CN111739854A - 一种开窗孔双面电镀厚铜膜 - Google Patents
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 11
- 239000011241 protective layer Substances 0.000 claims abstract description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000010937 tungsten Substances 0.000 claims abstract description 8
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 8
- 239000012790 adhesive layer Substances 0.000 claims abstract description 7
- 239000002245 particle Substances 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 12
- 239000010936 titanium Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 3
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims 1
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- 239000004065 semiconductor Substances 0.000 description 1
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Abstract
本发明公开了一种开窗孔双面电镀厚铜膜,属于晶圆加工技术领域,包括晶圆、厚铜膜、铜粒和切割框架,所述厚铜膜通过粘合剂层键合在切割框架上;两个晶圆之间有切割沟槽,所述切割沟槽连接有氧化硅或氮化硅保护层;所述晶圆与厚铜膜之间连接有附着层、阻挡层和铜种子层;所述晶圆与铜粒之间连接有ILD层,所述ILD层上开设有钨通孔,所述ILD层上连接有附着层、阻挡层和铜种子层,附着层、阻挡层和铜种子层位于钨通孔正上方;使晶圆键合玻璃载板并形成超薄晶圆,并在晶圆正面接触点处形成玻璃载板窗口,解决厚膜铜与封装材之间的漏电问题。
Description
技术领域
本发明涉及技术领域,更具体地说,涉及一种开窗孔双面电镀厚铜膜。
背景技术
在高功率、高电压/电流半导体元件的设计及结构中,利用厚膜铜散热导材(Cuheat Sink)是非常重要的,否则元件会因过热而造成局部损伤产生严重的信赖性问题,而超薄晶圆对于低电阻及高频操作的需求又极为重要,如何结合超薄晶圆及双面电镀厚膜铜散热导线加上切割面侧壁的保护的结构及装程方法为本发明之核心。现有技术.现有技术的缺点:1、超薄晶圆若做整片背面的厚膜铜电镀,由于应力及热胀系数Cu与Si的差点大,将层生及翘曲Crack的问题;2、正反面同时电镀厚的Cu膜,若无玻璃基板开窗的技术无法实施,若先实施正面,晶圆应力问题将使背面厚Cu膜电镀无法实施;3、厚膜Cu在超薄晶圆上用传统切割及电浆切割工艺皆有极大的困难;4、切割后的双面厚膜Cu在玻璃载板的解键合工艺也十分困难,超薄晶圆切割时或转移至Dicing Frame时破片可能性很高;5、现行切割技术在分离的晶粒是无法实施侧壁的保护,封装材与厚膜导线在高功率运行中很难避免电流漏电的信赖性问题(leakage Problem)。
发明内容
针对现有技术的不足,本发明的目的在于提供一种开窗孔双面电镀厚铜膜,使晶圆键合玻璃载板并形成超薄晶圆,并在晶圆正面接触点处形成玻璃载板窗口,可双面分别镀Ti/Ni/Cu,正反面晶圆可同时做厚膜CuECP,利用低温的电浆化学气相沈积技术及与相性蚀刻解决在切割道的侧壁上形成spacer以保护厚膜铜与封装材之间的漏电问题。
本发明的目的可以通过以下技术方案实现:
一种开窗孔双面电镀厚铜膜:包括晶圆、厚铜膜、铜粒和切割框架,所述厚铜膜通过粘合剂层键合在切割框架上;
两个晶圆之间有切割沟槽,所述切割沟槽连接有氧化硅或氮化硅保护层;
所述晶圆与厚铜膜之间连接有附着层、阻挡层和铜种子层;
所述晶圆与铜粒之间连接有ILD层,所述ILD层上开设有钨通孔,所述ILD层上连接有附着层、阻挡层和铜种子层,附着层、阻挡层和铜种子层位于钨通孔正上方。
作为本发明的一种优选方案,所述附着层为钛层,所述钛层厚度为1至2微米,所述阻挡层为镍层,所述镍层的厚度为1至2微米。
