JP7553750B1 - ＳｉＣ成形体及びＳｉＣ成形体の製造方法 - Google Patents

ＳｉＣ成形体及びＳｉＣ成形体の製造方法 Download PDF

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Publication number
JP7553750B1
JP7553750B1 JP2024519815A JP2024519815A JP7553750B1 JP 7553750 B1 JP7553750 B1 JP 7553750B1 JP 2024519815 A JP2024519815 A JP 2024519815A JP 2024519815 A JP2024519815 A JP 2024519815A JP 7553750 B1 JP7553750 B1 JP 7553750B1
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Japan
Prior art keywords
sic
gas
molded body
reaction chamber
substrate
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Japanese (ja)
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JPWO2024116827A5 (https=
JPWO2024116827A1 (https=
Inventor
真百合 今川
昇平 大石
聡浩 黒柳
励子 屋敷田
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Tokai Carbon Co Ltd
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Tokai Carbon Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment

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  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Ceramic Products (AREA)
  • Carbon And Carbon Compounds (AREA)
JP2024519815A 2022-12-02 2023-11-14 ＳｉＣ成形体及びＳｉＣ成形体の製造方法 Active JP7553750B1 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022193588 2022-12-02
JP2022193588 2022-12-02
PCT/JP2023/040933 WO2024116827A1 (ja) 2022-12-02 2023-11-14 ＳｉＣ成形体及びＳｉＣ成形体の製造方法

Publications (3)

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JPWO2024116827A1 JPWO2024116827A1 (https=) 2024-06-06
JP7553750B1 true JP7553750B1 (ja) 2024-09-18
JPWO2024116827A5 JPWO2024116827A5 (https=) 2024-10-30

Family

ID=91323674

Family Applications (1)

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JP2024519815A Active JP7553750B1 (ja) 2022-12-02 2023-11-14 ＳｉＣ成形体及びＳｉＣ成形体の製造方法

Country Status (7)

Country Link
US (1) US20250154647A1 (https=)
EP (1) EP4455360A4 (https=)
JP (1) JP7553750B1 (https=)
KR (1) KR20240128986A (https=)
CN (1) CN118591656A (https=)
TW (1) TW202436220A (https=)
WO (1) WO2024116827A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026071049A1 (ja) * 2024-09-30 2026-04-02 東海カーボン株式会社 多結晶炭化珪素成形体およびその製造方法
WO2026071050A1 (ja) * 2024-09-30 2026-04-02 東海カーボン株式会社 多結晶炭化珪素成形体およびその製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007513257A (ja) * 2003-12-05 2007-05-24 モーガン・アドヴァンスド・セラミックス・インコーポレイテッド 化学蒸着によって形成される自立型炭化ケイ素製品及びそれらを製造するための方法
JP2021054666A (ja) * 2019-09-27 2021-04-08 東海カーボン株式会社 多結晶ＳｉＣ成形体及びその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4595153B2 (ja) 2000-02-14 2010-12-08 旭硝子株式会社 炭化ケイ素体およびその製造方法
US6811761B2 (en) * 2000-11-10 2004-11-02 Shipley Company, L.L.C. Silicon carbide with high thermal conductivity
KR101178234B1 (ko) * 2010-07-14 2012-08-30 서울시립대학교 산학협력단 이트륨나이트레이트 및 그 화합물 중 적어도 어느 하나를 포함하는 탄화규소 세라믹스 제조용 조성물, 탄화규소 세라믹스 및 그 제조방법
WO2014027472A1 (ja) * 2012-08-17 2014-02-20 株式会社Ihi 耐熱複合材料の製造方法及び製造装置
JP7077288B2 (ja) 2019-09-27 2022-05-30 東海カーボン株式会社 多結晶ＳｉＣ成形体

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007513257A (ja) * 2003-12-05 2007-05-24 モーガン・アドヴァンスド・セラミックス・インコーポレイテッド 化学蒸着によって形成される自立型炭化ケイ素製品及びそれらを製造するための方法
JP2021054666A (ja) * 2019-09-27 2021-04-08 東海カーボン株式会社 多結晶ＳｉＣ成形体及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026071049A1 (ja) * 2024-09-30 2026-04-02 東海カーボン株式会社 多結晶炭化珪素成形体およびその製造方法
WO2026071050A1 (ja) * 2024-09-30 2026-04-02 東海カーボン株式会社 多結晶炭化珪素成形体およびその製造方法

Also Published As

Publication number Publication date
KR20240128986A (ko) 2024-08-27
WO2024116827A1 (ja) 2024-06-06
US20250154647A1 (en) 2025-05-15
EP4455360A1 (en) 2024-10-30
TW202436220A (zh) 2024-09-16
EP4455360A4 (en) 2026-01-07
CN118591656A (zh) 2024-09-03
JPWO2024116827A1 (https=) 2024-06-06

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