JPWO2023100807A5 - - Google Patents

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Publication number
JPWO2023100807A5
JPWO2023100807A5 JP2023564962A JP2023564962A JPWO2023100807A5 JP WO2023100807 A5 JPWO2023100807 A5 JP WO2023100807A5 JP 2023564962 A JP2023564962 A JP 2023564962A JP 2023564962 A JP2023564962 A JP 2023564962A JP WO2023100807 A5 JPWO2023100807 A5 JP WO2023100807A5
Authority
JP
Japan
Prior art keywords
electrode plate
insulating layer
electrode
thickness direction
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023564962A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2023100807A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2022/043765 external-priority patent/WO2023100807A1/ja
Publication of JPWO2023100807A1 publication Critical patent/JPWO2023100807A1/ja
Publication of JPWO2023100807A5 publication Critical patent/JPWO2023100807A5/ja
Pending legal-status Critical Current

Links

JP2023564962A 2021-12-01 2022-11-28 Pending JPWO2023100807A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021195483 2021-12-01
PCT/JP2022/043765 WO2023100807A1 (ja) 2021-12-01 2022-11-28 絶縁チップおよび信号伝達装置

Publications (2)

Publication Number Publication Date
JPWO2023100807A1 JPWO2023100807A1 (https=) 2023-06-08
JPWO2023100807A5 true JPWO2023100807A5 (https=) 2024-08-16

Family

ID=86612197

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023564962A Pending JPWO2023100807A1 (https=) 2021-12-01 2022-11-28

Country Status (5)

Country Link
US (1) US20240332345A1 (https=)
JP (1) JPWO2023100807A1 (https=)
CN (1) CN118355497A (https=)
DE (1) DE112022005449T5 (https=)
WO (1) WO2023100807A1 (https=)

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03293775A (ja) * 1989-12-25 1991-12-25 Toshiba Corp 強誘電体コンデンサ及び半導体装置
JPH07161932A (ja) * 1993-12-03 1995-06-23 Kawasaki Steel Corp 半導体装置
JP3677674B2 (ja) * 2000-03-14 2005-08-03 松下電器産業株式会社 半導体装置
JP3596813B2 (ja) * 2002-08-09 2004-12-02 沖電気工業株式会社 半導体装置
JP2005093531A (ja) * 2003-09-12 2005-04-07 Oki Electric Ind Co Ltd 半導体素子の構造とその製造方法
US8169014B2 (en) * 2006-01-09 2012-05-01 Taiwan Semiconductor Manufacturing Co., Ltd. Interdigitated capacitive structure for an integrated circuit
US9299655B2 (en) * 2010-11-18 2016-03-29 The Silanna Group Pty Ltd Single-chip integrated circuit with capacitive isolation and method for making the same
US8659149B2 (en) * 2011-08-09 2014-02-25 National Semiconductor Corporation Semiconductor structure with galvanic isolation
US8921988B2 (en) * 2012-12-28 2014-12-30 NeoEnergy Microelectronics, Inc. Galvanically-isolated device and method for fabricating the same
US9380705B2 (en) * 2013-03-14 2016-06-28 Analog Devices, Inc. Laterally coupled isolator devices
JP6591637B2 (ja) 2013-11-13 2019-10-16 ローム株式会社 半導体装置および半導体モジュール
JP6555084B2 (ja) * 2015-11-02 2019-08-07 富士通株式会社 容量素子及び容量素子の製造方法
US20200168534A1 (en) * 2018-11-28 2020-05-28 Texas Instruments Incorporated Multi-chip module including standalone capacitors

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