JP2023165398A5 - - Google Patents
Info
- Publication number
- JP2023165398A5 JP2023165398A5 JP2023064034A JP2023064034A JP2023165398A5 JP 2023165398 A5 JP2023165398 A5 JP 2023165398A5 JP 2023064034 A JP2023064034 A JP 2023064034A JP 2023064034 A JP2023064034 A JP 2023064034A JP 2023165398 A5 JP2023165398 A5 JP 2023165398A5
- Authority
- JP
- Japan
- Prior art keywords
- fin
- shaped pattern
- contact region
- source
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020220054036A KR102926289B1 (ko) | 2022-05-02 | 2022-05-02 | 반도체 장치 |
| KR10-2022-0054036 | 2022-05-02 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2023165398A JP2023165398A (ja) | 2023-11-15 |
| JP2023165398A5 true JP2023165398A5 (https=) | 2026-04-01 |
Family
ID=85556610
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023064034A Pending JP2023165398A (ja) | 2022-05-02 | 2023-04-11 | 半導体装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12490455B2 (https=) |
| EP (1) | EP4273917B1 (https=) |
| JP (1) | JP2023165398A (https=) |
| KR (1) | KR102926289B1 (https=) |
| CN (1) | CN116995076A (https=) |
| TW (1) | TW202410301A (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102574321B1 (ko) * | 2018-08-08 | 2023-09-04 | 삼성전자주식회사 | 게이트 분리층을 갖는 반도체 소자 |
| US12278147B2 (en) * | 2022-05-16 | 2025-04-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structure and method for forming the same |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102317646B1 (ko) | 2015-04-14 | 2021-10-27 | 삼성전자주식회사 | 반도체 소자 및 이의 제조 방법 |
| KR102472135B1 (ko) * | 2016-10-06 | 2022-11-29 | 삼성전자주식회사 | 집적회로 소자 및 그 제조 방법 |
| US10170413B2 (en) * | 2016-11-28 | 2019-01-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device having buried metal line and fabrication method of the same |
| US10522423B2 (en) | 2017-08-30 | 2019-12-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interconnect structure for fin-like field effect transistor |
| KR102593561B1 (ko) | 2018-06-25 | 2023-10-26 | 삼성전자주식회사 | 반도체 소자 |
| KR102574321B1 (ko) | 2018-08-08 | 2023-09-04 | 삼성전자주식회사 | 게이트 분리층을 갖는 반도체 소자 |
| KR102577262B1 (ko) | 2018-08-14 | 2023-09-11 | 삼성전자주식회사 | 확산 방지 영역을 갖는 반도체 소자 |
| US10770589B2 (en) | 2018-08-21 | 2020-09-08 | International Business Machines Corporation | Fin field effect transistor including a single diffusion break with a multi-layer dummy gate |
| KR102609372B1 (ko) * | 2018-08-31 | 2023-12-06 | 삼성전자주식회사 | 반도체 소자 |
| US11069784B2 (en) | 2019-05-17 | 2021-07-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method of manufacture |
| US11271083B2 (en) | 2019-09-27 | 2022-03-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device, FinFET device and methods of forming the same |
| KR102793906B1 (ko) * | 2020-06-10 | 2025-04-08 | 삼성전자주식회사 | 집적회로 장치 |
| KR102844940B1 (ko) * | 2020-08-31 | 2025-08-08 | 삼성전자주식회사 | 반도체 장치 |
| KR102944410B1 (ko) * | 2021-08-18 | 2026-03-25 | 삼성전자주식회사 | 반도체 장치 |
-
2022
- 2022-05-02 KR KR1020220054036A patent/KR102926289B1/ko active Active
- 2022-11-18 US US17/989,944 patent/US12490455B2/en active Active
-
2023
- 2023-03-08 EP EP23160782.1A patent/EP4273917B1/en active Active
- 2023-03-08 TW TW112108380A patent/TW202410301A/zh unknown
- 2023-04-11 JP JP2023064034A patent/JP2023165398A/ja active Pending
- 2023-04-27 CN CN202310472914.7A patent/CN116995076A/zh active Pending
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