KR20260040018A - 에칭 방법 및 에칭 장치 - Google Patents
에칭 방법 및 에칭 장치Info
- Publication number
- KR20260040018A KR20260040018A KR1020267003663A KR20267003663A KR20260040018A KR 20260040018 A KR20260040018 A KR 20260040018A KR 1020267003663 A KR1020267003663 A KR 1020267003663A KR 20267003663 A KR20267003663 A KR 20267003663A KR 20260040018 A KR20260040018 A KR 20260040018A
- Authority
- KR
- South Korea
- Prior art keywords
- gas
- etching
- treatment
- film
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
- H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
Landscapes
- Drying Of Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2023-117004 | 2023-07-18 | ||
| JP2023117004 | 2023-07-18 | ||
| PCT/JP2024/024216 WO2025018161A1 (ja) | 2023-07-18 | 2024-07-04 | エッチング方法及びエッチング装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20260040018A true KR20260040018A (ko) | 2026-03-23 |
Family
ID=94281496
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020267003663A Pending KR20260040018A (ko) | 2023-07-18 | 2024-07-04 | 에칭 방법 및 에칭 장치 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP7852163B2 (https=) |
| KR (1) | KR20260040018A (https=) |
| CN (1) | CN121533184A (https=) |
| TW (1) | TW202507839A (https=) |
| WO (1) | WO2025018161A1 (https=) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7333752B2 (ja) * | 2019-12-25 | 2023-08-25 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
| JP7650674B2 (ja) * | 2021-01-29 | 2025-03-25 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
| JP7325160B2 (ja) * | 2021-05-06 | 2023-08-14 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理システム |
| US20240120209A1 (en) * | 2021-06-17 | 2024-04-11 | Lam Research Corporation | Systems and methods for etching a high aspect ratio structure |
| JP7348672B2 (ja) * | 2021-12-03 | 2023-09-21 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理システム |
| KR20240121327A (ko) * | 2021-12-28 | 2024-08-08 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 및 플라즈마 처리 장치 |
-
2024
- 2024-07-04 JP JP2025533961A patent/JP7852163B2/ja active Active
- 2024-07-04 CN CN202480045984.7A patent/CN121533184A/zh active Pending
- 2024-07-04 WO PCT/JP2024/024216 patent/WO2025018161A1/ja active Pending
- 2024-07-04 KR KR1020267003663A patent/KR20260040018A/ko active Pending
- 2024-07-08 TW TW113125453A patent/TW202507839A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN121533184A (zh) | 2026-02-13 |
| TW202507839A (zh) | 2025-02-16 |
| WO2025018161A1 (ja) | 2025-01-23 |
| JP7852163B2 (ja) | 2026-04-27 |
| JPWO2025018161A1 (https=) | 2025-01-23 |
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| US20230402289A1 (en) | Etching method and plasma processing system | |
| WO2023238903A1 (ja) | エッチング方法およびプラズマ処理装置 | |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| Q12 | Application published |
Free format text: ST27 STATUS EVENT CODE: A-1-1-Q10-Q12-NAP-PG1501 (AS PROVIDED BY THE NATIONAL OFFICE) |