01-24 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
US7188321B2 (en) * | 2003-11-06 | 2007-03-06 | International Business Machines Corporation | Generation of metal holes by via mutation |
KR100652409B1 (ko) * | 2005-05-06 | 2006-12-01 | 삼성전자주식회사 | 콘택이 구비된 반도체소자 및 그 제조방법 |
KR100817174B1 (ko) * | 2005-06-21 | 2008-03-27 | 세향산업 주식회사 | 다층박막 캐패시터와 그 제조방법 및 장치 |
KR100675303B1 (ko) * | 2006-01-23 | 2007-01-29 | 삼성전자주식회사 | 자기정렬 콘택을 갖는 반도체소자 및 그 형성방법 |
US20080217755A1 (en) * | 2007-03-09 | 2008-09-11 | Satoru Takase | Systems and Methods for Providing Voltage Compensation in an Integrated Circuit Chip Using a Divided Power Plane |
JP2008270277A (ja) * | 2007-04-16 | 2008-11-06 | Nec Electronics Corp | 位置ずれ検出パターン、位置ずれ検出方法および半導体装置 |
JP2009037115A (ja) * | 2007-08-03 | 2009-02-19 | Sony Corp | 半導体装置およびその製造方法、並びに表示装置 |
JP2009111013A (ja) * | 2007-10-26 | 2009-05-21 | Rohm Co Ltd | 半導体装置 |
JP5175526B2 (ja) | 2007-11-22 | 2013-04-03 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
US7928577B2 (en) | 2008-07-16 | 2011-04-19 | Micron Technology, Inc. | Interconnect structures for integration of multi-layered integrated circuit devices and methods for forming the same |
US9293366B2 (en) | 2010-04-28 | 2016-03-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Through-substrate vias with improved connections |
JP2012216643A (ja) * | 2011-03-31 | 2012-11-08 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
TWI551207B (zh) * | 2014-09-12 | 2016-09-21 | 矽品精密工業股份有限公司 | 基板結構及其製法 |
US10777510B2 (en) | 2016-11-28 | 2020-09-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device including dummy via anchored to dummy metal layer |
US10559594B2 (en) * | 2017-04-11 | 2020-02-11 | Ahmad Tarakji | Approach to the manufacturing of monolithic 3-dimensional high-rise integrated-circuits with vertically-stacked double-sided fully-depleted silicon-on-insulator transistors |
TWI619057B (zh) * | 2017-06-01 | 2018-03-21 | 友達光電股份有限公司 | 顯示元件 |
US10410934B2 (en) * | 2017-12-07 | 2019-09-10 | Micron Technology, Inc. | Apparatuses having an interconnect extending from an upper conductive structure, through a hole in another conductive structure, and to an underlying structure |
US10537019B1 (en) * | 2019-06-27 | 2020-01-14 | Nxp Usa, Inc. | Substrate dielectric crack prevention using interleaved metal plane |
US11600519B2 (en) * | 2019-09-16 | 2023-03-07 | International Business Machines Corporation | Skip-via proximity interconnect |
US12119261B2 (en) | 2022-04-04 | 2024-10-15 | Winbond Electronics Corp. | Semiconductor structure and manufacturing method of the same |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3323198A (en) * | 1965-01-27 | 1967-06-06 | Texas Instruments Inc | Electrical interconnections |
JPH0612799B2 (ja) * | 1986-03-03 | 1994-02-16 | 三菱電機株式会社 | 積層型半導体装置およびその製造方法 |
US4840923A (en) * | 1986-04-30 | 1989-06-20 | International Business Machine Corporation | Simultaneous multiple level interconnection process |
JPS63260054A (ja) * | 1987-04-16 | 1988-10-27 | Nec Corp | 半導体集積回路装置 |
US4872050A (en) * | 1988-03-15 | 1989-10-03 | Mitsubishi Denki Kabushiki Kaisha | Interconnection structure in semiconductor device and manufacturing method of the same |
JPH0239647A (ja) * | 1988-07-28 | 1990-02-08 | Nec Software Ltd | 電子メール受発信閉域保護装置 |
US5191405A (en) * | 1988-12-23 | 1993-03-02 | Matsushita Electric Industrial Co., Ltd. | Three-dimensional stacked lsi |
JPH02189953A (ja) * | 1989-01-18 | 1990-07-25 | Mitsubishi Electric Corp | 半導体集積回路装置 |
FR2642902B1 (fr) * | 1989-02-03 | 1991-05-17 | Telemecanique | Composant semi-conducteur de puissance cellulaire |
JPH04188753A (ja) * | 1990-11-22 | 1992-07-07 | Hitachi Ltd | 多層配線半導体装置 |
JPH0569308A (ja) * | 1991-09-12 | 1993-03-23 | Tipton Mfg Corp | バレル研磨用芳香コンパウンド及び芳香剤入りバレル研磨法 |
US5262352A (en) * | 1992-08-31 | 1993-11-16 | Motorola, Inc. | Method for forming an interconnection structure for conductive layers |
-
1994
- 1994-05-26 KR KR94011528A patent/KR0136684B1/ko not_active IP Right Cessation
-
1997
- 1997-02-18 US US08/834,303 patent/US5760429A/en not_active Expired - Fee Related
-
1998
- 1998-02-17 US US09/024,456 patent/US6022804A/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150141777A (ko) * | 2014-06-10 | 2015-12-21 | 삼성전자주식회사 | 논리 셀 및 이를 포함하는 집적회로 소자와 논리 셀의 제조 방법 및 집적회로 소자의 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
US6022804A (en) | 2000-02-08 |
US5760429A (en) | 1998-06-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20090123 Year of fee payment: 12 |
|
LAPS | Lapse due to unpaid annual fee |