JP7852163B2 - エッチング方法及びエッチング装置 - Google Patents

エッチング方法及びエッチング装置

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Publication number
JP7852163B2
JP7852163B2 JP2025533961A JP2025533961A JP7852163B2 JP 7852163 B2 JP7852163 B2 JP 7852163B2 JP 2025533961 A JP2025533961 A JP 2025533961A JP 2025533961 A JP2025533961 A JP 2025533961A JP 7852163 B2 JP7852163 B2 JP 7852163B2
Authority
JP
Japan
Prior art keywords
gas
etching
film
processing gas
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2025533961A
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English (en)
Japanese (ja)
Other versions
JPWO2025018161A5 (https=
JPWO2025018161A1 (https=
Inventor
幕樹 戸村
篤史 ▲高▼橋
昴 齊藤
仙善 有馬
廉 門馬
慎也 石川
喬大 横山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of JPWO2025018161A1 publication Critical patent/JPWO2025018161A1/ja
Publication of JPWO2025018161A5 publication Critical patent/JPWO2025018161A5/ja
Application granted granted Critical
Publication of JP7852163B2 publication Critical patent/JP7852163B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

Landscapes

  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
JP2025533961A 2023-07-18 2024-07-04 エッチング方法及びエッチング装置 Active JP7852163B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023117004 2023-07-18
JP2023117004 2023-07-18
PCT/JP2024/024216 WO2025018161A1 (ja) 2023-07-18 2024-07-04 エッチング方法及びエッチング装置

Publications (3)

Publication Number Publication Date
JPWO2025018161A1 JPWO2025018161A1 (https=) 2025-01-23
JPWO2025018161A5 JPWO2025018161A5 (https=) 2026-03-05
JP7852163B2 true JP7852163B2 (ja) 2026-04-27

Family

ID=94281496

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025533961A Active JP7852163B2 (ja) 2023-07-18 2024-07-04 エッチング方法及びエッチング装置

Country Status (5)

Country Link
JP (1) JP7852163B2 (https=)
KR (1) KR20260040018A (https=)
CN (1) CN121533184A (https=)
TW (1) TW202507839A (https=)
WO (1) WO2025018161A1 (https=)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021103710A (ja) 2019-12-25 2021-07-15 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP2022116742A (ja) 2021-01-29 2022-08-10 東京エレクトロン株式会社 基板処理方法および基板処理装置
WO2022234805A1 (ja) 2021-05-06 2022-11-10 東京エレクトロン株式会社 エッチング方法及びプラズマ処理システム
WO2022265673A1 (en) 2021-06-17 2022-12-22 Lam Research Corporation Systems and methods for etching a high aspect ratio structure
JP2023083086A (ja) 2021-12-03 2023-06-15 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム
WO2023127820A1 (ja) 2021-12-28 2023-07-06 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021103710A (ja) 2019-12-25 2021-07-15 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP2022116742A (ja) 2021-01-29 2022-08-10 東京エレクトロン株式会社 基板処理方法および基板処理装置
WO2022234805A1 (ja) 2021-05-06 2022-11-10 東京エレクトロン株式会社 エッチング方法及びプラズマ処理システム
WO2022265673A1 (en) 2021-06-17 2022-12-22 Lam Research Corporation Systems and methods for etching a high aspect ratio structure
JP2023083086A (ja) 2021-12-03 2023-06-15 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム
WO2023127820A1 (ja) 2021-12-28 2023-07-06 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置

Also Published As

Publication number Publication date
CN121533184A (zh) 2026-02-13
TW202507839A (zh) 2025-02-16
WO2025018161A1 (ja) 2025-01-23
JPWO2025018161A1 (https=) 2025-01-23
KR20260040018A (ko) 2026-03-23

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