作为本发明的一种优选方案,所述铜粒制作过程:进行黄光工序,图案决定好正面厚铜模位置,电镀厚膜CuECP后去除光阻层,用蚀刻将Ti/Ni/Cu去除掉,蚀刻停止在晶圆表面。
作为本发明的一种优选方案,所述切割沟槽制作过程:背面晶圆以厚膜铜为HardMask,用SF6电浆蚀刻硅切割道,停止在黏着剂层,使用羟胺类去除剂清洗蚀刻后残留在晶圆表面的残留物及聚合物,切割道上进行PECVD进行沉积薄膜操作,蚀刻在晶圆背面及已切割沟槽的内侧壁生成厚度为的氧化硅或氮化硅保护层,以含氟气体进行电浆化处理,并提供偏压电位,刻蚀氧化硅或氮化硅形成侧壁。
本发明的有益效果:
1.本发明可安全无损的切割具铜散热结结构的薄晶圆;
2.本发明以一次黄光,掩膜板图案工艺(photomask),施行Cusink镀厚膜及反向施行电浆晶粒切割。
3.本发明双面同时电镀制作铜散热片结构,提高生产力。
4.本发明双面同时电镀,使得工艺过程中应力的双面平衡,避免翘曲破片等损失的问题
5.本发明侧壁的保护,避免封装材与厚膜导线在高功率运行中电流漏电(leakageProblem)。
6.本发明可配合铜夹焊封装结构,极大的提高散热能力,维持元件的最佳性能。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为本发明的结构示意图;
图2为图1中A处放大图;
图3为图1中B处放大图;
图4为图1中C处放大图。
图中标号说明:1晶圆、2厚铜膜、3切割框架、4 W-plug、5铜种子层、6阻挡层、7附着层、8 ILD层、9氧化硅保护层、10氮化硅薄膜层。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其它实施例,都属于本发明保护的范围。
如图所示,一种开窗孔双面电镀厚铜膜:包括晶圆、厚铜膜、铜粒和切割框架,所述厚铜膜通过粘合剂层键合在切割框架上;
两个晶圆之间有切割沟槽,所述切割沟槽连接有氧化硅或氮化硅保护层;
所述晶圆与厚铜膜之间连接有附着层、阻挡层和铜种子层;
所述晶圆与铜粒之间连接有ILD层,所述ILD层上开设有钨通孔,所述ILD层上连接有附着层、阻挡层和铜种子层,附着层、阻挡层和铜种子层位于钨通孔正上方。
所述附着层为钛层,所述钛层厚度为1至2微米,所述阻挡层为镍层,所述镍层的厚度为1至2微米。
所述铜粒制作过程:进行黄光工序,图案决定好正面厚铜模位置,电镀厚膜CuECP后去除光阻层,用蚀刻将Ti/Ni/Cu去除掉,蚀刻停止在晶圆表面。
所述切割沟槽制作过程:背面晶圆以厚膜铜为HardMask,用SF6电浆蚀刻硅切割道,停止在黏着剂层,使用羟胺类去除剂清洗蚀刻后残留在晶圆表面的残留物及聚合物,切割道上进行PECVD进行沉积薄膜操作,蚀刻在晶圆背面及已切割沟槽的内侧壁生成厚度为的氧化硅或氮化硅保护层,以含氟气体进行电浆化处理,并提供偏压电位,刻蚀氧化硅或氮化硅形成侧壁。
在本说明书的描述中,参考术语“一个实施例”、“示例”、“具体示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中,对上述术语的示意性表述不一定指的是相同的实施例或示例。而且,描述的具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。
以上显示和描述了本发明的基本原理、主要特征和本发明的优点。本行业的技术人员应该了解,本发明不受上述实施例的限制,上述实施例和说明书中描述的只是说明本发明的原理,在不脱离本发明精神和范围的前提下,本发明还会有各种变化和改进,这些变化和改进都落入要求保护的本发明范围内。
Claims (4)
1.一种开窗孔双面电镀厚铜膜,其特征在于:
包括晶圆、厚铜膜、铜粒和切割框架,所述厚铜膜通过粘合剂层键合在切割框架上;
两个晶圆之间有切割沟槽,所述切割沟槽连接有氧化硅或氮化硅保护层;
所述晶圆与厚铜膜之间连接有附着层、阻挡层和铜种子层;
所述晶圆与铜粒之间连接有ILD层,所述ILD层上开设有钨通孔,所述ILD层上连接有附着层、阻挡层和铜种子层,附着层、阻挡层和铜种子层位于钨通孔正上方。
2.根据权利要求1所述的一种开窗孔双面电镀厚铜膜工艺,其特征在于:所述附着层为钛层,所述钛层厚度为1至2微米,所述阻挡层为镍层,所述镍层的厚度为1至2微米。
3.根据权利要求1所述的一种开窗孔双面电镀厚铜膜工艺,其特征在于:所述铜粒制作过程:进行黄光工序,图案决定好正面厚铜模位置,电镀厚膜Cu ECP后去除光阻层,用蚀刻将Ti/Ni/Cu去除掉,蚀刻停止在晶圆表面。
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