JPWO2023170751A5 - - Google Patents
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- Publication number
- JPWO2023170751A5 JPWO2023170751A5 JP2022550241A JP2022550241A JPWO2023170751A5 JP WO2023170751 A5 JPWO2023170751 A5 JP WO2023170751A5 JP 2022550241 A JP2022550241 A JP 2022550241A JP 2022550241 A JP2022550241 A JP 2022550241A JP WO2023170751 A5 JPWO2023170751 A5 JP WO2023170751A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- forming
- modified layer
- substrate
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 230000004048 modification Effects 0.000 claims description 7
- 238000012986 modification Methods 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 4
- 125000004432 carbon atom Chemical group C* 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 2
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims description 2
- 229910000077 silane Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims 2
- 239000011810 insulating material Substances 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 239000003960 organic solvent Substances 0.000 claims 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2022/009757 WO2023170751A1 (ja) | 2022-03-07 | 2022-03-07 | 半導体装置の製造方法および半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023170751A1 JPWO2023170751A1 (enrdf_load_stackoverflow) | 2023-09-14 |
| JPWO2023170751A5 true JPWO2023170751A5 (enrdf_load_stackoverflow) | 2024-02-14 |
Family
ID=87936363
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022550241A Pending JPWO2023170751A1 (enrdf_load_stackoverflow) | 2022-03-07 | 2022-03-07 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2023170751A1 (enrdf_load_stackoverflow) |
| WO (1) | WO2023170751A1 (enrdf_load_stackoverflow) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6376351A (ja) * | 1986-09-18 | 1988-04-06 | Nec Corp | 多層配線の形成方法 |
| US6166439A (en) * | 1997-12-30 | 2000-12-26 | Advanced Micro Devices, Inc. | Low dielectric constant material and method of application to isolate conductive lines |
| JP3974127B2 (ja) * | 2003-09-12 | 2007-09-12 | 株式会社東芝 | 半導体装置の製造方法 |
-
2022
- 2022-03-07 JP JP2022550241A patent/JPWO2023170751A1/ja active Pending
- 2022-03-07 WO PCT/JP2022/009757 patent/WO2023170751A1/ja active Application Filing
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