CN118591656A - SiC成型体及SiC成型体的制造方法 - Google Patents

SiC成型体及SiC成型体的制造方法 Download PDF

Info

Publication number
CN118591656A
CN118591656A CN202380018557.5A CN202380018557A CN118591656A CN 118591656 A CN118591656 A CN 118591656A CN 202380018557 A CN202380018557 A CN 202380018557A CN 118591656 A CN118591656 A CN 118591656A
Authority
CN
China
Prior art keywords
molded body
sic
sic molded
gas
reaction chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380018557.5A
Other languages
English (en)
Chinese (zh)
Inventor
今川真百合
大石昇平
黑柳聪浩
屋敷田励子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokai Carbon Co Ltd
Original Assignee
Tokai Carbon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokai Carbon Co Ltd filed Critical Tokai Carbon Co Ltd
Publication of CN118591656A publication Critical patent/CN118591656A/zh
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Ceramic Products (AREA)
  • Carbon And Carbon Compounds (AREA)
CN202380018557.5A 2022-12-02 2023-11-14 SiC成型体及SiC成型体的制造方法 Pending CN118591656A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022193588 2022-12-02
JP2022-193588 2022-12-02
PCT/JP2023/040933 WO2024116827A1 (ja) 2022-12-02 2023-11-14 ＳｉＣ成形体及びＳｉＣ成形体の製造方法

Publications (1)

Publication Number Publication Date
CN118591656A true CN118591656A (zh) 2024-09-03

Family

ID=91323674

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380018557.5A Pending CN118591656A (zh) 2022-12-02 2023-11-14 SiC成型体及SiC成型体的制造方法

Country Status (7)

Country Link
US (1) US20250154647A1 (https=)
EP (1) EP4455360A4 (https=)
JP (1) JP7553750B1 (https=)
KR (1) KR20240128986A (https=)
CN (1) CN118591656A (https=)
TW (1) TW202436220A (https=)
WO (1) WO2024116827A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026071049A1 (ja) * 2024-09-30 2026-04-02 東海カーボン株式会社 多結晶炭化珪素成形体およびその製造方法
WO2026071050A1 (ja) * 2024-09-30 2026-04-02 東海カーボン株式会社 多結晶炭化珪素成形体およびその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4595153B2 (ja) 2000-02-14 2010-12-08 旭硝子株式会社 炭化ケイ素体およびその製造方法
US6811761B2 (en) * 2000-11-10 2004-11-02 Shipley Company, L.L.C. Silicon carbide with high thermal conductivity
US20050123713A1 (en) * 2003-12-05 2005-06-09 Forrest David T. Articles formed by chemical vapor deposition and methods for their manufacture
KR101178234B1 (ko) * 2010-07-14 2012-08-30 서울시립대학교 산학협력단 이트륨나이트레이트 및 그 화합물 중 적어도 어느 하나를 포함하는 탄화규소 세라믹스 제조용 조성물, 탄화규소 세라믹스 및 그 제조방법
WO2014027472A1 (ja) * 2012-08-17 2014-02-20 株式会社Ihi 耐熱複合材料の製造方法及び製造装置
JP7239432B2 (ja) * 2019-09-27 2023-03-14 東海カーボン株式会社 多結晶ＳｉＣ成形体の製造方法
JP7077288B2 (ja) 2019-09-27 2022-05-30 東海カーボン株式会社 多結晶ＳｉＣ成形体

Also Published As

Publication number Publication date
KR20240128986A (ko) 2024-08-27
WO2024116827A1 (ja) 2024-06-06
US20250154647A1 (en) 2025-05-15
EP4455360A1 (en) 2024-10-30
TW202436220A (zh) 2024-09-16
EP4455360A4 (en) 2026-01-07
JP7553750B1 (ja) 2024-09-18
JPWO2024116827A1 (https=) 2024-06-06

Similar Documents

Publication Publication Date Title
TWI541375B (zh) ＳｉＣ成形體及ＳｉＣ成形體之製造方法
CN118591656A (zh) SiC成型体及SiC成型体的制造方法
CN114514342A (zh) 一种多晶SiC成型体及其制造方法
US20240183071A1 (en) POLYCRYSTALLINE SiC MOLDED ARTICLE AND METHOD FOR PRODUCING SAME
JP7322408B2 (ja) 炭化珪素多結晶基板、炭化珪素多結晶膜の製造方法および炭化珪素多結晶基板の製造方法
JP2005310861A (ja) 炭化窒化珪素膜の形成方法
JP7413768B2 (ja) 多結晶基板の製造方法
JP7247819B2 (ja) 炭化ケイ素多結晶基板の製造方法
JP7400337B2 (ja) 炭化ケイ素多結晶基板の製造方法
TWI880327B (zh) 多結晶碳化矽成形體
JP2019147984A (ja) 炭化ケイ素部材
KR102934359B1 (ko) 다결정 SiC 기판 및 그의 제조 방법
JP7247749B2 (ja) 炭化ケイ素多結晶膜の成膜方法、サセプタ、及び、成膜装置
JP2021046336A (ja) 黒鉛製支持基板の表面処理方法、炭化珪素多結晶膜の成膜方法および炭化珪素多結晶基板の製造方法
JP7338193B2 (ja) 炭化ケイ素多結晶基板の製造方法
KR20150123075A (ko) 실리콘 카바이드 성형체 및 그 제조 방법
WO2024257580A1 (ja) 炭化珪素エピタキシャル基板、炭化珪素半導体装置の製造方法および炭化珪素エピタキシャル基板の製造方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination