TW202436220A - ＳｉＣ成形體及ＳｉＣ成形體之製造方法 - Google Patents

ＳｉＣ成形體及ＳｉＣ成形體之製造方法 Download PDF

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Publication number
TW202436220A
TW202436220A TW112146524A TW112146524A TW202436220A TW 202436220 A TW202436220 A TW 202436220A TW 112146524 A TW112146524 A TW 112146524A TW 112146524 A TW112146524 A TW 112146524A TW 202436220 A TW202436220 A TW 202436220A
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TW
Taiwan
Prior art keywords
sic
gas
molded body
reaction chamber
substrate
Prior art date
Application number
TW112146524A
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English (en)
Chinese (zh)
Inventor
今川真百合
大石昇平
黒柳聡浩
子
Original Assignee
日商東海碳素股份有限公司
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Application filed by 日商東海碳素股份有限公司 filed Critical 日商東海碳素股份有限公司
Publication of TW202436220A publication Critical patent/TW202436220A/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment

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  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Ceramic Products (AREA)
  • Carbon And Carbon Compounds (AREA)
TW112146524A 2022-12-02 2023-11-30 ＳｉＣ成形體及ＳｉＣ成形體之製造方法 TW202436220A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022193588 2022-12-02
JP2022-193588 2022-12-02

Publications (1)

Publication Number Publication Date
TW202436220A true TW202436220A (zh) 2024-09-16

Family

ID=91323674

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112146524A TW202436220A (zh) 2022-12-02 2023-11-30 ＳｉＣ成形體及ＳｉＣ成形體之製造方法

Country Status (7)

Country Link
US (1) US20250154647A1 (https=)
EP (1) EP4455360A4 (https=)
JP (1) JP7553750B1 (https=)
KR (1) KR20240128986A (https=)
CN (1) CN118591656A (https=)
TW (1) TW202436220A (https=)
WO (1) WO2024116827A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026071049A1 (ja) * 2024-09-30 2026-04-02 東海カーボン株式会社 多結晶炭化珪素成形体およびその製造方法
WO2026071050A1 (ja) * 2024-09-30 2026-04-02 東海カーボン株式会社 多結晶炭化珪素成形体およびその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4595153B2 (ja) 2000-02-14 2010-12-08 旭硝子株式会社 炭化ケイ素体およびその製造方法
US6811761B2 (en) * 2000-11-10 2004-11-02 Shipley Company, L.L.C. Silicon carbide with high thermal conductivity
US20050123713A1 (en) * 2003-12-05 2005-06-09 Forrest David T. Articles formed by chemical vapor deposition and methods for their manufacture
KR101178234B1 (ko) * 2010-07-14 2012-08-30 서울시립대학교 산학협력단 이트륨나이트레이트 및 그 화합물 중 적어도 어느 하나를 포함하는 탄화규소 세라믹스 제조용 조성물, 탄화규소 세라믹스 및 그 제조방법
WO2014027472A1 (ja) * 2012-08-17 2014-02-20 株式会社Ihi 耐熱複合材料の製造方法及び製造装置
JP7239432B2 (ja) * 2019-09-27 2023-03-14 東海カーボン株式会社 多結晶ＳｉＣ成形体の製造方法
JP7077288B2 (ja) 2019-09-27 2022-05-30 東海カーボン株式会社 多結晶ＳｉＣ成形体

Also Published As

Publication number Publication date
KR20240128986A (ko) 2024-08-27
WO2024116827A1 (ja) 2024-06-06
US20250154647A1 (en) 2025-05-15
EP4455360A1 (en) 2024-10-30
EP4455360A4 (en) 2026-01-07
CN118591656A (zh) 2024-09-03
JP7553750B1 (ja) 2024-09-18
JPWO2024116827A1 (https=) 2024-06-06

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