JPWO2023199153A5 - - Google Patents

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Publication number
JPWO2023199153A5
JPWO2023199153A5 JP2024515174A JP2024515174A JPWO2023199153A5 JP WO2023199153 A5 JPWO2023199153 A5 JP WO2023199153A5 JP 2024515174 A JP2024515174 A JP 2024515174A JP 2024515174 A JP2024515174 A JP 2024515174A JP WO2023199153 A5 JPWO2023199153 A5 JP WO2023199153A5
Authority
JP
Japan
Prior art keywords
electrode
insulating layer
layer
semiconductor
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024515174A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2023199153A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/IB2023/053222 external-priority patent/WO2023199153A1/ja
Publication of JPWO2023199153A1 publication Critical patent/JPWO2023199153A1/ja
Publication of JPWO2023199153A5 publication Critical patent/JPWO2023199153A5/ja
Pending legal-status Critical Current

Links

JP2024515174A 2022-04-15 2023-03-31 Pending JPWO2023199153A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022067447 2022-04-15
PCT/IB2023/053222 WO2023199153A1 (ja) 2022-04-15 2023-03-31 半導体装置

Publications (2)

Publication Number Publication Date
JPWO2023199153A1 JPWO2023199153A1 (https=) 2023-10-19
JPWO2023199153A5 true JPWO2023199153A5 (https=) 2026-04-08

Family

ID=88329150

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024515174A Pending JPWO2023199153A1 (https=) 2022-04-15 2023-03-31

Country Status (6)

Country Link
US (1) US20250220972A1 (https=)
JP (1) JPWO2023199153A1 (https=)
KR (1) KR20250003528A (https=)
CN (1) CN118946975A (https=)
TW (1) TW202410385A (https=)
WO (1) WO2023199153A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025094019A1 (ja) * 2023-11-02 2025-05-08 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110544436B (zh) 2014-09-12 2021-12-07 株式会社半导体能源研究所 显示装置
JP2016146422A (ja) * 2015-02-09 2016-08-12 株式会社ジャパンディスプレイ 表示装置
WO2016128859A1 (en) * 2015-02-11 2016-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP7128809B2 (ja) * 2017-05-01 2022-08-31 株式会社半導体エネルギー研究所 半導体装置
KR102551998B1 (ko) * 2018-11-20 2023-07-06 엘지디스플레이 주식회사 수직 구조 트랜지스터 및 전자장치

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