JP7690056B2 - 基板処理方法及び基板処理システム - Google Patents

基板処理方法及び基板処理システム Download PDF

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Publication number
JP7690056B2
JP7690056B2 JP2023563631A JP2023563631A JP7690056B2 JP 7690056 B2 JP7690056 B2 JP 7690056B2 JP 2023563631 A JP2023563631 A JP 2023563631A JP 2023563631 A JP2023563631 A JP 2023563631A JP 7690056 B2 JP7690056 B2 JP 7690056B2
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Japan
Prior art keywords
grinding
unit
substrate
wafer
mark
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JP2023563631A
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English (en)
Japanese (ja)
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JPWO2023095669A1 (https=
JPWO2023095669A5 (https=
Inventor
晋 早川
和哉 池上
知広 金子
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of JPWO2023095669A5 publication Critical patent/JPWO2023095669A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/123—Preparing bulk and homogeneous wafers by grinding or lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/005—Feeding or manipulating devices specially adapted to grinding machines
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B51/00—Arrangements for automatic control of a series of individual steps in grinding a workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0412—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3218—Conveying cassettes, containers or carriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
JP2023563631A 2021-11-29 2022-11-15 基板処理方法及び基板処理システム Active JP7690056B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021193343 2021-11-29
JP2021193343 2021-11-29
PCT/JP2022/042339 WO2023095669A1 (ja) 2021-11-29 2022-11-15 基板処理方法及び基板処理システム

Publications (3)

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JPWO2023095669A1 JPWO2023095669A1 (https=) 2023-06-01
JPWO2023095669A5 JPWO2023095669A5 (https=) 2024-08-01
JP7690056B2 true JP7690056B2 (ja) 2025-06-09

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JP2023563631A Active JP7690056B2 (ja) 2021-11-29 2022-11-15 基板処理方法及び基板処理システム

Country Status (6)

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US (1) US20240331998A1 (https=)
JP (1) JP7690056B2 (https=)
KR (1) KR20240110049A (https=)
CN (1) CN118251752A (https=)
TW (1) TW202331828A (https=)
WO (1) WO2023095669A1 (https=)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000150431A (ja) 1998-11-06 2000-05-30 Shin Etsu Handotai Co Ltd 半導体ウエーハおよびその製造方法
JP2000288881A (ja) 1999-04-06 2000-10-17 Disco Abrasive Syst Ltd 研削装置及び研削方法
WO2001022484A1 (fr) 1999-09-20 2001-03-29 Shin-Etsu Handotai Co., Ltd. Procede de fabrication d'une tranche de semi-conducteur
JP2005205543A (ja) 2004-01-22 2005-08-04 Shin Etsu Handotai Co Ltd ウエーハの研削方法及びウエーハ
JP2008047697A (ja) 2006-08-16 2008-02-28 Disco Abrasive Syst Ltd ウエーハの研削方法
WO2019013037A1 (ja) 2017-07-12 2019-01-17 東京エレクトロン株式会社 研削装置、研削方法及びコンピュータ記憶媒体
CN112008595A (zh) 2020-09-02 2020-12-01 珠海市中芯集成电路有限公司 一种晶圆研磨装置及研磨方法
JP2020205358A (ja) 2019-06-18 2020-12-24 株式会社ディスコ 半導体ウェーハの製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118737893A (zh) 2018-08-23 2024-10-01 东京毅力科创株式会社 基板处理方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000150431A (ja) 1998-11-06 2000-05-30 Shin Etsu Handotai Co Ltd 半導体ウエーハおよびその製造方法
JP2000288881A (ja) 1999-04-06 2000-10-17 Disco Abrasive Syst Ltd 研削装置及び研削方法
WO2001022484A1 (fr) 1999-09-20 2001-03-29 Shin-Etsu Handotai Co., Ltd. Procede de fabrication d'une tranche de semi-conducteur
JP2005205543A (ja) 2004-01-22 2005-08-04 Shin Etsu Handotai Co Ltd ウエーハの研削方法及びウエーハ
JP2008047697A (ja) 2006-08-16 2008-02-28 Disco Abrasive Syst Ltd ウエーハの研削方法
WO2019013037A1 (ja) 2017-07-12 2019-01-17 東京エレクトロン株式会社 研削装置、研削方法及びコンピュータ記憶媒体
JP2020205358A (ja) 2019-06-18 2020-12-24 株式会社ディスコ 半導体ウェーハの製造方法
CN112008595A (zh) 2020-09-02 2020-12-01 珠海市中芯集成电路有限公司 一种晶圆研磨装置及研磨方法

Also Published As

Publication number Publication date
KR20240110049A (ko) 2024-07-12
WO2023095669A1 (ja) 2023-06-01
TW202331828A (zh) 2023-08-01
JPWO2023095669A1 (https=) 2023-06-01
US20240331998A1 (en) 2024-10-03
CN118251752A (zh) 2024-06-25

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