JPWO2023112453A5 - - Google Patents

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Publication number
JPWO2023112453A5
JPWO2023112453A5 JP2023567562A JP2023567562A JPWO2023112453A5 JP WO2023112453 A5 JPWO2023112453 A5 JP WO2023112453A5 JP 2023567562 A JP2023567562 A JP 2023567562A JP 2023567562 A JP2023567562 A JP 2023567562A JP WO2023112453 A5 JPWO2023112453 A5 JP WO2023112453A5
Authority
JP
Japan
Prior art keywords
lanthanum
lanthanum compounds
removal
less
hydroxycarboxylic acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023567562A
Other languages
English (en)
Japanese (ja)
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JPWO2023112453A1 (https=
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2022/038107 external-priority patent/WO2023112453A1/ja
Publication of JPWO2023112453A1 publication Critical patent/JPWO2023112453A1/ja
Publication of JPWO2023112453A5 publication Critical patent/JPWO2023112453A5/ja
Pending legal-status Critical Current

Links

JP2023567562A 2021-12-17 2022-10-12 Pending JPWO2023112453A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021205279 2021-12-17
PCT/JP2022/038107 WO2023112453A1 (ja) 2021-12-17 2022-10-12 ランタン化合物の除去方法及びランタン化合物除去用処理液

Publications (2)

Publication Number Publication Date
JPWO2023112453A1 JPWO2023112453A1 (https=) 2023-06-22
JPWO2023112453A5 true JPWO2023112453A5 (https=) 2024-08-28

Family

ID=86774382

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023567562A Pending JPWO2023112453A1 (https=) 2021-12-17 2022-10-12

Country Status (4)

Country Link
JP (1) JPWO2023112453A1 (https=)
KR (1) KR20240121749A (https=)
TW (1) TWI904389B (https=)
WO (1) WO2023112453A1 (https=)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4189651B2 (ja) * 2003-03-26 2008-12-03 三菱瓦斯化学株式会社 高誘電率薄膜エッチング剤組成物
JP5592083B2 (ja) * 2009-06-12 2014-09-17 アイメック 基板処理方法およびそれを用いた半導体装置の製造方法
US20190103282A1 (en) * 2017-09-29 2019-04-04 Versum Materials Us, Llc Etching Solution for Simultaneously Removing Silicon and Silicon-Germanium Alloy From a Silicon-Germanium/Silicon Stack During Manufacture of a Semiconductor Device
JPWO2021005980A1 (https=) * 2019-07-05 2021-01-14

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