JP2009543351A5 - - Google Patents
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- Publication number
- JP2009543351A5 JP2009543351A5 JP2009518436A JP2009518436A JP2009543351A5 JP 2009543351 A5 JP2009543351 A5 JP 2009543351A5 JP 2009518436 A JP2009518436 A JP 2009518436A JP 2009518436 A JP2009518436 A JP 2009518436A JP 2009543351 A5 JP2009543351 A5 JP 2009543351A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- containing compound
- etching
- phase change
- change layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 claims description 37
- 150000001875 compounds Chemical class 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 29
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 13
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 13
- 229910052794 bromium Inorganic materials 0.000 claims description 13
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 12
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 12
- 229910052801 chlorine Inorganic materials 0.000 claims description 12
- 239000000460 chlorine Substances 0.000 claims description 12
- 229910052731 fluorine Inorganic materials 0.000 claims description 12
- 239000011737 fluorine Substances 0.000 claims description 12
- 238000002161 passivation Methods 0.000 claims description 5
- 238000011010 flushing procedure Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 229910000618 GeSbTe Inorganic materials 0.000 claims description 3
- 229910001215 Te alloy Inorganic materials 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- DDJAGKOCVFYQOV-UHFFFAOYSA-N tellanylideneantimony Chemical compound [Te]=[Sb] DDJAGKOCVFYQOV-UHFFFAOYSA-N 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 2
- 239000012530 fluid Substances 0.000 claims description 2
- 229910052756 noble gas Inorganic materials 0.000 claims description 2
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/479,303 | 2006-06-29 | ||
| US11/479,303 US7682979B2 (en) | 2006-06-29 | 2006-06-29 | Phase change alloy etch |
| PCT/US2007/070795 WO2008002760A1 (en) | 2006-06-29 | 2007-06-08 | Phase change alloy etch |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009543351A JP2009543351A (ja) | 2009-12-03 |
| JP2009543351A5 true JP2009543351A5 (https=) | 2012-04-26 |
| JP5164981B2 JP5164981B2 (ja) | 2013-03-21 |
Family
ID=38596720
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009518436A Active JP5164981B2 (ja) | 2006-06-29 | 2007-06-08 | 相変化合金のエッチング方法及び装置 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7682979B2 (https=) |
| EP (1) | EP2036140A1 (https=) |
| JP (1) | JP5164981B2 (https=) |
| KR (1) | KR101445402B1 (https=) |
| CN (1) | CN101485006B (https=) |
| TW (1) | TWI443736B (https=) |
| WO (1) | WO2008002760A1 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100838527B1 (ko) * | 2006-07-31 | 2008-06-17 | 삼성전자주식회사 | 상변화 기억소자 형성 방법 |
| US8283255B2 (en) * | 2007-05-24 | 2012-10-09 | Lam Research Corporation | In-situ photoresist strip during plasma etching of active hard mask |
| CN103460383B (zh) | 2011-04-14 | 2016-01-06 | 松下电器产业株式会社 | 非易失性存储元件及其制造方法 |
| JP2015525468A (ja) * | 2012-05-30 | 2015-09-03 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | 基板同士をボンディングする装置および方法 |
| US10211054B1 (en) | 2017-11-03 | 2019-02-19 | International Business Machines Corporation | Tone inversion integration for phase change memory |
| US11699596B2 (en) * | 2018-11-30 | 2023-07-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Metal etching with in situ plasma ashing |
| JP7482684B2 (ja) * | 2020-05-21 | 2024-05-14 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6087689A (en) | 1997-06-16 | 2000-07-11 | Micron Technology, Inc. | Memory cell having a reduced active area and a memory array incorporating the same |
| TW466266B (en) * | 1997-12-18 | 2001-12-01 | Central Glass Co Ltd | Gas for removing deposit and removal method using same |
| US20030000924A1 (en) | 2001-06-29 | 2003-01-02 | Tokyo Electron Limited | Apparatus and method of gas injection sequencing |
| EP1475848B1 (en) * | 2003-05-07 | 2006-12-20 | STMicroelectronics S.r.l. | Process for defining a chalcogenide material layer, in particular in a process for manufacturing phase change memory cells |
| WO2005011011A1 (en) | 2003-07-21 | 2005-02-03 | Unaxis Usa Inc. | Etching method for making chalcogenide memory elements |
| JP2005340554A (ja) * | 2004-05-28 | 2005-12-08 | Hitachi Ltd | 半導体記憶装置の製造方法 |
| TWI318003B (en) * | 2005-11-21 | 2009-12-01 | Macronix Int Co Ltd | Air cell thermal isolation for a memory array formed of a programmable resistive material |
| US20070158632A1 (en) * | 2006-01-09 | 2007-07-12 | Macronix International Co., Ltd. | Method for Fabricating a Pillar-Shaped Phase Change Memory Element |
-
2006
- 2006-06-29 US US11/479,303 patent/US7682979B2/en active Active
-
2007
- 2007-06-08 EP EP07784377A patent/EP2036140A1/en not_active Withdrawn
- 2007-06-08 WO PCT/US2007/070795 patent/WO2008002760A1/en not_active Ceased
- 2007-06-08 JP JP2009518436A patent/JP5164981B2/ja active Active
- 2007-06-08 KR KR1020097001397A patent/KR101445402B1/ko active Active
- 2007-06-08 CN CN2007800247055A patent/CN101485006B/zh not_active Expired - Fee Related
- 2007-06-20 TW TW096122069A patent/TWI443736B/zh active
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