TWI904389B - 去除鑭化合物之方法及去除鑭化合物用之處理液 - Google Patents

去除鑭化合物之方法及去除鑭化合物用之處理液

Info

Publication number
TWI904389B
TWI904389B TW111140398A TW111140398A TWI904389B TW I904389 B TWI904389 B TW I904389B TW 111140398 A TW111140398 A TW 111140398A TW 111140398 A TW111140398 A TW 111140398A TW I904389 B TWI904389 B TW I904389B
Authority
TW
Taiwan
Prior art keywords
lanthanum
compounds
treatment solution
lanthanum compounds
hydroxycarboxylic acid
Prior art date
Application number
TW111140398A
Other languages
English (en)
Chinese (zh)
Other versions
TW202334376A (zh
Inventor
Kazuma Matsui
Original Assignee
日商力森諾科股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商力森諾科股份有限公司 filed Critical 日商力森諾科股份有限公司
Publication of TW202334376A publication Critical patent/TW202334376A/zh
Application granted granted Critical
Publication of TWI904389B publication Critical patent/TWI904389B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P10/00—Technologies related to metal processing
    • Y02P10/20—Recycling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Emergency Medicine (AREA)
  • Health & Medical Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Removal Of Specific Substances (AREA)
  • General Chemical & Material Sciences (AREA)
  • Weting (AREA)
TW111140398A 2021-12-17 2022-10-25 去除鑭化合物之方法及去除鑭化合物用之處理液 TWI904389B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-205279 2021-12-17
JP2021205279 2021-12-17

Publications (2)

Publication Number Publication Date
TW202334376A TW202334376A (zh) 2023-09-01
TWI904389B true TWI904389B (zh) 2025-11-11

Family

ID=86774382

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111140398A TWI904389B (zh) 2021-12-17 2022-10-25 去除鑭化合物之方法及去除鑭化合物用之處理液

Country Status (4)

Country Link
JP (1) JPWO2023112453A1 (https=)
KR (1) KR20240121749A (https=)
TW (1) TWI904389B (https=)
WO (1) WO2023112453A1 (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004296593A (ja) * 2003-03-26 2004-10-21 Mitsubishi Gas Chem Co Inc 高誘電率薄膜エッチング剤組成物
TW202102721A (zh) * 2019-07-05 2021-01-16 日商富士軟片股份有限公司 組成物、套組、基板的處理方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5592083B2 (ja) * 2009-06-12 2014-09-17 アイメック 基板処理方法およびそれを用いた半導体装置の製造方法
US20190103282A1 (en) * 2017-09-29 2019-04-04 Versum Materials Us, Llc Etching Solution for Simultaneously Removing Silicon and Silicon-Germanium Alloy From a Silicon-Germanium/Silicon Stack During Manufacture of a Semiconductor Device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004296593A (ja) * 2003-03-26 2004-10-21 Mitsubishi Gas Chem Co Inc 高誘電率薄膜エッチング剤組成物
TW202102721A (zh) * 2019-07-05 2021-01-16 日商富士軟片股份有限公司 組成物、套組、基板的處理方法

Also Published As

Publication number Publication date
KR20240121749A (ko) 2024-08-09
JPWO2023112453A1 (https=) 2023-06-22
TW202334376A (zh) 2023-09-01
WO2023112453A1 (ja) 2023-06-22

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