JPWO2023203425A5 - - Google Patents
Info
- Publication number
- JPWO2023203425A5 JPWO2023203425A5 JP2024515732A JP2024515732A JPWO2023203425A5 JP WO2023203425 A5 JPWO2023203425 A5 JP WO2023203425A5 JP 2024515732 A JP2024515732 A JP 2024515732A JP 2024515732 A JP2024515732 A JP 2024515732A JP WO2023203425 A5 JPWO2023203425 A5 JP WO2023203425A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- conductive layer
- region
- opening
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022070618 | 2022-04-22 | ||
| PCT/IB2023/053563 WO2023203425A1 (ja) | 2022-04-22 | 2023-04-07 | 半導体装置及び半導体装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023203425A1 JPWO2023203425A1 (https=) | 2023-10-26 |
| JPWO2023203425A5 true JPWO2023203425A5 (https=) | 2026-04-13 |
Family
ID=88419330
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024515732A Pending JPWO2023203425A1 (https=) | 2022-04-22 | 2023-04-07 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20250234591A1 (https=) |
| JP (1) | JPWO2023203425A1 (https=) |
| KR (1) | KR20250003649A (https=) |
| CN (1) | CN119013791A (https=) |
| WO (1) | WO2023203425A1 (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12575132B2 (en) | 2022-04-15 | 2026-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2025062253A1 (ja) * | 2023-09-22 | 2025-03-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TW202548389A (zh) * | 2023-12-01 | 2025-12-16 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| WO2025114846A1 (ja) * | 2023-12-01 | 2025-06-05 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2025114847A1 (ja) * | 2023-12-01 | 2025-06-05 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
| WO2025133871A1 (ja) * | 2023-12-22 | 2025-06-26 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
| TW202529564A (zh) * | 2023-12-28 | 2025-07-16 | 日商半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的製造方法 |
| WO2025215498A1 (ja) * | 2024-04-12 | 2025-10-16 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004105140A1 (ja) * | 2003-05-22 | 2004-12-02 | Fujitsu Limited | 電界効果トランジスタ及びその製造方法 |
| JP5716445B2 (ja) * | 2011-02-21 | 2015-05-13 | 富士通株式会社 | 縦型電界効果トランジスタとその製造方法及び電子機器 |
| WO2016128859A1 (en) * | 2015-02-11 | 2016-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP2017168761A (ja) * | 2016-03-18 | 2017-09-21 | 株式会社ジャパンディスプレイ | 半導体装置 |
| KR20190076045A (ko) | 2016-11-10 | 2019-07-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 표시 장치의 구동 방법 |
| US10312239B2 (en) * | 2017-03-16 | 2019-06-04 | Toshiba Memory Corporation | Semiconductor memory including semiconductor oxie |
-
2023
- 2023-04-07 WO PCT/IB2023/053563 patent/WO2023203425A1/ja not_active Ceased
- 2023-04-07 JP JP2024515732A patent/JPWO2023203425A1/ja active Pending
- 2023-04-07 US US18/855,696 patent/US20250234591A1/en active Pending
- 2023-04-07 CN CN202380033870.6A patent/CN119013791A/zh active Pending
- 2023-04-07 KR KR1020247036054A patent/KR20250003649A/ko active Pending
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