JPWO2024143382A5 - - Google Patents

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Publication number
JPWO2024143382A5
JPWO2024143382A5 JP2024567873A JP2024567873A JPWO2024143382A5 JP WO2024143382 A5 JPWO2024143382 A5 JP WO2024143382A5 JP 2024567873 A JP2024567873 A JP 2024567873A JP 2024567873 A JP2024567873 A JP 2024567873A JP WO2024143382 A5 JPWO2024143382 A5 JP WO2024143382A5
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JP
Japan
Prior art keywords
columns
sic layer
inversion
sic
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024567873A
Other languages
English (en)
Japanese (ja)
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JPWO2024143382A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2023/046703 external-priority patent/WO2024143382A1/ja
Publication of JPWO2024143382A1 publication Critical patent/JPWO2024143382A1/ja
Publication of JPWO2024143382A5 publication Critical patent/JPWO2024143382A5/ja
Pending legal-status Critical Current

Links

JP2024567873A 2022-12-28 2023-12-26 Pending JPWO2024143382A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022212616 2022-12-28
PCT/JP2023/046703 WO2024143382A1 (ja) 2022-12-28 2023-12-26 SiC半導体装置

Publications (2)

Publication Number Publication Date
JPWO2024143382A1 JPWO2024143382A1 (https=) 2024-07-04
JPWO2024143382A5 true JPWO2024143382A5 (https=) 2025-09-11

Family

ID=91717838

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024567873A Pending JPWO2024143382A1 (https=) 2022-12-28 2023-12-26

Country Status (5)

Country Link
US (1) US20250318213A1 (https=)
JP (1) JPWO2024143382A1 (https=)
CN (1) CN120419307A (https=)
DE (1) DE112023004893T5 (https=)
WO (1) WO2024143382A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7055725B2 (ja) * 2018-09-14 2022-04-18 株式会社東芝 半導体装置
JP7156170B2 (ja) * 2019-05-20 2022-10-19 株式会社豊田中央研究所 半導体装置とその製造方法
JP7472477B2 (ja) * 2019-12-02 2024-04-23 富士電機株式会社 炭化珪素半導体装置の製造方法および炭化珪素基板の製造方法
JP7540320B2 (ja) * 2020-12-11 2024-08-27 株式会社デンソー 炭化珪素半導体装置およびその製造方法
DE112021006730T5 (de) * 2021-02-01 2023-10-12 Rohm Co., Ltd. Sic-halbleiterbauelement

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