JPWO2023170751A1 - - Google Patents

Info

Publication number
JPWO2023170751A1
JPWO2023170751A1 JP2022550241A JP2022550241A JPWO2023170751A1 JP WO2023170751 A1 JPWO2023170751 A1 JP WO2023170751A1 JP 2022550241 A JP2022550241 A JP 2022550241A JP 2022550241 A JP2022550241 A JP 2022550241A JP WO2023170751 A1 JPWO2023170751 A1 JP WO2023170751A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022550241A
Other versions
JPWO2023170751A5 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023170751A1 publication Critical patent/JPWO2023170751A1/ja
Publication of JPWO2023170751A5 publication Critical patent/JPWO2023170751A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP2022550241A 2022-03-07 2022-03-07 Pending JPWO2023170751A1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/009757 WO2023170751A1 (ja) 2022-03-07 2022-03-07 半導体装置の製造方法および半導体装置

Publications (2)

Publication Number Publication Date
JPWO2023170751A1 true JPWO2023170751A1 (ja) 2023-09-14
JPWO2023170751A5 JPWO2023170751A5 (ja) 2024-02-14

Family

ID=87936363

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022550241A Pending JPWO2023170751A1 (ja) 2022-03-07 2022-03-07

Country Status (2)

Country Link
JP (1) JPWO2023170751A1 (ja)
WO (1) WO2023170751A1 (ja)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6376351A (ja) * 1986-09-18 1988-04-06 Nec Corp 多層配線の形成方法
US6166439A (en) * 1997-12-30 2000-12-26 Advanced Micro Devices, Inc. Low dielectric constant material and method of application to isolate conductive lines
JP3974127B2 (ja) * 2003-09-12 2007-09-12 株式会社東芝 半導体装置の製造方法

Also Published As

Publication number Publication date
WO2023170751A1 (ja) 2023-09-14

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