CN121533184A - 蚀刻方法及蚀刻装置 - Google Patents

蚀刻方法及蚀刻装置

Info

Publication number
CN121533184A
CN121533184A CN202480045984.7A CN202480045984A CN121533184A CN 121533184 A CN121533184 A CN 121533184A CN 202480045984 A CN202480045984 A CN 202480045984A CN 121533184 A CN121533184 A CN 121533184A
Authority
CN
China
Prior art keywords
gas
process gas
etching
silicon
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202480045984.7A
Other languages
English (en)
Chinese (zh)
Inventor
户村幕树
高桥笃史
齐藤昴
有马仙善
门马廉
石川慎也
横山乔大
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN121533184A publication Critical patent/CN121533184A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

Landscapes

  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
CN202480045984.7A 2023-07-18 2024-07-04 蚀刻方法及蚀刻装置 Pending CN121533184A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023-117004 2023-07-18
JP2023117004 2023-07-18
PCT/JP2024/024216 WO2025018161A1 (ja) 2023-07-18 2024-07-04 エッチング方法及びエッチング装置

Publications (1)

Publication Number Publication Date
CN121533184A true CN121533184A (zh) 2026-02-13

Family

ID=94281496

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202480045984.7A Pending CN121533184A (zh) 2023-07-18 2024-07-04 蚀刻方法及蚀刻装置

Country Status (5)

Country Link
JP (1) JP7852163B2 (https=)
KR (1) KR20260040018A (https=)
CN (1) CN121533184A (https=)
TW (1) TW202507839A (https=)
WO (1) WO2025018161A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7333752B2 (ja) * 2019-12-25 2023-08-25 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP7650674B2 (ja) * 2021-01-29 2025-03-25 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP7325160B2 (ja) * 2021-05-06 2023-08-14 東京エレクトロン株式会社 エッチング方法及びプラズマ処理システム
US20240120209A1 (en) * 2021-06-17 2024-04-11 Lam Research Corporation Systems and methods for etching a high aspect ratio structure
JP7348672B2 (ja) * 2021-12-03 2023-09-21 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム
KR20240121327A (ko) * 2021-12-28 2024-08-08 도쿄엘렉트론가부시키가이샤 에칭 방법 및 플라즈마 처리 장치

Also Published As

Publication number Publication date
TW202507839A (zh) 2025-02-16
WO2025018161A1 (ja) 2025-01-23
JP7852163B2 (ja) 2026-04-27
JPWO2025018161A1 (https=) 2025-01-23
KR20260040018A (ko) 2026-03-23

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