JPWO2023095669A5 - - Google Patents

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JPWO2023095669A5
JPWO2023095669A5 JP2023563631A JP2023563631A JPWO2023095669A5 JP WO2023095669 A5 JPWO2023095669 A5 JP WO2023095669A5 JP 2023563631 A JP2023563631 A JP 2023563631A JP 2023563631 A JP2023563631 A JP 2023563631A JP WO2023095669 A5 JPWO2023095669 A5 JP WO2023095669A5
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Japan
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grinding
unit
substrate
grinds
grinding unit
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JP2023563631A
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Japanese (ja)
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JPWO2023095669A1 (https=
JP7690056B2 (ja
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Priority claimed from PCT/JP2022/042339 external-priority patent/WO2023095669A1/ja
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JP2023563631A 2021-11-29 2022-11-15 基板処理方法及び基板処理システム Active JP7690056B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021193343 2021-11-29
JP2021193343 2021-11-29
PCT/JP2022/042339 WO2023095669A1 (ja) 2021-11-29 2022-11-15 基板処理方法及び基板処理システム

Publications (3)

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JPWO2023095669A1 JPWO2023095669A1 (https=) 2023-06-01
JPWO2023095669A5 true JPWO2023095669A5 (https=) 2024-08-01
JP7690056B2 JP7690056B2 (ja) 2025-06-09

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JP2023563631A Active JP7690056B2 (ja) 2021-11-29 2022-11-15 基板処理方法及び基板処理システム

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US (1) US20240331998A1 (https=)
JP (1) JP7690056B2 (https=)
KR (1) KR20240110049A (https=)
CN (1) CN118251752A (https=)
TW (1) TW202331828A (https=)
WO (1) WO2023095669A1 (https=)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3664593B2 (ja) * 1998-11-06 2005-06-29 信越半導体株式会社 半導体ウエーハおよびその製造方法
JP4154067B2 (ja) * 1999-04-06 2008-09-24 株式会社ディスコ 研削装置
WO2001022484A1 (fr) 1999-09-20 2001-03-29 Shin-Etsu Handotai Co., Ltd. Procede de fabrication d'une tranche de semi-conducteur
JP4103808B2 (ja) 2004-01-22 2008-06-18 信越半導体株式会社 ウエーハの研削方法及びウエーハ
JP2008047697A (ja) 2006-08-16 2008-02-28 Disco Abrasive Syst Ltd ウエーハの研削方法
CN110809816A (zh) 2017-07-12 2020-02-18 东京毅力科创株式会社 磨削装置、磨削方法以及计算机存储介质
CN118737893A (zh) 2018-08-23 2024-10-01 东京毅力科创株式会社 基板处理方法
JP7254425B2 (ja) 2019-06-18 2023-04-10 株式会社ディスコ 半導体ウェーハの製造方法
CN112008595A (zh) * 2020-09-02 2020-12-01 珠海市中芯集成电路有限公司 一种晶圆研磨装置及研磨方法

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