JPWO2023135896A5 - - Google Patents

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Publication number
JPWO2023135896A5
JPWO2023135896A5 JP2023573852A JP2023573852A JPWO2023135896A5 JP WO2023135896 A5 JPWO2023135896 A5 JP WO2023135896A5 JP 2023573852 A JP2023573852 A JP 2023573852A JP 2023573852 A JP2023573852 A JP 2023573852A JP WO2023135896 A5 JPWO2023135896 A5 JP WO2023135896A5
Authority
JP
Japan
Prior art keywords
region
width
semiconductor device
gate trench
field plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023573852A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2023135896A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2022/040078 external-priority patent/WO2023135896A1/ja
Publication of JPWO2023135896A1 publication Critical patent/JPWO2023135896A1/ja
Publication of JPWO2023135896A5 publication Critical patent/JPWO2023135896A5/ja
Pending legal-status Critical Current

Links

JP2023573852A 2022-01-11 2022-10-27 Pending JPWO2023135896A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022002323 2022-01-11
PCT/JP2022/040078 WO2023135896A1 (ja) 2022-01-11 2022-10-27 半導体装置

Publications (2)

Publication Number Publication Date
JPWO2023135896A1 JPWO2023135896A1 (https=) 2023-07-20
JPWO2023135896A5 true JPWO2023135896A5 (https=) 2024-09-20

Family

ID=87278767

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023573852A Pending JPWO2023135896A1 (https=) 2022-01-11 2022-10-27

Country Status (5)

Country Link
US (1) US20240355889A1 (https=)
JP (1) JPWO2023135896A1 (https=)
CN (1) CN118541809A (https=)
DE (1) DE112022005871T5 (https=)
WO (1) WO2023135896A1 (https=)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6967352B2 (ja) 2017-02-07 2021-11-17 ローム株式会社 半導体装置および半導体装置の製造方法、ならびに、半導体ウエハ構造物
US10950699B2 (en) * 2019-08-05 2021-03-16 Vishay-Siliconix, LLC Termination for vertical trench shielded devices
JP7461218B2 (ja) * 2020-05-22 2024-04-03 ローム株式会社 半導体装置

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