JPWO2024237161A5 - - Google Patents

Info

Publication number
JPWO2024237161A5
JPWO2024237161A5 JP2025520537A JP2025520537A JPWO2024237161A5 JP WO2024237161 A5 JPWO2024237161 A5 JP WO2024237161A5 JP 2025520537 A JP2025520537 A JP 2025520537A JP 2025520537 A JP2025520537 A JP 2025520537A JP WO2024237161 A5 JPWO2024237161 A5 JP WO2024237161A5
Authority
JP
Japan
Prior art keywords
semiconductor layer
type semiconductor
type
iii
group compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025520537A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2024237161A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2024/017231 external-priority patent/WO2024237161A1/ja
Publication of JPWO2024237161A1 publication Critical patent/JPWO2024237161A1/ja
Publication of JPWO2024237161A5 publication Critical patent/JPWO2024237161A5/ja
Pending legal-status Critical Current

Links

JP2025520537A 2023-05-12 2024-05-09 Pending JPWO2024237161A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023079312 2023-05-12
PCT/JP2024/017231 WO2024237161A1 (ja) 2023-05-12 2024-05-09 半導体積層体および光半導体素子

Publications (2)

Publication Number Publication Date
JPWO2024237161A1 JPWO2024237161A1 (https=) 2024-11-21
JPWO2024237161A5 true JPWO2024237161A5 (https=) 2025-09-10

Family

ID=93519095

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025520537A Pending JPWO2024237161A1 (https=) 2023-05-12 2024-05-09

Country Status (2)

Country Link
JP (1) JPWO2024237161A1 (https=)
WO (1) WO2024237161A1 (https=)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06152056A (ja) * 1992-11-10 1994-05-31 Fujitsu Ltd 半導体レーザ
JPH0815213B2 (ja) * 1993-01-14 1996-02-14 日本電気株式会社 電界効果トランジスタ
JP3421836B2 (ja) * 1998-07-14 2003-06-30 日本電信電話株式会社 半導体装置の製造方法
US7473941B2 (en) * 2005-08-15 2009-01-06 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Structures for reducing operating voltage in a semiconductor device
KR20070023453A (ko) * 2005-08-24 2007-02-28 삼성전자주식회사 스토리지 노드의 특성을 개선할 수 있는 반도체 메모리소자의 제조 방법
JP2008235574A (ja) * 2007-03-20 2008-10-02 Sumitomo Electric Ind Ltd 面発光半導体レーザ
JP2008235519A (ja) * 2007-03-20 2008-10-02 Nippon Telegr & Teleph Corp <Ntt> 光半導体素子及び光半導体素子の作製方法
JP2009059918A (ja) * 2007-08-31 2009-03-19 Sumitomo Electric Ind Ltd 光半導体デバイス
TWI617048B (zh) * 2016-06-29 2018-03-01 光鋐科技股份有限公司 具有穿隧接合層的磊晶結構、p型半導體結構朝上的製程中間結構及其製造方法

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