JPWO2025018161A5 - - Google Patents

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Publication number
JPWO2025018161A5
JPWO2025018161A5 JP2025533961A JP2025533961A JPWO2025018161A5 JP WO2025018161 A5 JPWO2025018161 A5 JP WO2025018161A5 JP 2025533961 A JP2025533961 A JP 2025533961A JP 2025533961 A JP2025533961 A JP 2025533961A JP WO2025018161 A5 JPWO2025018161 A5 JP WO2025018161A5
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JP
Japan
Prior art keywords
gas
etching method
appendix
substrate support
etching
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Application number
JP2025533961A
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English (en)
Japanese (ja)
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JP7852163B2 (ja
JPWO2025018161A1 (https=
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Priority claimed from PCT/JP2024/024216 external-priority patent/WO2025018161A1/ja
Publication of JPWO2025018161A1 publication Critical patent/JPWO2025018161A1/ja
Publication of JPWO2025018161A5 publication Critical patent/JPWO2025018161A5/ja
Application granted granted Critical
Publication of JP7852163B2 publication Critical patent/JP7852163B2/ja
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Anticipated expiration legal-status Critical

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JP2025533961A 2023-07-18 2024-07-04 エッチング方法及びエッチング装置 Active JP7852163B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023117004 2023-07-18
JP2023117004 2023-07-18
PCT/JP2024/024216 WO2025018161A1 (ja) 2023-07-18 2024-07-04 エッチング方法及びエッチング装置

Publications (3)

Publication Number Publication Date
JPWO2025018161A1 JPWO2025018161A1 (https=) 2025-01-23
JPWO2025018161A5 true JPWO2025018161A5 (https=) 2026-03-05
JP7852163B2 JP7852163B2 (ja) 2026-04-27

Family

ID=94281496

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025533961A Active JP7852163B2 (ja) 2023-07-18 2024-07-04 エッチング方法及びエッチング装置

Country Status (5)

Country Link
JP (1) JP7852163B2 (https=)
KR (1) KR20260040018A (https=)
CN (1) CN121533184A (https=)
TW (1) TW202507839A (https=)
WO (1) WO2025018161A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7333752B2 (ja) * 2019-12-25 2023-08-25 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP7650674B2 (ja) * 2021-01-29 2025-03-25 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP7325160B2 (ja) * 2021-05-06 2023-08-14 東京エレクトロン株式会社 エッチング方法及びプラズマ処理システム
US20240120209A1 (en) * 2021-06-17 2024-04-11 Lam Research Corporation Systems and methods for etching a high aspect ratio structure
JP7348672B2 (ja) * 2021-12-03 2023-09-21 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム
KR20240121327A (ko) * 2021-12-28 2024-08-08 도쿄엘렉트론가부시키가이샤 에칭 방법 및 플라즈마 처리 장치

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