KR20240128986A - SiC 성형체 및 SiC 성형체의 제조 방법 - Google Patents

SiC 성형체 및 SiC 성형체의 제조 방법 Download PDF

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Publication number
KR20240128986A
KR20240128986A KR1020247025256A KR20247025256A KR20240128986A KR 20240128986 A KR20240128986 A KR 20240128986A KR 1020247025256 A KR1020247025256 A KR 1020247025256A KR 20247025256 A KR20247025256 A KR 20247025256A KR 20240128986 A KR20240128986 A KR 20240128986A
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KR
South Korea
Prior art keywords
molded body
sic
sic molded
gas
reaction chamber
Prior art date
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Pending
Application number
KR1020247025256A
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English (en)
Korean (ko)
Inventor
마유리 이마가와
쇼헤이 오이시
아키히로 쿠로야나기
레이코 야시키다
Original Assignee
도까이 카본 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 도까이 카본 가부시끼가이샤 filed Critical 도까이 카본 가부시끼가이샤
Publication of KR20240128986A publication Critical patent/KR20240128986A/ko
Pending legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42Silicides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32Carbides
    • C23C16/325Silicon carbide
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52Controlling or regulating the coating process
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56After-treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Ceramic Products (AREA)
  • Carbon And Carbon Compounds (AREA)
KR1020247025256A 2022-12-02 2023-11-14 SiC 성형체 및 SiC 성형체의 제조 방법 Pending KR20240128986A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2022-193588 2022-12-02
JP2022193588 2022-12-02
PCT/JP2023/040933 WO2024116827A1 (ja) 2022-12-02 2023-11-14 SiC成形体及びSiC成形体の製造方法

Publications (1)

Publication Number Publication Date
KR20240128986A true KR20240128986A (ko) 2024-08-27

Family

ID=91323674

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247025256A Pending KR20240128986A (ko) 2022-12-02 2023-11-14 SiC 성형체 및 SiC 성형체의 제조 방법

Country Status (7)

Country Link
US (1) US20250154647A1 (https=)
EP (1) EP4455360A4 (https=)
JP (1) JP7553750B1 (https=)
KR (1) KR20240128986A (https=)
CN (1) CN118591656A (https=)
TW (1) TW202436220A (https=)
WO (1) WO2024116827A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026071049A1 (ja) * 2024-09-30 2026-04-02 東海カーボン株式会社 多結晶炭化珪素成形体およびその製造方法
WO2026071050A1 (ja) * 2024-09-30 2026-04-02 東海カーボン株式会社 多結晶炭化珪素成形体およびその製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001220237A (ja) 2000-02-14 2001-08-14 Asahi Glass Co Ltd 炭化ケイ素体およびその製造方法
JP2021054667A (ja) 2019-09-27 2021-04-08 東海カーボン株式会社 多結晶SiC成形体

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6811761B2 (en) * 2000-11-10 2004-11-02 Shipley Company, L.L.C. Silicon carbide with high thermal conductivity
US20050123713A1 (en) * 2003-12-05 2005-06-09 Forrest David T. Articles formed by chemical vapor deposition and methods for their manufacture
KR101178234B1 (ko) * 2010-07-14 2012-08-30 서울시립대학교 산학협력단 이트륨나이트레이트 및 그 화합물 중 적어도 어느 하나를 포함하는 탄화규소 세라믹스 제조용 조성물, 탄화규소 세라믹스 및 그 제조방법
WO2014027472A1 (ja) * 2012-08-17 2014-02-20 株式会社Ihi 耐熱複合材料の製造方法及び製造装置
JP7239432B2 (ja) * 2019-09-27 2023-03-14 東海カーボン株式会社 多結晶SiC成形体の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001220237A (ja) 2000-02-14 2001-08-14 Asahi Glass Co Ltd 炭化ケイ素体およびその製造方法
JP2021054667A (ja) 2019-09-27 2021-04-08 東海カーボン株式会社 多結晶SiC成形体

Also Published As

Publication number Publication date
WO2024116827A1 (ja) 2024-06-06
US20250154647A1 (en) 2025-05-15
EP4455360A1 (en) 2024-10-30
TW202436220A (zh) 2024-09-16
EP4455360A4 (en) 2026-01-07
CN118591656A (zh) 2024-09-03
JP7553750B1 (ja) 2024-09-18
JPWO2024116827A1 (https=) 2024-06-06

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