JPWO2023233910A5 - - Google Patents
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- JPWO2023233910A5 JPWO2023233910A5 JP2024524263A JP2024524263A JPWO2023233910A5 JP WO2023233910 A5 JPWO2023233910 A5 JP WO2023233910A5 JP 2024524263 A JP2024524263 A JP 2024524263A JP 2024524263 A JP2024524263 A JP 2024524263A JP WO2023233910 A5 JPWO2023233910 A5 JP WO2023233910A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- dimensional structure
- substrate
- longitudinal direction
- substrate surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022087822 | 2022-05-30 | ||
| JP2022087822 | 2022-05-30 | ||
| JP2022206599 | 2022-12-23 | ||
| JP2022206599 | 2022-12-23 | ||
| PCT/JP2023/017094 WO2023233910A1 (ja) | 2022-05-30 | 2023-05-01 | 半導体装置、その用途、およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2023233910A1 JPWO2023233910A1 (https=) | 2023-12-07 |
| JPWO2023233910A5 true JPWO2023233910A5 (https=) | 2024-11-26 |
| JP7785399B2 JP7785399B2 (ja) | 2025-12-15 |
Family
ID=89026414
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024524263A Active JP7785399B2 (ja) | 2022-05-30 | 2023-05-01 | 半導体装置、その用途、およびその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7785399B2 (https=) |
| WO (1) | WO2023233910A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024262383A1 (ja) * | 2023-06-19 | 2024-12-26 | パナソニックＩｐマネジメント株式会社 | エピタキシャルウェハ、β－Ｇａ２Ｏ３系デバイス、及び、β－Ｇａ２Ｏ３系デバイスの製造方法 |
| CN119433708B (zh) * | 2024-10-15 | 2026-01-16 | 南京大学 | 一种抑制(001)面β-Ga2O3外延生长各向异性的方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6137197B2 (ja) * | 2012-12-17 | 2017-05-31 | 三菱化学株式会社 | 窒化ガリウム基板、および、窒化物半導体結晶の製造方法 |
| JP2016031953A (ja) * | 2014-07-25 | 2016-03-07 | 株式会社タムラ製作所 | 半導体素子及びその製造方法、半導体基板、並びに結晶積層構造体 |
| WO2019191465A1 (en) * | 2018-03-28 | 2019-10-03 | Cornell University | VERTICAL GALLIUM OXIDE (Ga2O3) POWER FETS |
| CN112331553B (zh) * | 2019-07-16 | 2024-04-05 | 中国科学院苏州纳米技术与纳米仿生研究所 | 纳米线单片外延集成结构、制作方法与应用 |
-
2023
- 2023-05-01 WO PCT/JP2023/017094 patent/WO2023233910A1/ja not_active Ceased
- 2023-05-01 JP JP2024524263A patent/JP7785399B2/ja active Active
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