JPWO2025018161A1 - - Google Patents

Info

Publication number
JPWO2025018161A1
JPWO2025018161A1 JP2025533961A JP2025533961A JPWO2025018161A1 JP WO2025018161 A1 JPWO2025018161 A1 JP WO2025018161A1 JP 2025533961 A JP2025533961 A JP 2025533961A JP 2025533961 A JP2025533961 A JP 2025533961A JP WO2025018161 A1 JPWO2025018161 A1 JP WO2025018161A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2025533961A
Other languages
Japanese (ja)
Other versions
JPWO2025018161A5 (https=
JP7852163B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2025018161A1 publication Critical patent/JPWO2025018161A1/ja
Publication of JPWO2025018161A5 publication Critical patent/JPWO2025018161A5/ja
Application granted granted Critical
Publication of JP7852163B2 publication Critical patent/JP7852163B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
JP2025533961A 2023-07-18 2024-07-04 エッチング方法及びエッチング装置 Active JP7852163B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023117004 2023-07-18
JP2023117004 2023-07-18
PCT/JP2024/024216 WO2025018161A1 (ja) 2023-07-18 2024-07-04 エッチング方法及びエッチング装置

Publications (3)

Publication Number Publication Date
JPWO2025018161A1 true JPWO2025018161A1 (https=) 2025-01-23
JPWO2025018161A5 JPWO2025018161A5 (https=) 2026-03-05
JP7852163B2 JP7852163B2 (ja) 2026-04-27

Family

ID=94281496

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025533961A Active JP7852163B2 (ja) 2023-07-18 2024-07-04 エッチング方法及びエッチング装置

Country Status (5)

Country Link
JP (1) JP7852163B2 (https=)
KR (1) KR20260040018A (https=)
CN (1) CN121533184A (https=)
TW (1) TW202507839A (https=)
WO (1) WO2025018161A1 (https=)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021103710A (ja) * 2019-12-25 2021-07-15 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP2022116742A (ja) * 2021-01-29 2022-08-10 東京エレクトロン株式会社 基板処理方法および基板処理装置
WO2022234805A1 (ja) * 2021-05-06 2022-11-10 東京エレクトロン株式会社 エッチング方法及びプラズマ処理システム
WO2022265673A1 (en) * 2021-06-17 2022-12-22 Lam Research Corporation Systems and methods for etching a high aspect ratio structure
JP2023083086A (ja) * 2021-12-03 2023-06-15 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム
WO2023127820A1 (ja) * 2021-12-28 2023-07-06 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021103710A (ja) * 2019-12-25 2021-07-15 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP2022116742A (ja) * 2021-01-29 2022-08-10 東京エレクトロン株式会社 基板処理方法および基板処理装置
WO2022234805A1 (ja) * 2021-05-06 2022-11-10 東京エレクトロン株式会社 エッチング方法及びプラズマ処理システム
WO2022265673A1 (en) * 2021-06-17 2022-12-22 Lam Research Corporation Systems and methods for etching a high aspect ratio structure
JP2023083086A (ja) * 2021-12-03 2023-06-15 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム
WO2023127820A1 (ja) * 2021-12-28 2023-07-06 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置

Also Published As

Publication number Publication date
CN121533184A (zh) 2026-02-13
TW202507839A (zh) 2025-02-16
WO2025018161A1 (ja) 2025-01-23
JP7852163B2 (ja) 2026-04-27
KR20260040018A (ko) 2026-03-23

Similar Documents

Publication Publication Date Title
BR102022025291A2 (https=)
BR102023014872A2 (https=)
BR102023012440A2 (https=)
BR102023010976A2 (https=)
BR102023009641A2 (https=)
BR102023008688A2 (https=)
BR102023007252A2 (https=)
BR102023005164A2 (https=)
BR102023001987A2 (https=)
BR102023001877A2 (https=)
BR102022026909A2 (https=)
BR102022017795A2 (https=)
BR202022009269U2 (https=)
BR202022005961U2 (https=)
BR202022001779U2 (https=)
BR202022000931U2 (https=)
BY13141U (https=)
BY13151U (https=)
BY13135U (https=)
BY13136U (https=)
BY13137U (https=)
BY13138U (https=)
BY13139U (https=)
BY13140U (https=)
CN307047763S (https=)

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20260107

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20260107

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20260107

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20260217

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20260306

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20260415

R150 Certificate of patent or registration of utility model

Ref document number: 7852163

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150