JPWO2024228364A1 - - Google Patents

Info

Publication number
JPWO2024228364A1
JPWO2024228364A1 JP2025518141A JP2025518141A JPWO2024228364A1 JP WO2024228364 A1 JPWO2024228364 A1 JP WO2024228364A1 JP 2025518141 A JP2025518141 A JP 2025518141A JP 2025518141 A JP2025518141 A JP 2025518141A JP WO2024228364 A1 JPWO2024228364 A1 JP WO2024228364A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2025518141A
Other languages
Japanese (ja)
Other versions
JPWO2024228364A5 (https=
JP7794362B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2024228364A1 publication Critical patent/JPWO2024228364A1/ja
Publication of JPWO2024228364A5 publication Critical patent/JPWO2024228364A5/ja
Priority to JP2025188267A priority Critical patent/JP7819808B2/ja
Application granted granted Critical
Publication of JP7794362B2 publication Critical patent/JP7794362B2/ja
Priority to JP2026020196A priority patent/JP2026066333A/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00Cleaning of wafers, substrates or parts of devices
    • H10P70/30Cleaning after the substrates have been singulated
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00Cutting or separating of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402Wafer tapes, e.g. grinding or dicing support tapes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
JP2025518141A 2023-05-01 2024-04-25 半導体チップの洗浄方法及び半導体装置の製造方法 Active JP7794362B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2025188267A JP7819808B2 (ja) 2023-05-01 2025-11-07 半導体チップの洗浄方法及び半導体装置の製造方法
JP2026020196A JP2026066333A (ja) 2023-05-01 2026-02-10 半導体チップの洗浄方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023075732 2023-05-01
JP2023075732 2023-05-01
PCT/JP2024/016316 WO2024228364A1 (ja) 2023-05-01 2024-04-25 半導体チップの洗浄方法及び半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025188267A Division JP7819808B2 (ja) 2023-05-01 2025-11-07 半導体チップの洗浄方法及び半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JPWO2024228364A1 true JPWO2024228364A1 (https=) 2024-11-07
JPWO2024228364A5 JPWO2024228364A5 (https=) 2025-10-08
JP7794362B2 JP7794362B2 (ja) 2026-01-06

Family

ID=93333002

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2025518141A Active JP7794362B2 (ja) 2023-05-01 2024-04-25 半導体チップの洗浄方法及び半導体装置の製造方法
JP2025188267A Active JP7819808B2 (ja) 2023-05-01 2025-11-07 半導体チップの洗浄方法及び半導体装置の製造方法
JP2026020196A Pending JP2026066333A (ja) 2023-05-01 2026-02-10 半導体チップの洗浄方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2025188267A Active JP7819808B2 (ja) 2023-05-01 2025-11-07 半導体チップの洗浄方法及び半導体装置の製造方法
JP2026020196A Pending JP2026066333A (ja) 2023-05-01 2026-02-10 半導体チップの洗浄方法

Country Status (5)

Country Link
JP (3) JP7794362B2 (https=)
KR (1) KR20260002717A (https=)
CN (1) CN121002620A (https=)
TW (1) TW202445727A (https=)
WO (1) WO2024228364A1 (https=)

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010093273A (ja) * 2009-11-13 2010-04-22 Casio Computer Co Ltd 半導体装置の製造方法
JP2012169484A (ja) * 2011-02-15 2012-09-06 Nitto Denko Corp 半導体装置の製造方法
JP2016034993A (ja) * 2014-08-01 2016-03-17 リンテック株式会社 粘着シート
JP2016039186A (ja) * 2014-08-05 2016-03-22 株式会社ディスコ ウエーハの加工方法
JP2018190902A (ja) * 2017-05-10 2018-11-29 株式会社ディスコ 加工方法
JP2018200957A (ja) * 2017-05-26 2018-12-20 パナソニックIpマネジメント株式会社 素子チップの製造方法
CN111739854A (zh) * 2020-07-06 2020-10-02 绍兴同芯成集成电路有限公司 一种开窗孔双面电镀厚铜膜
JP2020188154A (ja) * 2019-05-15 2020-11-19 パナソニックIpマネジメント株式会社 樹脂組成物、樹脂被覆基板および素子チップの製造方法
JP2022096079A (ja) * 2020-12-17 2022-06-29 パナソニックIpマネジメント株式会社 素子チップの製造方法
WO2022250130A1 (ja) * 2021-05-28 2022-12-01 三井化学東セロ株式会社 バックグラインド用粘着性フィルムおよび電子装置の製造方法
JP2023043724A (ja) * 2021-09-16 2023-03-29 古河電気工業株式会社 半導体加工用テープ、及び半導体チップの製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001197431A (ja) 2000-11-02 2001-07-19 Sony Corp 情報処理装置および情報処理方法、並びにプログラム格納媒体
JP6961387B2 (ja) * 2017-05-19 2021-11-05 日東電工株式会社 ダイシングダイボンドフィルム

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010093273A (ja) * 2009-11-13 2010-04-22 Casio Computer Co Ltd 半導体装置の製造方法
JP2012169484A (ja) * 2011-02-15 2012-09-06 Nitto Denko Corp 半導体装置の製造方法
JP2016034993A (ja) * 2014-08-01 2016-03-17 リンテック株式会社 粘着シート
JP2016039186A (ja) * 2014-08-05 2016-03-22 株式会社ディスコ ウエーハの加工方法
JP2018190902A (ja) * 2017-05-10 2018-11-29 株式会社ディスコ 加工方法
JP2018200957A (ja) * 2017-05-26 2018-12-20 パナソニックIpマネジメント株式会社 素子チップの製造方法
JP2020188154A (ja) * 2019-05-15 2020-11-19 パナソニックIpマネジメント株式会社 樹脂組成物、樹脂被覆基板および素子チップの製造方法
CN111739854A (zh) * 2020-07-06 2020-10-02 绍兴同芯成集成电路有限公司 一种开窗孔双面电镀厚铜膜
JP2022096079A (ja) * 2020-12-17 2022-06-29 パナソニックIpマネジメント株式会社 素子チップの製造方法
WO2022250130A1 (ja) * 2021-05-28 2022-12-01 三井化学東セロ株式会社 バックグラインド用粘着性フィルムおよび電子装置の製造方法
JP2023043724A (ja) * 2021-09-16 2023-03-29 古河電気工業株式会社 半導体加工用テープ、及び半導体チップの製造方法

Also Published As

Publication number Publication date
JP2026066333A (ja) 2026-04-16
JP7819808B2 (ja) 2026-02-25
JP2026009401A (ja) 2026-01-19
WO2024228364A1 (ja) 2024-11-07
KR20260002717A (ko) 2026-01-06
CN121002620A (zh) 2025-11-21
JP7794362B2 (ja) 2026-01-06
TW202445727A (zh) 2024-11-16

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