JPWO2024237161A1 - - Google Patents

Info

Publication number
JPWO2024237161A1
JPWO2024237161A1 JP2025520537A JP2025520537A JPWO2024237161A1 JP WO2024237161 A1 JPWO2024237161 A1 JP WO2024237161A1 JP 2025520537 A JP2025520537 A JP 2025520537A JP 2025520537 A JP2025520537 A JP 2025520537A JP WO2024237161 A1 JPWO2024237161 A1 JP WO2024237161A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025520537A
Other languages
Japanese (ja)
Other versions
JPWO2024237161A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2024237161A1 publication Critical patent/JPWO2024237161A1/ja
Publication of JPWO2024237161A5 publication Critical patent/JPWO2024237161A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2025520537A 2023-05-12 2024-05-09 Pending JPWO2024237161A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023079312 2023-05-12
PCT/JP2024/017231 WO2024237161A1 (ja) 2023-05-12 2024-05-09 半導体積層体および光半導体素子

Publications (2)

Publication Number Publication Date
JPWO2024237161A1 true JPWO2024237161A1 (https=) 2024-11-21
JPWO2024237161A5 JPWO2024237161A5 (https=) 2025-09-10

Family

ID=93519095

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025520537A Pending JPWO2024237161A1 (https=) 2023-05-12 2024-05-09

Country Status (2)

Country Link
JP (1) JPWO2024237161A1 (https=)
WO (1) WO2024237161A1 (https=)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06152056A (ja) * 1992-11-10 1994-05-31 Fujitsu Ltd 半導体レーザ
JPH06236898A (ja) * 1993-01-14 1994-08-23 Nec Corp 電界効果トランジスタ
JP2000031597A (ja) * 1998-07-14 2000-01-28 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法
JP2007053376A (ja) * 2005-08-15 2007-03-01 Avago Technologies Ecbu Ip (Singapore) Pte Ltd 半導体素子の作動電圧を低下させるための構造
JP2007059918A (ja) * 2005-08-24 2007-03-08 Samsung Electronics Co Ltd ストレージノード、そのストレージノードを有する半導体メモリ素子およびストレージノードの特性を改善した半導体メモリ素子の製造方法
JP2008235519A (ja) * 2007-03-20 2008-10-02 Nippon Telegr & Teleph Corp <Ntt> 光半導体素子及び光半導体素子の作製方法
JP2008235574A (ja) * 2007-03-20 2008-10-02 Sumitomo Electric Ind Ltd 面発光半導体レーザ
JP2009059918A (ja) * 2007-08-31 2009-03-19 Sumitomo Electric Ind Ltd 光半導体デバイス
US20180006189A1 (en) * 2016-06-29 2018-01-04 Epileds Technologies, Inc. Epitaxial structure with tunnel junction, p-side up processing intermediate structure and method of manufacturing the same

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06152056A (ja) * 1992-11-10 1994-05-31 Fujitsu Ltd 半導体レーザ
JPH06236898A (ja) * 1993-01-14 1994-08-23 Nec Corp 電界効果トランジスタ
JP2000031597A (ja) * 1998-07-14 2000-01-28 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法
JP2007053376A (ja) * 2005-08-15 2007-03-01 Avago Technologies Ecbu Ip (Singapore) Pte Ltd 半導体素子の作動電圧を低下させるための構造
JP2007059918A (ja) * 2005-08-24 2007-03-08 Samsung Electronics Co Ltd ストレージノード、そのストレージノードを有する半導体メモリ素子およびストレージノードの特性を改善した半導体メモリ素子の製造方法
JP2008235519A (ja) * 2007-03-20 2008-10-02 Nippon Telegr & Teleph Corp <Ntt> 光半導体素子及び光半導体素子の作製方法
JP2008235574A (ja) * 2007-03-20 2008-10-02 Sumitomo Electric Ind Ltd 面発光半導体レーザ
JP2009059918A (ja) * 2007-08-31 2009-03-19 Sumitomo Electric Ind Ltd 光半導体デバイス
US20180006189A1 (en) * 2016-06-29 2018-01-04 Epileds Technologies, Inc. Epitaxial structure with tunnel junction, p-side up processing intermediate structure and method of manufacturing the same

Also Published As

Publication number Publication date
WO2024237161A1 (ja) 2024-11-21

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