JPWO2024116827A5 - - Google Patents
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- JPWO2024116827A5 JPWO2024116827A5 JP2024519815A JP2024519815A JPWO2024116827A5 JP WO2024116827 A5 JPWO2024116827 A5 JP WO2024116827A5 JP 2024519815 A JP2024519815 A JP 2024519815A JP 2024519815 A JP2024519815 A JP 2024519815A JP WO2024116827 A5 JPWO2024116827 A5 JP WO2024116827A5
- Authority
- JP
- Japan
- Prior art keywords
- sic
- substrate
- reaction chamber
- less
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022193588 | 2022-12-02 | ||
| JP2022193588 | 2022-12-02 | ||
| PCT/JP2023/040933 WO2024116827A1 (ja) | 2022-12-02 | 2023-11-14 | ＳｉＣ成形体及びＳｉＣ成形体の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2024116827A1 JPWO2024116827A1 (https=) | 2024-06-06 |
| JP7553750B1 JP7553750B1 (ja) | 2024-09-18 |
| JPWO2024116827A5 true JPWO2024116827A5 (https=) | 2024-10-30 |
Family
ID=91323674
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024519815A Active JP7553750B1 (ja) | 2022-12-02 | 2023-11-14 | ＳｉＣ成形体及びＳｉＣ成形体の製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20250154647A1 (https=) |
| EP (1) | EP4455360A4 (https=) |
| JP (1) | JP7553750B1 (https=) |
| KR (1) | KR20240128986A (https=) |
| CN (1) | CN118591656A (https=) |
| TW (1) | TW202436220A (https=) |
| WO (1) | WO2024116827A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2026071049A1 (ja) * | 2024-09-30 | 2026-04-02 | 東海カーボン株式会社 | 多結晶炭化珪素成形体およびその製造方法 |
| WO2026071050A1 (ja) * | 2024-09-30 | 2026-04-02 | 東海カーボン株式会社 | 多結晶炭化珪素成形体およびその製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4595153B2 (ja) | 2000-02-14 | 2010-12-08 | 旭硝子株式会社 | 炭化ケイ素体およびその製造方法 |
| US6811761B2 (en) * | 2000-11-10 | 2004-11-02 | Shipley Company, L.L.C. | Silicon carbide with high thermal conductivity |
| US20050123713A1 (en) * | 2003-12-05 | 2005-06-09 | Forrest David T. | Articles formed by chemical vapor deposition and methods for their manufacture |
| KR101178234B1 (ko) * | 2010-07-14 | 2012-08-30 | 서울시립대학교 산학협력단 | 이트륨나이트레이트 및 그 화합물 중 적어도 어느 하나를 포함하는 탄화규소 세라믹스 제조용 조성물, 탄화규소 세라믹스 및 그 제조방법 |
| WO2014027472A1 (ja) * | 2012-08-17 | 2014-02-20 | 株式会社Ihi | 耐熱複合材料の製造方法及び製造装置 |
| JP7239432B2 (ja) * | 2019-09-27 | 2023-03-14 | 東海カーボン株式会社 | 多結晶ＳｉＣ成形体の製造方法 |
| JP7077288B2 (ja) | 2019-09-27 | 2022-05-30 | 東海カーボン株式会社 | 多結晶ＳｉＣ成形体 |
-
2023
- 2023-11-14 JP JP2024519815A patent/JP7553750B1/ja active Active
- 2023-11-14 EP EP23897478.6A patent/EP4455360A4/en active Pending
- 2023-11-14 CN CN202380018557.5A patent/CN118591656A/zh active Pending
- 2023-11-14 WO PCT/JP2023/040933 patent/WO2024116827A1/ja not_active Ceased
- 2023-11-14 KR KR1020247025256A patent/KR20240128986A/ko active Pending
- 2023-11-14 US US18/835,005 patent/US20250154647A1/en active Pending
- 2023-11-30 TW TW112146524A patent/TW202436220A/zh unknown
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