JPWO2024070351A5 - - Google Patents

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Publication number
JPWO2024070351A5
JPWO2024070351A5 JP2024549881A JP2024549881A JPWO2024070351A5 JP WO2024070351 A5 JPWO2024070351 A5 JP WO2024070351A5 JP 2024549881 A JP2024549881 A JP 2024549881A JP 2024549881 A JP2024549881 A JP 2024549881A JP WO2024070351 A5 JPWO2024070351 A5 JP WO2024070351A5
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JP
Japan
Prior art keywords
layer
intermediate layer
nitride
type intermediate
semiconductor light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024549881A
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English (en)
Japanese (ja)
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JPWO2024070351A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2023/030351 external-priority patent/WO2024070351A1/ja
Publication of JPWO2024070351A1 publication Critical patent/JPWO2024070351A1/ja
Publication of JPWO2024070351A5 publication Critical patent/JPWO2024070351A5/ja
Pending legal-status Critical Current

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JP2024549881A 2022-09-27 2023-08-23 Pending JPWO2024070351A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022153433 2022-09-27
PCT/JP2023/030351 WO2024070351A1 (ja) 2022-09-27 2023-08-23 窒化物系半導体発光素子

Publications (2)

Publication Number Publication Date
JPWO2024070351A1 JPWO2024070351A1 (https=) 2024-04-04
JPWO2024070351A5 true JPWO2024070351A5 (https=) 2025-06-09

Family

ID=90477306

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024549881A Pending JPWO2024070351A1 (https=) 2022-09-27 2023-08-23

Country Status (5)

Country Link
US (1) US20250239836A1 (https=)
EP (1) EP4597766A4 (https=)
JP (1) JPWO2024070351A1 (https=)
CN (1) CN119999032A (https=)
WO (1) WO2024070351A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025258311A1 (ja) * 2024-06-10 2025-12-18 ヌヴォトンテクノロジージャパン株式会社 半導体レーザ素子
WO2025258310A1 (ja) * 2024-06-10 2025-12-18 ヌヴォトンテクノロジージャパン株式会社 半導体レーザ素子

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3279266B2 (ja) * 1998-09-11 2002-04-30 日本電気株式会社 窒化ガリウム系半導体発光素子
JP4075324B2 (ja) * 2001-05-10 2008-04-16 日亜化学工業株式会社 窒化物半導体素子
JP2008047688A (ja) * 2006-08-15 2008-02-28 Toshiba Corp 窒化物系半導体レーザ装置
JP2009158955A (ja) * 2007-12-06 2009-07-16 Rohm Co Ltd 窒化物半導体レーザダイオード
US8144743B2 (en) * 2008-03-05 2012-03-27 Rohm Co., Ltd. Nitride based semiconductor device and fabrication method for the same
JP5343687B2 (ja) 2009-04-28 2013-11-13 日亜化学工業株式会社 窒化物半導体レーザ素子
US20120076165A1 (en) * 2009-06-05 2012-03-29 The Regents Of The University Of California Asymmetrically cladded laser diode
JP2011238678A (ja) * 2010-05-07 2011-11-24 Panasonic Corp 半導体発光装置
US8897329B2 (en) * 2010-09-20 2014-11-25 Corning Incorporated Group III nitride-based green-laser diodes and waveguide structures thereof
DE102013017275B4 (de) * 2013-10-17 2022-01-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauelement
WO2020158254A1 (ja) * 2019-01-30 2020-08-06 パナソニックセミコンダクターソリューションズ株式会社 半導体発光素子
JP7422496B2 (ja) * 2019-06-21 2024-01-26 古河機械金属株式会社 構造体、光デバイス、光デバイスの製造方法、構造体の製造方法

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