KR20240128986A - SiC 성형체 및 SiC 성형체의 제조 방법 - Google Patents
SiC 성형체 및 SiC 성형체의 제조 방법 Download PDFInfo
- Publication number
- KR20240128986A KR20240128986A KR1020247025256A KR20247025256A KR20240128986A KR 20240128986 A KR20240128986 A KR 20240128986A KR 1020247025256 A KR1020247025256 A KR 1020247025256A KR 20247025256 A KR20247025256 A KR 20247025256A KR 20240128986 A KR20240128986 A KR 20240128986A
- Authority
- KR
- South Korea
- Prior art keywords
- molded body
- sic
- sic molded
- gas
- reaction chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/42—Silicides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Ceramic Products (AREA)
- Carbon And Carbon Compounds (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2022-193588 | 2022-12-02 | ||
| JP2022193588 | 2022-12-02 | ||
| PCT/JP2023/040933 WO2024116827A1 (ja) | 2022-12-02 | 2023-11-14 | SiC成形体及びSiC成形体の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20240128986A true KR20240128986A (ko) | 2024-08-27 |
Family
ID=91323674
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020247025256A Pending KR20240128986A (ko) | 2022-12-02 | 2023-11-14 | SiC 성형체 및 SiC 성형체의 제조 방법 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20250154647A1 (https=) |
| EP (1) | EP4455360A4 (https=) |
| JP (1) | JP7553750B1 (https=) |
| KR (1) | KR20240128986A (https=) |
| CN (1) | CN118591656A (https=) |
| TW (1) | TW202436220A (https=) |
| WO (1) | WO2024116827A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2026071049A1 (ja) * | 2024-09-30 | 2026-04-02 | 東海カーボン株式会社 | 多結晶炭化珪素成形体およびその製造方法 |
| WO2026071050A1 (ja) * | 2024-09-30 | 2026-04-02 | 東海カーボン株式会社 | 多結晶炭化珪素成形体およびその製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001220237A (ja) | 2000-02-14 | 2001-08-14 | Asahi Glass Co Ltd | 炭化ケイ素体およびその製造方法 |
| JP2021054667A (ja) | 2019-09-27 | 2021-04-08 | 東海カーボン株式会社 | 多結晶SiC成形体 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6811761B2 (en) * | 2000-11-10 | 2004-11-02 | Shipley Company, L.L.C. | Silicon carbide with high thermal conductivity |
| US20050123713A1 (en) * | 2003-12-05 | 2005-06-09 | Forrest David T. | Articles formed by chemical vapor deposition and methods for their manufacture |
| KR101178234B1 (ko) * | 2010-07-14 | 2012-08-30 | 서울시립대학교 산학협력단 | 이트륨나이트레이트 및 그 화합물 중 적어도 어느 하나를 포함하는 탄화규소 세라믹스 제조용 조성물, 탄화규소 세라믹스 및 그 제조방법 |
| WO2014027472A1 (ja) * | 2012-08-17 | 2014-02-20 | 株式会社Ihi | 耐熱複合材料の製造方法及び製造装置 |
| JP7239432B2 (ja) * | 2019-09-27 | 2023-03-14 | 東海カーボン株式会社 | 多結晶SiC成形体の製造方法 |
-
2023
- 2023-11-14 JP JP2024519815A patent/JP7553750B1/ja active Active
- 2023-11-14 EP EP23897478.6A patent/EP4455360A4/en active Pending
- 2023-11-14 CN CN202380018557.5A patent/CN118591656A/zh active Pending
- 2023-11-14 WO PCT/JP2023/040933 patent/WO2024116827A1/ja not_active Ceased
- 2023-11-14 KR KR1020247025256A patent/KR20240128986A/ko active Pending
- 2023-11-14 US US18/835,005 patent/US20250154647A1/en active Pending
- 2023-11-30 TW TW112146524A patent/TW202436220A/zh unknown
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001220237A (ja) | 2000-02-14 | 2001-08-14 | Asahi Glass Co Ltd | 炭化ケイ素体およびその製造方法 |
| JP2021054667A (ja) | 2019-09-27 | 2021-04-08 | 東海カーボン株式会社 | 多結晶SiC成形体 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024116827A1 (ja) | 2024-06-06 |
| US20250154647A1 (en) | 2025-05-15 |
| EP4455360A1 (en) | 2024-10-30 |
| TW202436220A (zh) | 2024-09-16 |
| EP4455360A4 (en) | 2026-01-07 |
| CN118591656A (zh) | 2024-09-03 |
| JP7553750B1 (ja) | 2024-09-18 |
| JPWO2024116827A1 (https=) | 2024-06-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
|
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| D21 | Rejection of application intended |
Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D21-EXM-PE0902 (AS PROVIDED BY THE NATIONAL OFFICE) |
|
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| P11 | Amendment of application requested |
Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE) |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |