JPWO2023112453A1 - - Google Patents
Info
- Publication number
- JPWO2023112453A1 JPWO2023112453A1 JP2023567562A JP2023567562A JPWO2023112453A1 JP WO2023112453 A1 JPWO2023112453 A1 JP WO2023112453A1 JP 2023567562 A JP2023567562 A JP 2023567562A JP 2023567562 A JP2023567562 A JP 2023567562A JP WO2023112453 A1 JPWO2023112453 A1 JP WO2023112453A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
- H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/20—Recycling
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Emergency Medicine (AREA)
- Health & Medical Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Removal Of Specific Substances (AREA)
- General Chemical & Material Sciences (AREA)
- Weting (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021205279 | 2021-12-17 | ||
| PCT/JP2022/038107 WO2023112453A1 (ja) | 2021-12-17 | 2022-10-12 | ランタン化合物の除去方法及びランタン化合物除去用処理液 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023112453A1 true JPWO2023112453A1 (https=) | 2023-06-22 |
| JPWO2023112453A5 JPWO2023112453A5 (https=) | 2024-08-28 |
Family
ID=86774382
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023567562A Pending JPWO2023112453A1 (https=) | 2021-12-17 | 2022-10-12 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPWO2023112453A1 (https=) |
| KR (1) | KR20240121749A (https=) |
| TW (1) | TWI904389B (https=) |
| WO (1) | WO2023112453A1 (https=) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4189651B2 (ja) * | 2003-03-26 | 2008-12-03 | 三菱瓦斯化学株式会社 | 高誘電率薄膜エッチング剤組成物 |
| JP5592083B2 (ja) * | 2009-06-12 | 2014-09-17 | アイメック | 基板処理方法およびそれを用いた半導体装置の製造方法 |
| US20190103282A1 (en) * | 2017-09-29 | 2019-04-04 | Versum Materials Us, Llc | Etching Solution for Simultaneously Removing Silicon and Silicon-Germanium Alloy From a Silicon-Germanium/Silicon Stack During Manufacture of a Semiconductor Device |
| JPWO2021005980A1 (https=) * | 2019-07-05 | 2021-01-14 |
-
2022
- 2022-10-12 JP JP2023567562A patent/JPWO2023112453A1/ja active Pending
- 2022-10-12 KR KR1020247019613A patent/KR20240121749A/ko active Pending
- 2022-10-12 WO PCT/JP2022/038107 patent/WO2023112453A1/ja not_active Ceased
- 2022-10-25 TW TW111140398A patent/TWI904389B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| KR20240121749A (ko) | 2024-08-09 |
| TW202334376A (zh) | 2023-09-01 |
| WO2023112453A1 (ja) | 2023-06-22 |
| TWI904389B (zh) | 2025-11-11 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240226 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20250807 |