KR101445402B1 - 상 변화 합금 식각 - Google Patents

상 변화 합금 식각 Download PDF

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Publication number
KR101445402B1
KR101445402B1 KR1020097001397A KR20097001397A KR101445402B1 KR 101445402 B1 KR101445402 B1 KR 101445402B1 KR 1020097001397 A KR1020097001397 A KR 1020097001397A KR 20097001397 A KR20097001397 A KR 20097001397A KR 101445402 B1 KR101445402 B1 KR 101445402B1
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KR
South Korea
Prior art keywords
gas
containing compound
phase change
etching
flow rate
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KR1020097001397A
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English (en)
Korean (ko)
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KR20090034903A (ko
Inventor
쳰 푸
선? 류
린다 풍-밍 리
Original Assignee
램 리써치 코포레이션
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Publication of KR20090034903A publication Critical patent/KR20090034903A/ko
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Publication of KR101445402B1 publication Critical patent/KR101445402B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Drying Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
KR1020097001397A 2006-06-29 2007-06-08 상 변화 합금 식각 Active KR101445402B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/479,303 2006-06-29
US11/479,303 US7682979B2 (en) 2006-06-29 2006-06-29 Phase change alloy etch
PCT/US2007/070795 WO2008002760A1 (en) 2006-06-29 2007-06-08 Phase change alloy etch

Publications (2)

Publication Number Publication Date
KR20090034903A KR20090034903A (ko) 2009-04-08
KR101445402B1 true KR101445402B1 (ko) 2014-09-26

Family

ID=38596720

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097001397A Active KR101445402B1 (ko) 2006-06-29 2007-06-08 상 변화 합금 식각

Country Status (7)

Country Link
US (1) US7682979B2 (https=)
EP (1) EP2036140A1 (https=)
JP (1) JP5164981B2 (https=)
KR (1) KR101445402B1 (https=)
CN (1) CN101485006B (https=)
TW (1) TWI443736B (https=)
WO (1) WO2008002760A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100838527B1 (ko) * 2006-07-31 2008-06-17 삼성전자주식회사 상변화 기억소자 형성 방법
US8283255B2 (en) * 2007-05-24 2012-10-09 Lam Research Corporation In-situ photoresist strip during plasma etching of active hard mask
CN103460383B (zh) 2011-04-14 2016-01-06 松下电器产业株式会社 非易失性存储元件及其制造方法
JP2015525468A (ja) * 2012-05-30 2015-09-03 エーファウ・グループ・エー・タルナー・ゲーエムベーハー 基板同士をボンディングする装置および方法
US10211054B1 (en) 2017-11-03 2019-02-19 International Business Machines Corporation Tone inversion integration for phase change memory
US11699596B2 (en) * 2018-11-30 2023-07-11 Taiwan Semiconductor Manufacturing Co., Ltd. Metal etching with in situ plasma ashing
JP7482684B2 (ja) * 2020-05-21 2024-05-14 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030000924A1 (en) * 2001-06-29 2003-01-02 Tokyo Electron Limited Apparatus and method of gas injection sequencing
WO2005011011A1 (en) * 2003-07-21 2005-02-03 Unaxis Usa Inc. Etching method for making chalcogenide memory elements
JP2005340554A (ja) * 2004-05-28 2005-12-08 Hitachi Ltd 半導体記憶装置の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6087689A (en) 1997-06-16 2000-07-11 Micron Technology, Inc. Memory cell having a reduced active area and a memory array incorporating the same
TW466266B (en) * 1997-12-18 2001-12-01 Central Glass Co Ltd Gas for removing deposit and removal method using same
EP1475848B1 (en) * 2003-05-07 2006-12-20 STMicroelectronics S.r.l. Process for defining a chalcogenide material layer, in particular in a process for manufacturing phase change memory cells
TWI318003B (en) * 2005-11-21 2009-12-01 Macronix Int Co Ltd Air cell thermal isolation for a memory array formed of a programmable resistive material
US20070158632A1 (en) * 2006-01-09 2007-07-12 Macronix International Co., Ltd. Method for Fabricating a Pillar-Shaped Phase Change Memory Element

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030000924A1 (en) * 2001-06-29 2003-01-02 Tokyo Electron Limited Apparatus and method of gas injection sequencing
WO2005011011A1 (en) * 2003-07-21 2005-02-03 Unaxis Usa Inc. Etching method for making chalcogenide memory elements
JP2005340554A (ja) * 2004-05-28 2005-12-08 Hitachi Ltd 半導体記憶装置の製造方法

Also Published As

Publication number Publication date
KR20090034903A (ko) 2009-04-08
TW200820340A (en) 2008-05-01
CN101485006B (zh) 2011-12-14
JP5164981B2 (ja) 2013-03-21
EP2036140A1 (en) 2009-03-18
US20090130855A1 (en) 2009-05-21
TWI443736B (zh) 2014-07-01
JP2009543351A (ja) 2009-12-03
WO2008002760A1 (en) 2008-01-03
US7682979B2 (en) 2010-03-23
CN101485006A (zh) 2009-07-15

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