JPWO2024252542A1 - - Google Patents

Info

Publication number
JPWO2024252542A1
JPWO2024252542A1 JP2025525510A JP2025525510A JPWO2024252542A1 JP WO2024252542 A1 JPWO2024252542 A1 JP WO2024252542A1 JP 2025525510 A JP2025525510 A JP 2025525510A JP 2025525510 A JP2025525510 A JP 2025525510A JP WO2024252542 A1 JPWO2024252542 A1 JP WO2024252542A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025525510A
Other languages
Japanese (ja)
Other versions
JPWO2024252542A5 (cg-RX-API-DMAC7.html
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2024252542A1 publication Critical patent/JPWO2024252542A1/ja
Publication of JPWO2024252542A5 publication Critical patent/JPWO2024252542A5/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00—Compounds of gallium, indium or thallium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
    • C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2025525510A 2023-06-07 2023-06-07 Pending JPWO2024252542A1 (cg-RX-API-DMAC7.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2023/021097 WO2024252542A1 (ja) 2023-06-07 2023-06-07 三酸化二ガリウム単結晶基板、三酸化二ガリウム単結晶の製造方法、および三酸化二ガリウム単結晶基板の製造方法

Publications (2)

Publication Number Publication Date
JPWO2024252542A1 true JPWO2024252542A1 (cg-RX-API-DMAC7.html) 2024-12-12
JPWO2024252542A5 JPWO2024252542A5 (cg-RX-API-DMAC7.html) 2026-02-19

Family

ID=93795550

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025525510A Pending JPWO2024252542A1 (cg-RX-API-DMAC7.html) 2023-06-07 2023-06-07

Country Status (5)

Country Link
EP (1) EP4726083A4 (cg-RX-API-DMAC7.html)
JP (1) JPWO2024252542A1 (cg-RX-API-DMAC7.html)
CN (1) CN121241171A (cg-RX-API-DMAC7.html)
TW (1) TW202449241A (cg-RX-API-DMAC7.html)
WO (1) WO2024252542A1 (cg-RX-API-DMAC7.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025263085A1 (ja) * 2024-06-17 2025-12-26 住友電気工業株式会社 ベータ型三酸化二ガリウム単結晶の製造方法、ベータ型三酸化二ガリウム単結晶基板の製造方法、およびベータ型三酸化二ガリウム単結晶基板

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001142039A (ja) * 1998-12-18 2001-05-25 Tokin Corp 硬磁性ガーネット厚膜材料およびその製造方法
JP4025869B2 (ja) * 2002-12-04 2007-12-26 独立行政法人物質・材料研究機構 酸化ガリウムナノワイヤーとその製造方法
JP5794955B2 (ja) * 2012-07-11 2015-10-14 信越化学工業株式会社 β−Ｇａ２Ｏ３単結晶膜付基板の製造方法
JP6403057B2 (ja) 2014-10-21 2018-10-10 国立大学法人信州大学 β−Ｇａ２Ｏ３結晶の製造方法および製造装置
JP6726910B2 (ja) 2016-04-21 2020-07-22 国立大学法人信州大学 酸化ガリウム結晶の製造装置および酸化ガリウム結晶の製造方法
KR102414621B1 (ko) * 2017-01-25 2022-06-30 상하이 인스티튜트 오브 옵틱스 앤 파인 메카닉스, 차이니즈 아카데미 오브 사이언시스 도핑된 산화갈륨 결정질 재료 및 그의 제조 방법과 응용
JP6933339B2 (ja) * 2017-10-18 2021-09-08 矢崎総業株式会社 半導体装置および半導体ウェーハ
JP6800468B2 (ja) 2018-10-11 2020-12-16 国立大学法人信州大学 酸化ガリウム結晶の製造装置及び酸化ガリウム結晶の製造方法並びにこれらに用いる酸化ガリウム結晶育成用のるつぼ
JP6989855B2 (ja) 2019-10-24 2022-01-12 不二越機械工業株式会社 β－Ｇａ２Ｏ３単結晶製造装置およびこれに用いる発熱体
JP6846724B2 (ja) 2020-02-28 2021-03-24 国立大学法人信州大学 酸化ガリウム結晶の製造装置および酸化ガリウム結晶の製造方法
US11342484B2 (en) * 2020-05-11 2022-05-24 Silanna UV Technologies Pte Ltd Metal oxide semiconductor-based light emitting device

Also Published As

Publication number Publication date
TW202449241A (zh) 2024-12-16
EP4726083A4 (en) 2026-08-12
WO2024252542A1 (ja) 2024-12-12
CN121241171A (zh) 2025-12-30
EP4726083A1 (en) 2026-04-15

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